BSP772-T [ETC]
?60mΩ. 5-34V 2.6A. P-DSO-8? ; ？的60mΩ 。 5-34V 2.6A 。 P- DSO - 8 ？\n
| 型号： | BSP772-T |
| 厂家： | 
ETC |
| 描述： | ?60mΩ. 5-34V 2.6A. P-DSO-8?
|
| 文件： | 总16页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSP 772 T
Smart Power High-Side-Switch
Product Summary
Features
Overvoltage protection
Operating voltage
41
V
Overload protection
Current limitation
V
V
bb(AZ)
bb(on)
5...34 V
On-state resistance
Nominal load current
60
R
m
A
Short circuit protection
Thermal shutdown with restart
ON
2.6
I
L(nom)
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection with external resistor
CMOS compatible input
Loss of GND and loss of V protection
bb
ESD - Protection
Very low standby current
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology. Fully protected by embedded
protection functions.
2000-02-21
Page 1
BSP 772 T
Block Diagram
+ V
bb
Voltage
source
VLogic
Gate
Overvoltage
protection
Current
limit
protection
OUT
Limit for
unclamped
ind. loads
Charge pump
Level shifter
Rectifier
Temperature
sensor
IN
Load
Logic
ESD
miniPROFET
GND
Load GND
Signal GND
Pin
Symbol
GND
IN
Function
Logic ground
1
2
3
4
5
6
7
8
Input, activates the power switch in case of logic high signal
Output to the load
OUT
NC
not connected
Vbb
Vbb
Vbb
Vbb
Positive power supply voltage
Positive power supply voltage
Positive power supply voltage
Positive power supply voltage
2000-02-21
Page 2
BSP 772 T
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Value
40
Unit
Supply voltage
V
V
V
bb
Supply voltage for full short circuit protection
36
bb(SC)
T = -40...+150 °C
j
Continuous input voltage
-10 ... +16
self limited
V
IN
Load current (Short - circuit current, see page 5)
Current through input pin (DC)
Operating temperature
A
I
L
mA
°C
I
5
-40 ...+150
-55 ... +150
1.5
IN
T
j
Storage temperature
T
stg
1)
Power dissipation
P
E
W
tot
1)2)
Inductive load switch-off energy dissipation
900
mJ
AS
single pulse, (see page 8)
Tj =150 °C, V = 13.5 V, I = 1.5 A
bb
L
2)
3)
V
Load dump protection V
= V + V
V
V
LoadDump
A
S
/RDGGXPS
R =2 , t =400ms, V = low or high, V =13,5V
I
d
IN
A
R = 9
L
63
Electrostatic discharge voltage (Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
kV
ESD
Input pin
1
5
all other pins
Thermal Characteristics
Thermal resistance @ min. footprint
-
-
95
70
-
K/W
R
th(JA)
2
1)
Thermal resistance @ 6 cm cooling area
83
R
th(JA)
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2
not tested, specified by design
3
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Loaddump
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND pin, e.g. with a
150 resistor in GND connection. A resistor for the protection of the input is integrated.
2000-02-21
Page 3
BSP 772 T
Unit
Electrical Characteristics
Parameter and Conditions
Symbol
Values
typ.
min.
max.
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Load Switching Capabilities and Characteristics
On-state resistance
T = 25 °C, I = 2 A, V = 9...40 V
R
m
A
ON
-
-
50
95
60
j
L
bb
T = 150 °C
120
j
1)
Nominal load current; Device on PCB
2.6
3.1
-
I
L(nom)
T = 85 °C, T 150 °C
C
j
Turn-on time
to 90% V
-
-
-
-
90
180 µs
230
t
OUT
on
R = 47
L
Turn-off time
to 10% V
110
0.7
0.7
t
OUT
off
R = 47
L
Slew rate on 10 to 30% V
,
dV/dt
1.5 V/µs
1.5
OUT
OUT
on
R = 47
L
Slew rate off 70 to 40% V
,
-dV/dt
off
R = 47
L
Operating Parameters
Operating voltage
5
-
34
V
V
V
bb(on)
Undervoltage shutdown of charge pump
T = -40...+85 °C
bb(under)
-
-
-
-
4
j
T = 150 °C
5.5
j
Undervoltage restart of charge pump
Standby current
-
4
5.5
V
bb(u cp)
µA
I
bb(off)
T = -40...+85 °C, V = 0 V
-
-
-
-
10
15
j
IN
2)
T = 150 °C , V = 0 V
j
IN
Leakage output current (included in I
)
-
-
5
I
I
bb(off)
L(off)
GND
V = 0 V
IN
Operating current
-
0.8
1.5 mA
V = 5 V
IN
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2
higher current due temperature sensor
2000-02-21
Page 4
BSP 772 T
Unit
Electrical Characteristics
Parameter and Conditions
Symbol
Values
typ.
min.
max.
