BB831 [INFINEON]
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units); 硅变容二极管（频率范围为使用2 GHz的特殊设计， TV- SAT室内机）
| 型号： | BB831 |
| 厂家： | 
Infineon |
| 描述： | Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB 831
Silicon Variable Capacitance Diode
Preliminary data
· Frequency range up to 2 GHz
special design for use in TV-sat indoor units
Type
Marking Ordering Code
white T Q62702-B592
Pin Configuration Package
BB 831
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
30
35
V
V
R
Peak reverse voltage (R ³ 5kW)
Forward current
V
RM
20
mA
°C
I
F
Operating temperature range
Storage temperature
-55 ...+125
-55 ...+150
T
T
op
stg
Semiconductor Group
1
Aug-03-1998
BB 831
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
20
DC characteristics
Reverse current
-
-
-
-
nA
I
I
R
V = 30 V
R
Reverse current
500
R
V = 30 V, T = 85 °C
R
A
AC characteristics
Diode capacitance
pF
C
T
V = 1 V, f = 1 MHz
7.8
0.85
7.8
8.8
1.02
8.6
9.8
1.2
9.5
R
V = 28 V, f = 1 MHz
R
Capacitance ratio
-
C /C
T1 T28
V = 1 V, V = 28 V, f = 1 MHz
R
R
Capacitance matching
V = 1 V, V = 28 V, f = 1 MHz
-
-
-
-
1
3
-
%
DC /C
T
T
R
R
Series resistance
r
W
s
V = 1 V, f = 100 MHz
R
Series inductance
1.8
-
nH
L
s
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
2
Aug-03-1998
BB 831
Diode capacitance C = f (V )
T
R
f = 1MHz
Semiconductor Group
3
Aug-03-1998
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