AUIRLS3036-7TRL [INFINEON]

HEXFETPower MOSFET; ?? HEXFET功率MOSFET
AUIRLS3036-7TRL
型号: AUIRLS3036-7TRL
厂家: Infineon    Infineon
描述:

HEXFETPower MOSFET
?? HEXFET功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总12页 (文件大小:250K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD - 97719A  
AUTOMOTIVE GRADE  
AUIRLS3036-7P  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
VDSS  
RDS(on) typ.  
60V  
1.5m  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
1.9m  
300A  
G
240A  
S
Description  
SpecificallydesignedforAutomotiveapplications,thisHEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieveextremelylowon-resistancepersiliconarea. Additional  
features of this design are a 175°C junction operating  
temperature, fast switching speed and improved repetitive  
avalanche rating . These features combine to make this design  
an extremely efficient and reliable device for use in Automotive  
D
S
S
S
S
S
applications and a wide variety of other applications.  
G
D2Pak 7 Pin  
AUIRLS3036-7P  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Max.  
300  
210  
240  
1000  
380  
2.5  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
A
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
± 16  
300  
Gate-to-Source Voltage  
mJ  
A
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy  
EAR  
mJ  
8.1  
-55 to + 175  
300  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.40  
40  
Units  
°C/W  
R  
Junction-to-Case  
JC  
RJA  
–––  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/29/11  
AUIRLS3036-7P  
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol  
V(BR)DSS  
Parameter  
Drain-to-Source Breakdown Voltage  
Min. Typ. Max. Units  
60 ––– –––  
––– 0.059 ––– V/°C Reference to 25°C, ID = 5mA  
Conditions  
VGS = 0V, ID = 250μA  
V
V
/ T  
(BR)DSS   
Breakdown Voltage Temp. Coefficient  
J
–––  
–––  
1.0  
1.5  
1.7  
–––  
1.9  
2.2  
2.5  
VGS = 10V, ID = 180A  
RDS(on)  
Static Drain-to-Source On-Resistance  
m  
V
GS = 4.5V, ID = 150A  
VGS(th)  
Gate Threshold Voltage  
V
S
VDS = VGS, ID = 250μA  
gfs  
Forward Transconductance  
390 ––– –––  
VDS = 10V, ID = 180A  
RG(int)  
IDSS  
Internal Gate Resistance  
Drain-to-Source Leakage Current  
–––  
1.9  
–––  
20  
––– –––  
VDS = 60V, VGS = 0V  
μA  
––– ––– 250  
––– ––– 100  
––– ––– -100  
VDS = 60V, VGS = 0V, TJ = 125°C  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
VGS = 16V  
nA  
VGS = -16V  
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol  
Parameter  
Min. Typ. Max. Units  
––– 110 160  
Conditions  
Qg  
Total Gate Charge  
ID = 180A  
VDS = 30V  
VGS = 4.5V  
Qgs  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Total Gate Charge Sync. (Qg - Qgd)  
Turn-On Delay Time  
Rise Time  
–––  
–––  
–––  
–––  
33  
53  
57  
81  
–––  
–––  
–––  
–––  
nC  
ns  
Qgd  
Qsync  
ID = 180A, VDS =0V, VGS = 4.5V  
VDD = 39V  
td(on)  
tr  
––– 540 –––  
––– 89 –––  
ID = 180A  
td(off)  
Turn-Off Delay Time  
Fall Time  
R = 2.1  
G
VGS = 4.5V  
tf  
––– 170 –––  
––– 11270 –––  
––– 1025 –––  
––– 520 –––  
––– 1460 –––  
––– 1630 –––  
Ciss  
Input Capacitance  
VGS = 0V  
Coss  
Output Capacitance  
Reverse Transfer Capacitance  
VDS = 50V  
Crss  
ƒ = 1.0MHz  
pF  
Coss eff. (ER)  
Coss eff. (TR)  
VGS = 0V, VDS = 0V to 48V  
VGS = 0V, VDS = 0V to 48V  
Effective Output Capacitance (Energy Related)  
Effective Output Capacitance (Time Related)  
Diode Characteristics  
Symbol  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
S
IS  
Continuous Source Current  
––– –––  
MOSFET symbol  
300  
(Body Diode)  
Pulsed Source Current  
(Body Diode)  
showing the  
integral reverse  
A
––– –––  
G
ISM  
1000  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
––– –––  
1.3  
–––  
–––  
V
TJ = 25°C, IS = 180A, VGS = 0V  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
VR = 51V,  
IF = 180A  
di/dt = 100A/μs  
–––  
–––  
57  
60  
ns  
Qrr  
Reverse Recovery Charge  
––– 140 –––  
––– 160 –––  
nC  
A
IRRM  
ton  
Reverse Recovery Current  
Forward Turn-On Time  
–––  
4.6  
–––  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
Pulse width 400μs; duty cycle 2%.  