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Protection Functions
Initial peak short circuit current limit (pin 5 to 3)
A
I
L(SCp)
T = -40 °C, V = 20 V, t = 150 µs
-
-
-
17
-
28
-
j
bb
m
T = 25 °C
j
T = 150 °C
9
-
j
Repetitive short circuit current limit
T = T (see timing diagrams)
I
L(SCr)
-
12
47
-
-
j
jt
Output clamp (inductive load switch off)
at V = V - V
41
V
V
ON(CL)
,
ON(CL)
OUT
bb
I
= 4 mA
bb
1)
Overvoltage protection
= 4 mA
41
-
-
V
bb(AZ)
jt
I
bb
Thermal overload trip temperature
Thermal hysteresis
150
-
-
-
-
°C
K
T
10
T
jt
Reverse Battery
2)
Reverse battery
-
-
-
32
-
V
-V
-V
bb
600
mV
Drain-source diode voltage (V
> V )
bb
OUT
ON
T = 150 °C
j
1
2
see also V
in circuit diagram on page 7
ON(CL)
Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
2000-02-21
Page 5
BSP 772 T
Unit
Electrical Characteristics
Parameter and Conditions
Symbol
Values
typ.
min.
-
max.
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Input
Input turn-on threshold voltage
(see page 12)
-
-
2.2
-
V
V
V
IN(T+)
IN(T-)
Input turn-off threshold voltage
(see page 12)
0.8
Input threshold hysteresis
Off state input current (see page 12)
-
0.3
-
-
V
IN(T)
1
25
µA
I
IN(off)
V = 0.7 V
IN
On state input current (see page 12)
3
-
25
5
I
IN(on)
V = 5 V
IN
Input resistance (see page 7)
1.5
3.5
R
k
I
2000-02-21
Page 6
BSP 772 T
Terms
Inductive and overvoltage output clamp
+ V
bb
I
bb
V
Z
V
bb
V
ON
I
I
IN
V
L
ON
IN
OUT
PROFET
OUT
GND
V
IN
GND
I
V
bb
V
GND
OUT
R
GND
V
clamped to 47V typ.
ON
Overvoltage protection of logic part
Input circuit (ESD protection)
+ V
bb
R
I
IN
V
Z2
R
I
ESD-
ZDI
IN
I
Logic
I
GND
V
Z1
GND
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DWꢀ'&ꢀFRQGLWLRQVꢀLVꢀQRWꢀUHFRPPHQGHG
R
GND
Signal GND
V
=6.1V typ., V =V
=47V typ.,
Z1
Z2 bb(AZ)
R =3.5 k typ., R
=150
I
GND
Reverse battery protection
V
-
bb
Logic
R
I
IN
OUT
Power
Inverse
Diode
GND
GND
R
R
L
Power GND
Signal GND
R
=150 , R =3.5k typ.,
I
GND
Temperature protection is not active during inverse
current
2000-02-21
Page 7
BSP 772 T
disconnect with charged inductive
V
GND disconnect
bb
load
V
V
bb
bb
high
IN
IN
OUT
OUT
PROFET
PROFET
GND
GND
V
V
V
bb
IN
GND
V
bb
GND disconnect with GND pull up
V
Inductive Load switch-off energy
dissipation
bb
IN
OUT
PROFET
E
bb
E
GND
AS
E
E
Load
V
bb
V
V
V
IN
GND
IN
bb
OUT
PROFET
L
=
L
GND
Z
L
^
E
R
R
L
2
Energy stored in load inductance: E = ½ * L * I
L
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
L
E
= E + E - E = V
* i (t) dt,
AS
bb
L
R
ON(CL) L
with an approximate solution for R > 0 :
L
I
L
* L
I
L
* R
L
E
A S
* (V bb |V O U T ( C L )| ) * ln(1
)
2 * R
L
|V O U T ( C L )|
2000-02-21
Page 8
BSP 772 T
Typ. transient thermal impedance
Typ. transient thermal impedance
=f(t ) @ min. footprint
2
Z
=f(t ) @ 6cm heatsink area
Z
thJA
p
thJA
p
Parameter: D=t /T
Parameter: D=t /T
p
p
10 2
10 2
D=0.5
D=0.5
K/W
K/W
D=0.2
D=0.2
10 1
10 1
D=0.1
D=0.1
D=0.05
D=0.05
Z
Z
D=0.02
D=0.02
10 0
10 0
D=0.01
D=0.01
D=0
10 -1
10 -1
D=0
10 -2
10 -2
10 -710 -610 -510 -410 -310 -210 -110 0 10 1 10 2
10 4
10 -710 -610 -510 -410 -310 -210 -110 0 10 1 10 2
10 4
s
s
t
t
p
p
Typ. on-state resistance
Typ. on-state resistance
R
= f(T ) ; V = 13,5V ; V = high
R
= f(V ); I = 0.5A ; V = high
ON
j
bb
in
ON
bb
L
in
100
120
m
m
150°C
80
60
40
20
0
R
R
60
40
20
0
25°C
-40°C
-40 -20
0
20 40 60 80 100 120
