AUIRLR3105TRR [INFINEON]
AUTOMOTIVE GRADE; 汽车级
| 型号： | AUIRLR3105TRR |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE GRADE |
| 文件： | 总13页 (文件大小：632K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97703A
AUTOMOTIVEGRADE
AUIRLR3105
Features
HEXFET® Power MOSFET
l AdvancedPlanarTechnology
l Logic-LevelGateDrive
Dynamic dV/dT Rating
l LowOn-Resistance
l 175°COperatingTemperature
l Fast Switching
l FullyAvalancheRated
l RepetitiveAvalancheAllowed
up to Tjmax
D
V(BR)DSS
55V
RDS(on) typ.
30m
37m
Ω
Ω
G
max
S
ID
25A
l Lead-Free,RoHSCompliant
l AutomotiveQualified*
D
Description
S
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
D-Pak
AUIRLR3105
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
25
Parameter
Units
Continuous Drain Current, VGS @ 10V
@ T = 25°C
C
I
I
I
D
D
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
18
@ T = 100°C
A
C
100
DM
57
P
@T = 25°C Power Dissipation
W
W/°C
V
D
C
0.38
± 16
Linear Derating Factor
Gate-to-Source Voltage
V
GS
EAS
61
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (tested )
IAR
94
See Fig. 12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
3.4
dv/dt
V/ns
-55 to + 175
T
J
T
Storage Temperature Range
°C
STG
300
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
2.65
50
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
°C/W
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/1/11
AUIRLR3105
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
ΔV(BR)DSS/ΔTJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
–––
1.0
30
37
43
VGS = 10V, ID = 15A
VGS = 5.0V, ID = 13A
VDS = VGS, ID = 250μA
VDS = 25V, ID = 15A
Ω
m
35
VGS(th)
Gate Threshold Voltage
–––
–––
–––
–––
–––
–––
3.0
–––
20
V
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
15
S
–––
–––
–––
–––
μA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
nA VGS = 16V
250
200
-200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
57
20
ID = 15A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
5.6
nC VDS = 44V
9.0
V
V
GS = 5.0V, See Fig. 6 & 13
DD = 28V
–––
–––
–––
–––
–––
ID = 15A
td(off)
tf
Turn-Off Delay Time
Fall Time
25
ns RG = 24 Ω
37
RD = 5.0Ω, See Fig. 18
Between lead,
LD
Internal Drain Inductance
4.5
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
710
150
28
–––
–––
–––
–––
–––
–––
VGS = 0V
Coss
Output Capacitance
pF VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
890
110
210
Coss
Output Capacitance
Effective Output Capacitance
V
V
GS = 0V, VDS = 44V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 44V
Coss eff.
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
25
MOSFET symbol
D
S
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
100
G
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
52
1.3
78
V
T = 25°C, I = 15A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 15A, VDD = 28V
J F
rr
di/dt = 100A/μs
Q
t
82
120
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Limited by TJmax, starting TJ = 25°C,
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
.
Limited by TJmax ' see Fig 12a, 12b, 15, 16 for typical repetitive
avalanche performance.
L = 0.55mH, RG = 25Ω, IAS = 15A, VGS =10V.
ISD ≤ 25A, di/dt ≤ 290A/μs, VDD ≤ V(BR)DSS
,
This value determined from sample failure population. 100%
tested to this value in production.
TJ ≤ 175°C.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
R is measured at TJ of approximately 90°C.
θ
2
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AUIRLR3105
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
D-Pak
N/A
Class M2(+/- 200V )†††
Machine Model
(per AEC-Q101-002)
Class H1A(+/- 500V )†††
(per AEC-Q101-001)
Human Body Model
ESD
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Charged Device
Model
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
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3
AUIRLR3105
100
10
1
1000
VGS
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
TOP
TOP
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
100
10
BOTTOM2.0V
BOTTOM2.0V
1
2.0V
0.1
0.01
2.0V
20μs PULSE WIDTH
Tj = 175°C
20μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
30
T
= 175°C
T
= 25°C
J
J
25
20
15
10
5
100.00
10.00
1.00
T
= 175°C
J
T
= 25°C
J
0.10
V
= 25V
V
= 25V
DS
20μs PULSE WIDTH
DS
20μs PULSE WIDTH
0.01
0
2.0
4.0
6.0
8.0
0
10
20
30
40
V
, Gate-to-Source Voltage (V)
I
Drain-to-Source Current (A)
GS
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
4
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AUIRLR3105
1600
1200
800
400
0
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 15A
D
= C + C
,
C
ds
SHORTED
iss
gs
gd
V
= 44V
DS
C
= C
rss
gd
VDS= 28V
VDS= 11V
C
= C + C
oss
ds
gd
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
G
20
30
40
1
10
100
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100μsec
1msec
T
= 25°C
J
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
nce
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRLR3105
30
25
20
15
10
5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25A
=
I
D
V
= 10V
GS
0
-60 -40 -20
0
20 40
60 80 100 120 140 160 180
°
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T , Junction Temperature
(
C)
T
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.02
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRLR3105
15V
100
80
60
40
20
0
I
D
TOP
6.1A
11A
15A
DRIVER
+
L
V
DS
BOTTOM
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
°
( C)
150
175
Starting Tj, Junction Temperature
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
2.0
V
G
I
= 250μA
D
1.5
1.0
0.5
0.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
V
GS
T
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRLR3105
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
Δ
0.01
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
10
0.05
0.10
1
0.1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
70
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 50% Duty Cycle
= 15A
Single Pulse
60
50
40
30
20
10
0
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRLR3105
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRLR3105
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
PartNumber
AULR3105
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRLR3105
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11
AUIRLR3105
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
AUIRLR3105
Dpak
AUIRLR3105
AUIRLR3105TR
AUIRLR3105TRL
AUIRLR3105TRR
12
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AUIRLR3105
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are respon-
sible for their products and applications using IR components. To minimize the risks with customer
products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Repro-
duction of this information with alterations is an unfair and deceptive business practice. IR is not
responsible or liable for such altered documentation. Information of third parties may be subject to
additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or in other applications intended to support or sustain life, or in any other
application in which the failure of the IR product could create a situation where personal injury or death may
occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application,
Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or
manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified
by DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk
and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a
part number including the designation AU. Buyers acknowledge and agree that, if they use any non-
designated products in automotive applications, IR will not be responsible for any failure to meet such
requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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13
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