BB833_07 [INFINEON]
Silicon Tuning Diodes; 硅调谐二极管
| 型号： | BB833_07 |
| 厂家： | 
Infineon |
| 描述： | Silicon Tuning Diodes |
| 文件： | 总5页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB833...
Silicon Tuning Diodes
• Extended frequency range up to 2.5 GHz;
spezial design for use in TV-sat tuners
• High capacitance ratio
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BB833
1
2
Type
Package
Configuration
L (nH) Marking
S
BB833
SOD323
single
1.8
white X
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
Unit
30
35
V
Diode reverse voltage
Peak reverse voltage-
R ≥ 5kΩ
V
V
R
RM
20
mA
°C
Forward current
I
F
Operating temperature range
Storage temperature
T
-55 ... 150
-55 ... 150
op
T
stg
1Pb-containing package may be available upon special request
2007-04-20
1
BB833...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Reverse current
I
-
-
-
-
nA
pF
R
V = 30 V
20
R
V = 30 V, T = 85 °C
500
R
A
AC Characteristics
Diode capacitance
C
T
V = 1 V, f = 1 MHz
8.5
0.6
11
9.3
0.75
12.4
10
0.9
-
R
V = 28 V, f = 1 MHz
R
Capacitance ratio
C /C
T1 T28
V = 1 V, V = 28 V, f = 1 MHz
R
R
1)
-
-
-
3
-
%
Capacitance matching
V = 1 V, V = 28 V, f = 1 MHz
∆C /C
T T
R
R
Series resistance
r
1.8
Ω
S
V = 1 V, f = 470 MHz
R
1For details please refer to Application Note 047.
2007-04-20
2
BB833...
Diode capacitance C = ƒ (V )
Temperature coefficient of the diode
capacitance T = ƒ (V )
T
R
f = 1MHz
Cc
R
10 -3
BB 833
EHD07121
12
pF
10
C T
1/°C
8
6
4
2
0
10 -4
10 -5
10 -1
10 0
10 1
10 2
10 0
10 1
V
10 2
V
V
R
VR
2007-04-20
3
Package SOD323
BB833...
Package Outline
+0.2
-0.1
0.9
+0.2
-0.1
1.25
±0.05
0
A
2
Cathode
marking
1
+0.1
-0.05
+0.05
0.3
-0.2
0.3
+0.1
-0.06
0.15
M
0.25
A
Foot Print
0.6
Marking Layout (Example)
BAR63-03W
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
1
0.65
1.35
Cathode
marking
2007-04-20
4
BB833...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-20
5
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