AUIRLS3034-7P [INFINEON]
Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7;
| 型号： | AUIRLS3034-7P |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：690K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
AUIRLS3034-7P
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
40V
RDS(on) typ.
1.0m
max.
ID (Silicon Limited)
ID (Package Limited)
1.4m
380A
240A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
D2Pak 7 Pin
AUIRLS3034-7P
G
D
S
Gate
Drain
Source
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Tube
Quantity
50
AUIRLS3034-7P
AUIRLS3034-7P
D2Pak 7 Pin
AUIRLS3034-7TRL
Tape and Reel Left
800
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Max.
380
Units
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
270
240
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
1540
380
2.5
PD @TC = 25°C
W
W/°C
V
mJ
A
VGS
EAS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
250
IAR
Avalanche Current
See Fig.14,15, 22a, 22b
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
V/ns
1.3
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
°C
300
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Case
–––
0.40
RJC
RJA
°C/W
Junction-to-Ambient
–––
40
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRLS3034-7P
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
––– 0.035 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ
–––
–––
1.0
1.0
1.2
–––
1.4
1.7
2.5
V
GS = 10V, ID = 200A
GS = 4.5V, ID = 180A
RDS(on)
Static Drain-to-Source On-Resistance
m
V
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
Gate Resistance
V
VDS = VGS, ID = 250µA
VDS = 10V, ID = 220A
370 ––– –––
S
RG
–––
––– –––
––– ––– 250
––– ––– 100
––– ––– -100
1.9
–––
20
VDS = 40V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
VDS = 40V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS = 20V
GS = -20V
nA
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
––– 120 180
ID = 170A
VDS = 20V
VGS = 4.5V
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
–––
–––
–––
–––
32
71
49
71
–––
–––
–––
–––
nC
ns
VDD = 26V
ID = 220A
RG= 2.7
VGS = 4.5V
VGS = 0V
––– 590 –––
––– 94 –––
––– 200 –––
––– 10990 –––
––– 2030 –––
VDS = 40V
Crss
Reverse Transfer Capacitance
––– 1100 –––
ƒ = 1.0MHz
pF
Coss eff.(ER)
Coss eff.(TR)
Diode Characteristics
Parameter
Effective Output Capacitance (Energy Related) ––– 2520 –––
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
Effective Output Capacitance (Time Related) ––– 3060 –––
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 200A,VGS = 0V
Continuous Source Current
(Body Diode)
IS
––– ––– 380
A
––– ––– 1540
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
ISM
VSD
trr
––– –––
1.3
–––
–––
V
–––
–––
46
49
TJ = 25°C
TJ = 125°C
VDD = 34V
IF = 220A,
Reverse Recovery Time
Reverse Recovery Charge
ns
––– 100 –––
––– 110 –––
TJ = 25°C di/dt = 100A/µs
TJ = 125°C
Qrr
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
3.7
–––
TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.010mH, RG = 25, IAS = 220A, VGS =10V. Part not recommended for use above this value.
ISD 220A, di/dt 1240A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
RJC value shown is at time zero
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2015-11-4
AUIRLS3034-7P
10000
1000
100
100000
10000
1000
100
VGS
10V
60µs PULSE WIDTH
Tj = 175°C
VGS
10V
TOP
60µs PULSE WIDTH
Tj = 25°C
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
2.5V
10
2.5V
10
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 200A
= 10V
D
V
GS
100
10
1
T
= 175°C
J
T
= 25°C
J
V
= 25V
DS
60µs PULSE WIDTH
0.1
1
2
3
4
5
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
V
, Gate-to-Source Voltage (V)
J
GS
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
5.0
GS
C
C
C
+ C , C
SHORTED
I = 170A
D
iss
gs
gd
ds
V
V
= 32V
= 20V
DS
DS
= C
rss
oss
gd
= C + C
4.0
3.0
2.0
1.0
0.0
ds
gd
C
iss
C
oss
C
rss
0.1
1
10
100
0
25
50
75
100
125
150
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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2015-11-4
AUIRLS3034-7P
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
Limited by package
T
= 25°C
J
10msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
3.0
GS
1
1.0
0
1
10
100
0.0
0.5
V
1.0
1.5
2.0
2.5
3.5
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
50
48
46
44
42
40
400
300
200
100
0
Id = 5mA
Limited By Package
-60 -40 -20
0
20 40 60 80 100120140160180
, Temperature ( °C )
25
50
75
100
125
150
175
T
J
T
, Case Temperature (°C)
C
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
2.5
1200
I
D
TOP
47A
94A
1000
800
600
400
200
0
2.0
1.5
1.0
0.5
0.0
BOTTOM 220A
-5
0
5
10 15 20 25 30 35 40 45
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
V
Drain-to-Source Voltage (V)
J
DS,
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 11. Typical COSS Stored Energy
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AUIRLS3034-7P
1
D = 0.50
0.1
0.20
0.10
0.05
Ri (°C/W)
I (sec)
0.00741
0.05041
0.18384
0.15864
0.000005
0.000038
0.001161
0.008809
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
TOP
BOTTOM 1.0% Duty Cycle
= 220A
Single Pulse
I
D
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
0
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
P
D (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
J
E
AS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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2015-11-4
AUIRLS3034-7P
16
14
12
10
8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 89A
= 34V
F
V
R
T = 25°C
J
T = 125°C
J
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
6
4
2
0
100 200 300 400 500 600 700
-75 -50 -25
0
25 50 75 100 125 150 175
di /dt (A/µs)
F
T
, Temperature ( °C )
J
Fig 16. Threshold Voltage vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
900
16
I = 134A
F
I
= 89A
= 34V
F
800
700
600
500
400
300
200
100
0
V
14
12
10
8
V
= 34V
R
R
T = 25°C
T = 25°C
J
T = 125°C
J
J
T = 125°C
J
6
4
2
0
100 200 300 400 500 600 700 800
0
100 200 300 400 500 600 700
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
800
700
600
500
400
300
200
100
0
I
= 134A
= 34V
F
V
R
T = 25°C
J
T = 125°C
J
0
100 200 300 400 500 600 700 800
di /dt (A/µs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRLS3034-7P
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
15V
V
(BR)DSS
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
Fig 23b. Switching Time Waveforms
Fig 23a. Switching Time Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
7
2015-11-4
AUIRLS3034-7P
D2Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches))
D2Pak - 7 Pin Part Marking Information
Part Number
AULS3034-7P
Date Code
IR Logo
Y= Year
WW= Work Week
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
2015-11-4
AUIRLS3034-7P
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
2015-11-4
AUIRLS3034-7P
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
D2-Pak 7 Pin
MSL1
Class M4 (+/- 800V)†
AEC-Q101-002
Class H3A (+/- 6000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest passing voltage.
Revision History
Date
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 8
Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6.
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
4/2/2014
11/4/2015
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
10
2015-11-4
相关型号：
AUIRLS3034-7TRL
Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
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