AUIRLS4030-7P [INFINEON]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET
| 型号： | AUIRLS4030-7P |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总12页 (文件大小：739K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96395A
AUTOMOTIVE GRADE
AUIRFS3107-7P
HEXFET® Power MOSFET
Features
Advanced Process Technology
D
VDSS
75V
UltraLowOn-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
RDS(on) typ.
2.1m
2.6m
260A
Ω
Ω
max.
ID (Silicon Limited)
ID (Package Limited)
G
240A
S
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniquestoachieveextremelylowon-resistancepersilicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitiveavalancherating. Thesefeaturescombinetomake
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
S
S
S
S
S
G
D2Pak 7 Pin
AUIRFS3107-7P
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
260
ID @ TC = 100°C
ID @ TC = 25°C
IDM
190
A
240
1060
PD @TC = 25°C
W
370
Maximum Power Dissipation
2.5
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
± 20
320
Gate-to-Source Voltage
mJ
A
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
See Fig. 14, 15, 22a, 22b
EAR
mJ
Repetitive Avalanche Energy
13
Peak Diode Recovery
dv/dt
TJ
V/ns
-55 to + 175
Operating Junction and
TSTG
°C
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.40
40
Units
°C/W
Rθ
Junction-to-Case
JC
RθJA
–––
Junction-to-Ambient (PCB Mount)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/1/11
AUIRFS3107-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
75 ––– –––
––– 0.083 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
V
/ T
(BR)DSS Δ
Δ
J
RDS(on)
VGS(th)
gfs
–––
2.0
2.1
2.6
4.0
VGS = 10V, ID = 160A
VDS = VGS, ID = 250μA
VDS = 25V, ID = 160A
m
V
Ω
–––
Forward Transconductance
260 ––– –––
S
Ω
μA
RG
IDSS
–––
––– –––
Internal Gate Resistance
Drain-to-Source Leakage Current
2.1
–––
20
V
V
DS = 75V, VGS = 0V
––– ––– 250
––– ––– 100
––– ––– -100
DS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
GS = -20V
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
––– 160 240
Conditions
Qg
Total Gate Charge
ID = 160A
DS = 38V
VGS = 10V
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
–––
–––
38
57
–––
–––
V
nC
ns
Qgd
Qsync
––– 103 –––
ID = 160A, VDS =0V, VGS = 10V
VDD = 49V
td(on)
–––
–––
17
80
–––
–––
tr
ID = 160A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 100 –––
––– 64 –––
R = 2.7
Ω
G
VGS = 10V
Ciss
Input Capacitance
––– 9200 –––
––– 850 –––
––– 400 –––
––– 1150 –––
––– 1500 –––
VGS = 0V
Coss
Output Capacitance
Reverse Transfer Capacitance
V
DS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Crss
Coss eff. (ER)
Coss eff. (TR)
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– –––
MOSFET symbol
D
S
260
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
A
G
ISM
––– ––– 1060
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
–––
–––
V
TJ = 25°C, IS = 160A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 64V,
IF = 160A
di/dt = 100A/μs
–––
–––
52
63
ns
nC
Qrr
Reverse Recovery Charge
––– 110 –––
––– 160 –––
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
3.8
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 240A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.026mH
RG = 25Ω, IAS = 160A, VGS =10V. Part not recommended for use
above this value .
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering echniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
.
.
RθJC value shown is at time zero.
ISD ≤ 160A, di/dt ≤ 1420A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
2
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AUIRFS3107-7P
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
7L-D2PAK
MSL1
Moisture Sensitivity Level
Class M4(+/- 800V )†††
Machine Model
(per AEC-Q101-002)
Class H3A(+/- 6000V )†††
(per AEC-Q101-001)
ESD
Human Body Model
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Charged Device Model
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
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3
AUIRFS3107-7P
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
100
4.5V
60μs PULSE WIDTH
Tj = 25°C
≤
60μs PULSE WIDTH
≤
Tj = 175°C
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
I
= 160A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
= 25V
J
1
V
DS
60μs PULSE WIDTH
≤
0.1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
V
, Gate-to-Source Voltage (V)
J
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
C
= 0V,
f = 1 MHZ
GS
I = 160A
D
= C + C , C SHORTED
iss
gs gd ds
12.0
C
= C
V
V
= 60V
= 38V
rss
gd
DS
DS
C
= C + C
ds gd
oss
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
1
10
100
1000
0
25 50 75 100 125 150 175 200 225
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
Q
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRFS3107-7P
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100μsec
T
= 25°C
10msec
J
1msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
300
250
200
150
100
50
95
90
85
80
75
70
Id = 5mA
Limited By Package
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1400
I
D
1200
1000
800
600
400
200
0
TOP
28A
50A
BOTTOM 160A
-10
0
10 20 30 40 50 60 70 80
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
V
J
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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5
AUIRFS3107-7P
1
D = 0.50
0.1
0.01
0.20
R1
R1
R2
R2
R3
R3
R4
R4
0.10
0.05
Ri (°C/W) τi (sec)
0.01083
0.05878
0.15777
0.17478
0.00001
τ
τ
J τJ
τ
Cτ
0.000086
0.001565
0.011192
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Δ
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
ΔΤ
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
350
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1.0% Duty Cycle
= 160A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRFS3107-7P
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
30
25
20
15
10
5
I = 106A
F
V
= 64V
R
T = 25°C
J
T = 125°C
J
I
I
I
= 250μA
= 1.0mA
= 1.0A
D
D
D
0
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
0
200
400
600
800
1000
T
di /dt (A/μs)
J
F
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
30
1000
900
800
700
600
500
400
300
200
100
I
= 160A
= 64V
I
= 106A
= 64V
F
F
V
V
25
20
15
10
5
R
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
1000
I
= 160A
= 64V
F
900
800
700
600
500
400
300
200
V
R
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
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7
AUIRFS3107-7P
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
InductorCurrent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
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AUIRFS3107-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
PartNumber
AUFS3107-7P
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFS3107-7P
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFS3107-7P
Ordering Information
Base part
Package Type
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
AUIRFS3107-7P
D2Pak -7Pin
AUIRFS3107-7P
AUIRFS3107-7TRL
AUIRFS3107-7TRR
800
800
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11
AUIRFS3107-7P
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at
any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provideadequatedesignandoperatingsafeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformationwithalterations
isanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation. Informationof third
parties may be subject to additional restrictions.
ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproductorservice
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
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and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
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are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
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Tel:(310)252-7105
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Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3
INFINEON
AUIRLU2905
Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, IPAK-3
INFINEON
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