BB837-E7263 [INFINEON]

Variable Capacitance Diode, 6.6pF C(T), Silicon, Abrupt, ROHS COMPLIANT PACKAGE-2;
BB837-E7263
型号: BB837-E7263
厂家: Infineon    Infineon
描述:

Variable Capacitance Diode, 6.6pF C(T), Silicon, Abrupt, ROHS COMPLIANT PACKAGE-2

光电二极管 变容二极管
文件: 总7页 (文件大小:853K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BB837/BB857...  
Silicon Tuning Diode  
For SAT tuners  
High capacitance ratio  
Low series resistance  
Excellent uniformity and matching due to  
"in-line" matching assembly procedure  
Pb-free (RoHS compliant) package  
BB837  
BB857  
1
2
Type  
BB837  
BB857  
Package  
SOD323  
SCD80  
Configuration  
single  
single  
L (nH) Marking  
S
1.8  
0.6  
white M  
OO  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
30  
35  
V
Diode reverse voltage  
Peak reverse voltage  
R 5kΩ  
V
V
R
RM  
20  
mA  
°C  
Forward current  
Operating temperature range  
Storage temperature  
I
F
T
T
-55 ... 150  
-55 ... 150  
op  
stg  
2011-06-15  
1
BB837/BB857...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
Reverse current  
I
nA  
R
V = 30 V  
-
-
-
-
10  
200  
R
V = 30 V, T = 85 °C  
R
A
AC Characteristics  
pF  
-
Diode capacitance  
C
T
V = 1 V, f = 1 MHz  
6
0.5  
0.45  
6.6  
0.55  
0.52  
7.2  
0.65  
-
R
V = 25 V, f = 1 MHz  
R
V = 28 V, f = 1 MHz  
R
10.2  
12  
12.7  
-
-
Capacitance ratio  
C /C  
T1 T25  
V = 1 V, V = 25 V, f = 1 MHz  
R
R
9.7  
-
Capacitance ratio  
V = 1 V, V = 28 V, f = 1 MHz  
C /C  
T1 T28  
R
R
1)  
-
-
-
5
-
Capacitance matching  
C /C  
%
T
T
V = 1V ... 28V, f = 1 MHz, 7 diodes sequence  
R
Series resistance  
r
1.5  
0.6  
S
V = 5 V, f = 470 MHz  
R
Series inductance  
L
-
nH  
S
1
For details please refer to Application Note 047  
2011-06-15  
2
BB837/BB857...  
Diode capacitance C = ƒ (V )  
Normalized diode capacitance  
T
R
f = 1MHz  
C
/C  
= ƒ(T ); f = 1MHz  
(TA) (25°C)  
A
10  
pF  
1.035  
-
1V  
2V  
1.025  
1.02  
1.015  
1.01  
1.005  
1
8
7
6
5
4
3
2
1
25V  
28V  
0.995  
0.99  
0.985  
0.98  
0.975  
0
10 0  
10 1  
10 2  
-30  
-10  
10  
30  
50  
70  
100  
V
°C  
V
T
A
R
Reverse current I = ƒ (T )  
Reverse current I = ƒ(V )  
R R  
R
A
V = 28V  
T = Parameter  
R
A
10 3  
pA  
10 3  
pA  
80°C  
60°C  
10 2  
10 1  
10 0  
10 2  
28°C  
10 1  
10 0  
-30  
10 -1  
10 0  
10 1  
10 2  
°C  
V
-10  
10  
30  
50  
70  
100  
T
V
R
A
2011-06-15  
3
Package SCD80  
BB837/BB857...  
Package Outline  
M
±02  
A
±±0.  
±0.3+±0±ꢀ  
±08  
-±0±3  
A
2
.
±03  
Cathode  
marking  
±±0±ꢀ  
±±0.  
±07  
Foot Print  
±03ꢀ  
Marking Layout (Example)  
2±±ꢀ, June  
Date code  
BAR63-±2W  
Type code  
Cathode marking  
Laser marking  
Standard Packing  
Reel ø.8± mm = 30±±± Pieces/Reel  
Reel ø.8± mm = 80±±± Pieces/Reel (2 mm Pitch)  
Reel ø33± mm = .±0±±± Pieces/Reel  
Standard  
4
Reel with 2 mm Pitch  
2
±02  
±07  
Cathode  
marking  
±04  
±09  
Cathode  
marking  
2011-06-15  
4
BB837/BB857...  
Date Code marking for discrete packages with  
one digit (SCD80, SC79, SC751)) CES-Code  
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014  
01  
02  
03  
04  
05  
06  
07  
08  
09  
10  
11  
12  
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
s
t
s
t
s
t
u
v
x
y
z
2
3
u
v
x
y
z
2
3
u
v
x
y
z
2
3
g
h
j
g
h
j
g
h
j
k
l
K
L
k
l
K
L
k
l
K
L
n
N
5
n
N
5
n
N
5
1) New Marking Layout for SC75, implemented at October 2005.  
.
2011-06-15  
5
Package SOD323  
BB837/BB857...  
2011-06-15  
6
BB837/BB857...  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2011-06-15  
7

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