† Coss eff. (TR) is a fixed capacitance that gives the same charging time as  
 Calcuted continuous current based on maximum allowable junction  
temperature Bond wire current limit is 195A. Note that current  
limitation arising from heating of the device leds may occur with  
some lead mounting arrangements.  
‚ Repetitive rating; pulse width limited by max. junction  
temperature.  
Coss while VDS is rising from 0 to 80% VDSS  
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as  
Coss while VDS is rising from 0 to 80% VDSS  
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For  
recommended footprint and soldering techniquea refer to applocation  
note # AN- 994 echniques refer to application note #AN-994.  
‰ Ris measured at TJ approximately 90°C.  
.
.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.018mH  
RG = 25, IAS = 180A, VGS =10V. Part not recommended for use  
above this value .  
Š RJC value shown is at time zero.  
„ ISD 180A, di/dt 1070A/μs, VDD V(BR)DSS, TJ 175°C.  
2
www.irf.com  
AUIRLS3036-7P  
Qualification Information†  
Automotive  
††  
(per AEC-Q101)  
Qualification Level  
Comments: This part number(s) passed Automotive  
qualification. IR’s Industrial and Consumer qualification level  
is granted by extension of the higher Automotive level.  
D2Pak 7 Pin  
MSL1  
Moisture Sensitivity Level  
Class M4 (+/- 800V)†††  
Machine Model  
AEC-Q101-002  
Class H3A (+/- 6000V)†††  
AEC-Q101-001  
Human Body Model  
ESD  
Class C5 (+/- 2000V)†††  
AEC-Q101-005  
Charged Device Model  
Yes  
RoHS Compliant  
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/  
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.  
††† Highest passing voltage.  
www.irf.com  
3
AUIRLS3036-7P  
1000  
1000  
100  
10  
VGS  
15V  
VGS  
15V  
10V  
TOP  
TOP  
10V  
4.5V  
4.0V  
3.5V  
3.3V  
3.0V  
2.7V  
4.5V  
4.0V  
3.5V  
3.3V  
3.0V  
2.7V  
100  
10  
1
BOTTOM  
BOTTOM  
2.7V  
2.7V  
60μs PULSE WIDTH  
60μs PULSE WIDTH  
Tj = 175°C  
Tj = 25°C  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.5  
2.0  
1.5  
1.0  
0.5  
1000  
100  
10  
I
= 180A  
= 10V  
D
V
GS  
T
= 175°C  
J
T
= 25°C  
J
V
= 25V  
DS  
60μs PULSE WIDTH  
1
2.0  
3.0  
4.0  
5.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
V
, Gate-to-Source Voltage (V)  
GS  
T
, Junction Temperature (°C)  
J
Fig 4. Normalized On-Resistance vs. Temperature  
Fig 3. Typical Transfer Characteristics  
5
20000  
15000  
10000  
5000  
0
V
C
= 0V,  
f = 100 kHz  
GS  
V
V
= 48V  
= 30V  
I = 180A  
D
DS  
DS  
= C + C , C SHORTED  
iss  
gs  
gd ds  
C
C
= C  
rss  
oss  
gd  
4
3
2
1
0
= C + C  
ds  
gd  
Ciss  
Coss  
Crss  
0
20  
Q
40  
60  
80  
100 120 140  
1
10  
100  
Total Gate Charge (nC)  
G
V
, Drain-to-Source Voltage (V)  
DS  
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage  
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage  
4
www.irf.com  
AUIRLS3036-7P  
1000  
100  
10  
10000  
1000  
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R (on)  
DS  
T
= 175°C  
J
100μsec  
T
= 25°C  
J
1msec  
LIMITED BY PACKAGE  
10msec  
DC  
1
1
Tc = 25°C  
Tj = 175°C  
Single Pulse  
V
= 0V  
1.4  
GS  
0.1  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.6  
0.1  
1
10  
100  
V
, Drain-toSource Voltage (V)  
V
, Source-to-Drain Voltage (V)  
DS  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
300  
250  
200  
150  
100  
50  
80  
70  
60  
50  
LIMITED BY PACKAGE  
I
= 5mA  
D
0
25  
50  
75  
100  
125  
150  
175  
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
T
, Case Temperature (°C)  
C
T
, Junction Temperature (°C)  
J
Fig 9. Maximum Drain Current vs.  
