AUIRLS3114ZTRL [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;![AUIRLS3114ZTRL](http://pdffile.icpdf.com/pdf2/p00302/img/icpdf/AUIRLS3114ZT_1821572_icpdf.jpg)
型号: | AUIRLS3114ZTRL |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
文件: | 总13页 (文件大小:240K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AUTOMOTIVE GRADE
AUIRLS3114Z
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
l
Advanced Process Technology
VDSS
RDS(on) typ.
max.
40V
D
Ultra Low On-Resistance
Logic Level Gate Drive
EnhanceddV/dTanddI/dTcapability
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
AutomotiveQualified*
3.8m
4.9m
122A
Ω
Ω
G
ID
(Silicon Limited)
S
ID
56A
(Wirebond Limited)
Description
Specifically designed for Automotive applications, this HEXFET®
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve
extremelylowon-resistancepersiliconarea. Additionalfeaturesof
thisdesign area175°Cjunctionoperatingtemperature,fastswitch-
ingspeedandimprovedrepetitiveavalancherating.Thesefeatures
combine to make this design an extremely efficient and reliable
deviceforuseinAutomotiveapplicationsandawidevarietyofother
applications.
S
D
G
D2Pak
AUIRLS3114Z
G
Gate
D
S
Drain
Source
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube
50
800
800
AUIRLS3114Z
AUIRLS3114ZTRL
AUIRLS3114ZTRR
AUIRLS3114Z
D2-Pak
Tape and Reel Left
Tape and Reel Right
AbsoluteMaximumRatings
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. Thesearestressratingsonly;andfunctional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated
conditionsforextendedperiodsmayaffectdevicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedand
still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
122
86
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wirebond Limited)
Pulsed Drain Current
56
488
143
0.95
± 20
168
518
PD @TC = 25°C
W
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
VGS
Gate-to-Source Voltage
EAS (Thermally Limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
EAS (Tested)
IAR
A
See Fig. 12a, 12b, 15, 16
EAR
mJ
Repetitive Avalanche Energy
Peak Diode Recovery
2.3
dv/dt
TJ
V/ns
-55 to + 175
Operating Junction and
TSTG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Parameter
Typ.
–––
Max.
1.05
40
Units
Rθ
Junction-to-Case
JC
°C/W
Rθ
–––
Junction-to-Ambient (PCB Mount)
JA
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
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AUIRLS3114Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
40
–––
0.03
3.8
–––
–––
4.9
V
–––
–––
1
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 56A
VDS = VGS, ID = 100μA
VDS = 10V, ID = 56A
Ω
m
VGS(th)
1.7
2.5
V
Δ
VGS(th)
Gate Threshold Voltage Coefficient
Forward Transconductance
–––
103
–––
–––
–––
–––
–––
-6.6
–––
0.8
––– mV/°C
gfs
RG
–––
–––
20
S
Ω
Internal Gate Resistance
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 16V
μA
250
100
-100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min. Typ. Max. Units
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
35
53
ID = 56A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
11
–––
VDS =20V
VGS = 4.5V
VDD = 20V
nC
ns
16
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
271
43
ID = 56A
td(off)
tf
Ω
RG = 3.7
VGS = 4.5V
VGS = 0V
Turn-Off Delay Time
Fall Time
60
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
3617
633
345
2378
570
875
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
V
DS = 25V
ƒ = 1.0 MHz, See Fig. 5
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
pF
V
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
D
–––
––– 122
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
integral reverse
–––
–––
488
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
33
1.3
50
48
V
TJ = 25°C, IS = 56A, VGS = 0V
TJ = 25°C, IF = 56A, VDD = 20V,
di/dt = 100A/μs
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
Qrr
ton
32
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ISD ≤ 56A, di/dt ≤ 263A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging
Calculated continuous current based on maximum
allowable junction temperature. Bond wire current limit is
56A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting
time as Coss while VDS is rising from 0 to 80% VDSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer
to application note #AN-994.
arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.107mH,
RG = 50Ω, IAS = 56A, VGS =10V. Part not recommended
for use above this value.