160
0
5
10
15
20
25
30
40
°C
V
T
V
j
bb
2000-02-21
Page 9
BSP 772 T
Typ. turn off time
Typ. turn on time
t
= f(T ); R = 47
j L
t
= f(T ); R = 47
j L
off
on
32V
180
140
9V
µs
µs
13.5V
9V
140
120
100
80
100
80
60
40
20
0
32V
t
t
60
40
20
0
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
°C
T
T
j
j
Typ. slew rate on
Typ. slew rate off
dV/dt = f(T ) ; R = 47
dV/dt = f(T ); R = 47
on
j
L
off
j
L
2.0
2.0
V/µs
V/µs
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
t
t
32V
32V
13.5V
9V
13.5V
9V
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
°C
T
T
j
j
2000-02-21
Page 10
BSP 772 T
Typ. standby current
= f(T ) ; V = 32V ; V = low
Typ. leakage current
I = f(T ) ; V = 32V ; V = low
L(off)
I
bb(off)
j
bb
IN
j
bb
IN
6
2.2
µA
µA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4
3
2
1
I
I
0
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
°C
T
T
j
j
Typ. initial short circuit shutdown time
Typ. initial peak short circuit current limit
t
= f(T
) ; V = 20V
I
= f(T ) ; V = 20V
j bb
off(SC)
j,start bb
L(SCp)
25
3.0
ms
A
2.0
t
I
15
10
5
1.5
1.0
0.5
0.0
0
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
°C
T
T
j
j
2000-02-21
Page 11
BSP 772 T
Typ. input current
= f(T ); V = 13,5V; V = low/high
Typ. input current
I
I = f(V ); V = 13.5V
IN(on/off)
j
bb
= 5V
IN
IN
IN
bb
V
0,7V; V
INlow
INhigh
200
12
µA
µA
150°C
160
140
120
100
80
8
6
4
2
0
-40...25°C
I
I
on
off
60
40
20
0
-40 -20
0
20 40 60 80 100 120
160
0
2
4
8
°C
V
T
V
j
IN
Typ. input threshold voltage
Typ. input threshold voltage
V
= f(T ) ; V = 13,5V
j bb
IN(th)
V
= f(V ) ; T = 25°C
IN(th)
bb
j
2.0
2.0
V
V
on
off
on
off
1.6
1.4
1.6
1.4
V
1.2
V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0
20 40 60 80 100 120
160
°C
5
10
15
20
25
35
V
T
j
V
bb
2000-02-21
Page 12
BSP 772 T
Maximum allowable load inductance
for a single switch off
Maximum allowable inductive switch-off
energy, single pulse
L = f(I ); T
=150°C, V =13.5V, R =0
bb L
E
= f(I ); T
= 150°C, V = 13,5V
L
jstart
AS
L
jstart bb
2000
1400
mH
mJ
1500
1000
800
600
400
200
0
1250
L
E
1000
750
500
250
0
0.0
0.5
1.0
1.5
2.0
2.5
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.5
A
A
I
I
L
L
2000-02-21
Page 13
BSP 772 T
Timing diagrams
Figure 2b: Switching a lamp,
Figure 1a: Vbb turn on:
IN
IN
OUT
V
bb
I
VOUT
L
t
t
Figure 2a: Switching a resistive load,
Figure 2c: Switching an inductive load
turn-on/off time and slew rate definition
IN
IN
V O U T
9 0 %
V
OUT
t
d V /d to ff
o n
t
d V /d to n
o ff
1 0 %
IL
I
L
t
t
2000-02-21
Page 14
BSP 772 T
Figure 5: Undervoltage restart of charge pump
Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling
IN
V o n
t
I
L
V b b ( u c p )
I
V
b b ( u n d e r )
L(SCp)
I
L(SCr)
t
V b b
m
t
t
off(SC)
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Figure 4: Overtemperature:
Reset if T < T
j
jt
IN
V
OUT
T
J
t
2000-02-21
Page 15
BSP 772 T
Package and ordering code
all dimensions in mm
Ordering code:
Q67060-S7302-A2
Printed circuit board (FR4, 1.5mm thick, one
2
layer 70µm, 6cm active heatsink area ) as
a reference for max. power dissipation P
tot
nominal load current I
and thermal
L(nom)
Published by
resistance R
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
thja
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
2000-02-21
Page 16
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