BB831E6327 [INFINEON]

Variable Capacitance Diode, 8.8pF C(T),;
BB831E6327
型号: BB831E6327
厂家: Infineon    Infineon
描述:

Variable Capacitance Diode, 8.8pF C(T),

文件: 总5页 (文件大小:817K)
中文:  中文翻译
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BB831...  
Silicon Variable Capacitance Diodes  
Frequency range up to 2 GHz  
Special design for use in TV-sat tuners  
Pb-free (RoHS compliant) package  
BB831  
1
2
Type  
BB831  
Package  
SOD323  
Configuration  
single  
L (nH) Marking  
S
1.8  
white T  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
30  
35  
V
Diode reverse voltage  
Peak reverse voltage  
( R 5k)  
V
V
R
RM  
20  
mA  
°C  
Forward current  
Operating temperature range  
Storage temperature  
I
F
T
T
-55 ... 125  
-55 ... 150  
op  
stg  
2011-06-15  
1
BB831...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
Reverse current  
I
nA  
pF  
R
V = 30 V  
-
-
-
-
20  
500  
R
V = 30 V, T = 85 °C  
R
A
AC Characteristics  
Diode capacitance  
C
T
V = 1 V, f = 1 MHz  
7.8  
0.85  
7.8  
8.8  
1.02  
8.6  
9.8  
1.2  
9.5  
R
V = 28 V, f = 1 MHz  
R
Capacitance ratio  
C /C  
T1 T28  
V = 1 V, V = 28 V, f = 1 MHz  
R
R
1)  
-
-
-
3
-
Capacitance matching  
V = 1 V, V = 28 V, f = 1 MHz  
C /C  
%
T
T
R
R
Series resistance  
V = 1 V, f = 100 MHz  
r
1
S
R
1
For details please refer to Application Note 047.  
2011-06-15  
2
BB831...  
Diode capacitance C = ƒ (V )  
Temperature coefficient of the diode  
T
R
f = 1MHz  
capacitance T = ƒ (V )  
Cc  
R
10 -3  
BB 811  
EHD07053  
12  
pF  
10  
CT  
1/°C  
8
6
4
2
0
10 -4  
10 -5  
10 0  
10 1  
10 2  
10-1  
100  
101  
V
102  
V
V
R
VR  
2011-06-15  
3
Package SOD323  
BB831...  
2011-06-15  
4
BB831...  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2011-06-15  
5

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