Rθ is measured at TJ approximately 90°C
2
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AUIRLS3114Z
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.8V
2.5V
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.8V
2.5V
TOP
TOP
BOTTOM
BOTTOM
2.5V
2.5V
1
60μs PULSE WIDTH
Tj = 175°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
175
150
125
100
75
1000
100
10
T
= 25°C
J
T = 175°C
J
T
= 175°C
J
T
= 25°C
J
50
1
V
= 25V
25
DS
V
= 10V
DS
≤
60μs PULSE WIDTH
0
0.1
0
20
40
60
80
1
2
3
4
5
6
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Typical Forward Transconductance
Fig 3. Typical Transfer Characteristics
vs. Drain Current
3
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AUIRLS3114Z
100000
10000
1000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 56A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
V
V
= 32V
= C + C
DS
ds
gd
= 20V
DS
VDS= 8V
C
iss
6.0
C
oss
4.0
C
rss
2.0
100
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
10 20 30 40 50 60 70 80 90
V
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100μsec
1msec
10msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
V
= 0V
GS
0.1
1.0
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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AUIRLS3114Z
140
120
100
80
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
= 56A
D
Wirebond Limitation
V
= 10V
GS
60
40
20
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
, Case Temperature (°C)
T
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Normalized On-Resistance
Case Temperature
vs. Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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AUIRLS3114Z
15V
700
600
500
400
300
200
100
0
I
D
DRIVER
+
L
V
DS
TOP
9.6A
20A
BOTTOM 56A
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
I
AS
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Q
G
2.6
2.4
2.2
2.0
1.8
1.6
1.4
10 V
Q
Q
GD
GS
V
G
Charge
I
= 100μA
D
1.2
1.0
0.8
0.6
0.4
ID = 250μA
= 1.0mA
I
Fig 13a. Basic Gate Charge Waveform
D
ID = 10mA
I
= 1.0A
D
-75 -50 -25
0
25 50 75 100 125 150 175
T , Temperature ( °C )
J
L
VCC
Fig 14. Threshold Voltage vs. Temperature
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
6
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AUIRLS3114Z
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
180
160
140
120
100
80
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 1.0% Duty Cycle
= 56A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
60
40
6. Iav = Allowable avalanche current.
20
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
vs. Temperature
7
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AUIRLS3114Z
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
•
dv/dt controlled by RG
• Driver same type as D.U.T.
RG
+
-
Body Diode
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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AUIRLS3114Z
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
PartNumber
AULS3114Z
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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AUIRLS3114Z
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRLS3114Z
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments:
This part
number(s) passed
Qualification Level
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
MSL1
Class M4(+/- 600V )†††
3L-D2 PAK
Machine Model
(per AEC-Q101-002)
Class H1C(+/- 2000V )†††
(per AEC-Q101-001)
ESD
Human Body Model
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Charged Device Model
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
11
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AUIRLS3114Z
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to
productdiscontinuanceandprocesschangenotification. AllproductsaresoldsubjecttoIR’stermsandconditions
of sale supplied at the time of order acknowledgment.
IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordance
withIR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IRassumesnoliabilityforapplicationsassistanceorcustomerproductdesign.Customersareresponsiblefortheir
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
ReproductionofIRinformationinIRdatabooksordatasheetsispermissibleonlyifreproductioniswithoutalteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this
information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such
altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IRproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplant
intothebody,orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhichthefailure
oftheIRproductcouldcreateasituationwherepersonalinjuryordeathmayoccur. ShouldBuyerpurchaseoruse
IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International
Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatIRwasnegligent
regarding the design or manufacture of the product.
OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,
aredesignedandmanufacturedtomeetDLAmilitaryspecificationsrequiredbycertainmilitary,aerospaceorother
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible
for compliance with all legal and regulatory requirements in connection with such use.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecific
IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including
thedesignation“AU”. Buyersacknowledgeandagreethat, iftheyuseanynon-designatedproductsinautomotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
12
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AUIRLS3114Z
Revision History
Date
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
•
•
3/3/2014
13
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INFINEON
![](http://pdffile.icpdf.com/pdf1/p00198/img/page/AUIRLS_1115577_files/AUIRLS_1115577_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00198/img/page/AUIRLS_1115577_files/AUIRLS_1115577_2.jpg)
AUIRLS4030-7TRR
Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00261/img/page/AUIRLS4030TR_1575036_files/AUIRLS4030TR_1575036_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00261/img/page/AUIRLS4030TR_1575036_files/AUIRLS4030TR_1575036_2.jpg)
AUIRLS4030TRL
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00212/img/page/AUIRLS_1197611_files/AUIRLS_1197611_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00212/img/page/AUIRLS_1197611_files/AUIRLS_1197611_2.jpg)
AUIRLS4030TRR
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00303/img/page/AUIRLSL4030_1829125_files/AUIRLSL4030_1829125_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00303/img/page/AUIRLSL4030_1829125_files/AUIRLSL4030_1829125_2.jpg)
AUIRLSL4030
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00211/img/page/AUIRLU_1195126_files/AUIRLU_1195126_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00211/img/page/AUIRLU_1195126_files/AUIRLU_1195126_2.jpg)
AUIRLU024Z
Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3
INFINEON
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