Fig 10. Drain-to-Source Breakdown Voltage  
Case Temperature  
1200  
4.0  
3.0  
2.0  
1.0  
0.0  
I
D
TOP  
22A  
1000  
800  
600  
400  
200  
0
37A  
180A  
BOTTOM  
0
10  
20  
30  
40  
50  
60  
70  
25  
50  
75  
100  
125  
150  
175  
V
Drain-to-Source Voltage (V)  
Starting T , Junction Temperature (°C)  
J
DS,  
Fig 11. Typical COSS Stored Energy  
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent  
www.irf.com  
5
AUIRLS3036-7P  
1
D = 0.50  
0.1  
0.01  
0.20  
0.10  
R1  
R1  
R2  
R2  
R3  
R3  
  
(sec)  
0.05  
0.02  
0.01  
Ri (°C/W)  
J J  
C  
0.103731 0.000184  
0.196542 0.001587  
0.098271 0.006721  
1 1  
2 2  
3 3  
Ci= iRi  
Ci= iRi  
SINGLE PULSE  
0.001  
( THERMAL RESPONSE )  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
0.0001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
1000  
100  
10  
Duty Cycle = Single Pulse  
Allowed avalanche Current vs avalanche  
pulsewidth, tav, assuming Tj = 150°C and  
Tstart =25°C (Single Pulse)  
0.01  
0.05  
0.10  
Allowed avalanche Current vs avalanche  
pulsewidth, tav, assuming  j = 25°C and  
Tstart = 150°C.  
1
1.0E-06  
1.0E-05  
1.0E-04  
1.0E-03  
1.0E-02  
1.0E-01  
tav (sec)  
Fig 14. Typical Avalanche Current vs.Pulsewidth  
300  
250  
200  
150  
100  
50  
Notes on Repetitive Avalanche Curves , Figures 14, 15:  
(For further info, see AN-1005 at www.irf.com)  
1. Avalanche failures assumption:  
Purely a thermal phenomenon and failure occurs at a temperature far in  
excess of Tjmax. This is validated for every part type.  
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.  
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.  
4. PD (ave) = Average power dissipation per single avalanche pulse.  
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase  
during avalanche).  
6. Iav = Allowable avalanche current.  
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as  
25°C in Figure 14, 15).  
tav = Average time in avalanche.  
