BB833 [INFINEON]
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units); 硅调谐二极管（推广的频率范围高达2.5 GHz的;在TV- SAT室内机使用特殊设计）
| 型号： | BB833 |
| 厂家： | 
Infineon |
| 描述： | Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Tuning Diode
BB 833
Features
● Extented frequency range up to 2.5 GHz;
special design for use in TV-SAT indoor units
● High capacitance ratio
Type
Ordering Code
(tape and reel)
Pin Configuration Marking
2
Package
SOD-323
1
BB 833
Q62702-B628
C
A
white X
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
30
35
20
V
Reverse voltage (R ≥ 5 kΩ)
Forward current
V
RM
IF
mA
Operating temperature range
Storage temperature range
T
op
– 55 … + 150 ˚C
– 55 … + 150
Tstg
Thermal Resistance
Junction - ambient
R
th JA
≤ 450
K/W
Semiconductor Group
1
04.96
BB 833
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse current
IR
nA
V
R
= 30 V
= 30 V, T
–
–
–
–
20
500
V
R
A
= 85 ˚C
Diode capacitance
CT
pF
f = 1 MHz,V
R
= 1 V
= 28 V
8.5
0.6
9.3
0.75
10
0.9
V
R
Capacitance ratio
f = 1 MHz, V = 1 V, 28 V
C
T1
11
12.4
–
–
3
–
–
–
R
CT28
Capacitance matching
f = 1 MHz, V = 1 V … 28 V
∆C
C
T
–
%
Ω
R
T
Series resistance
= 9 pF, f = 470 MHz
rs
–
1.8
–
CT
Series inductance
Ls
–
nH
Diode capacitance C
f = 1 MHz
T
= f (V )
R
Semiconductor Group
2
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