D = Duty cycle in avalanche = tav ·f  
TOP  
BOTTOM 1% Duty Cycle  
= 180A  
Single Pulse  
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)  
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC  
25  
50  
75  
100  
125  
150  
175  
Iav = 2DT/ [1.3·BV·Zth]  
EAS (AR) = PD (ave)·tav  
Starting T , Junction Temperature (°C)  
J
Fig 15. Maximum Avalanche Energy vs. Temperature  
6
www.irf.com  
AUIRLS3036-7P  
3.0  
2.5  
2.0  
1.5  
1.0  
24  
18  
12  
6
I
I
I
= 1.0A  
D
D
D
= 1.0mA  
= 250μA  
I
= 120A  
F
V
= 51V  
R
T
= 125°C  
= 25°C  
J
J
T
0
-75 -50 -25  
0
J
25 50 75 100 125 150 175  
, Temperature ( °C )  
100 200 300 400 500 600 700 800 900  
T
di / dt - (A / μs)  
f
Fig. 17 - Typical Recovery Current vs. dif/dt  
Fig 16. Threshold Voltage Vs. Temperature  
1000  
24  
800  
600  
400  
200  
0
18  
12  
I
= 120A  
= 51V  
I
= 180A  
= 51V  
F
F
6
0
V
T
V
R
R
= 125°C  
= 25°C  
T
= 125°C  
= 25°C  
J
J
T
T
J
J
100 200 300 400 500 600 700 800 900  
100 200 300 400 500 600 700 800 900  
di / dt - (A / μs)  
di / dt - (A / μs)  
f
f
Fig. 18 - Typical Recovery Current vs. dif/dt  
Fig. 19 - Typical Stored Charge vs. dif/dt  
1000  
I
= 180A  
F
V
= 51V  
R
T
= 125°C  
= 25°C  
800  
600  
400  
200  
0
J
T
J
100 200 300 400 500 600 700 800 900  
di / dt - (A / μs)  
f
Fig. 20 - Typical Stored Charge vs. dif/dt  
www.irf.com  
7
AUIRLS3036-7P  
Driver Gate Drive  
P.W.  
P.W.  
Period  
D.U.T  
Period  
D =  
+
*
=10V  
V
GS  
ƒ
Circuit Layout Considerations  
 Low Stray Inductance  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
-
D.U.T. I Waveform  
SD  
+
‚
-
Reverse  
Recovery  
Current  
Body Diode Forward  
„
Current  
di/dt  
-
+
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  

V
DD  
VDD  
Re-Applied  
Voltage  
dv/dt controlled by RG  
RG  
+
-
Body Diode  
Forward Drop  
Driver same type as D.U.T.  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
Inductor Current  
I
SD  
Ripple 5%  
* VGS = 5V for Logic Level Devices  
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel  
HEXFET® Power MOSFETs  
V
(BR)DSS  
15V  
t
p
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
V
2
GS  
0.01  
t
p
I
AS  
Fig 22b. Unclamped Inductive Waveforms  
Fig 22a. Unclamped Inductive Test Circuit  
RD  
VDS  
V
DS  
90%  
VGS  
D.U.T.  
RG  
+
VDD  
-
VGS  
10%  
Pulse Width µs  
Duty Factor   
V
GS  
t
t
r
t
t
f
d(on)  
d(off)  
Fig 23a. Switching Time Test Circuit  
Fig 23b. Switching Time Waveforms  
Id  
Current Regulator  
Same Type as D.U.T.  
Vds  
Vgs  
50K  
.2F  
12V  
.3F  
+
V
DS  
D.U.T.  
-
Vgs(th)  
V
GS  
3mA  
I
I
D
G
Qgs1  
Qgs2  
Qgd  
Qgodr  
Current Sampling Resistors  
Fig 24a. Gate Charge Test Circuit  
Fig 24b. Gate Charge Waveform  
8
www.irf.com  
AUIRLS3036-7P  
D2Pak - 7 Pin Package Outline  
Dimensions are shown in millimeters (inches)  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
www.irf.com  
9
AUIRLS3036-7P  
D2Pak - 7 Pin Part Marking Information  
Part Number  
AULS3036-7P  
Date Code  
Y= Year  
WW= Work Week  
A= Automotive, Lead Free  
IR Logo  
YWWA  
XX or XX  
Lot Code  
D2Pak - 7 Pin Tape and Reel  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
10  
www.irf.com  
AUIRLS3036-7P  
Ordering Information  
Base part number  
Package Type  
Standard Pack  
Form  
Complete Part Number  
Quantity  
AUIRLS3036-7P  
D2Pak 7 Pin  
Tube  
50  
800  
800  
AUIRLS3036-7P  
AUIRLS3036-7TRL  
AUIRLS3036-7TRR  
Tape and Reel Left  
Tape and Reel Right  
www.irf.com  
11  
AUIRLS3036-7P  
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corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or  
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acknowledgment.  
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing  
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government  
requirements, testing of all parameters of each product is not necessarily performed.  
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