AUIRLR3110ZTR_技术文档

PD - 96369

AUTOMOTIVE GRADE

AUIRLR3110Z

AUIRLU3110Z

HEXFET^®Power MOSFET

100V

Features

l

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

D

S

l

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

11mΩ

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

14m

63A

Ω

G

Automotive Qualified *

42A

Description

D

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisdesign area175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

S

D

S

G

I-Pak

AUIRLU3110Z

D-Pak

AUIRLR3110Z

G

D

S

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

devicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillair

conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

63

Units

(Silicon Limited)

(Package Limited)

I

@ T = 25°C

C

D

45

@ T = 100°C

C

A

42

@ T = 25°C

C

250

DM

140

Power Dissipation

W

W/°C

V

P

@T = 25°C

C

D

0.95

Linear Derating Factor

±16

Gate-to-Source Voltage

V

GS

E_{AS (Thermally limited)}

110

140

Single Pulse Avalanche Energy

mJ

E_AS(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

A

E_AR

Repetitive Avalanche Energy

mJ

-55 to + 175

Operating Junction and

T

J

Storage Temperature Range

°C

STG

300

Reflow Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

40

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

1

05/03/11

AUIRLR/U3110Z

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250μA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

100

–––

1.0

–––

0.077

11

–––

14

V

ΔV_(BR)DSS/ΔT_J

R_DS(on)

V/°C Reference to 25°C, I_D= 1mA

mΩ

V

_GS= 10V, I_D= 38A

12

16

V_GS= 4.5V, I_D= 32A

V_GS(th)

Gate Threshold Voltage

–––

2.5

–––

20

V

S

V_DS= V_GS, I_D= 100μA

gfs

I_DSS

Forward Transconductance

Drain-to-Source Leakage Current

52

V

_DS= 25V, I_D= 38A

–––

μA

_DS= 100V, V_GS= 0V

250

200

-200

V_DS= 100V, V_GS= 0V, T_J= 125°C

nA V_GS= 16V

_GS= -16V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

V

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

34

10

48

I_D= 38A

nC V_DS= 50V

V_GS= 4.5V

–––

15

24

V_DD= 50V

110

33

I_D= 38A

t_d(off)

t_f

Ω

R_G= 3.7

Turn-Off Delay Time

Fall Time

ns

48

V_GS= 4.5V

L_D

D

S

Internal Drain Inductance

4.5

Between lead,

nH 6mm (0.25in.)

from package

G

L_S

Internal Source Inductance

–––

7.5

–––

and center of die contact

V_GS= 0V

_DS= 25V

pF ƒ = 1.0MHz

C_iss

Input Capacitance

–––

3980

310

–––

C_oss

Output Capacitance

V

C_rss

Reverse Transfer Capacitance

Output Capacitance

130

C_oss

1820

170

V

_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

_GS= 0V, V_DS= 80V, ƒ = 1.0MHz

_GS= 0V, V_DS= 0V to 80V

C_oss

Output Capacitance

C_osseff.

Effective Output Capacitance

320

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

I

Continuous Source Current

–––

63

S

(Body Diode)

Pulsed Source Current

A

showing the

integral reverse

G

I

–––

250

SM

S

(Body Diode)

p-n junction diode.

V

t

Diode Forward Voltage

–––

34

1.3

51

63

V

T = 25°C, I = 38A, V = 0V

SD

J S GS

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns

nC

T = 25°C, I = 38A, V_DD= 50V

J F

di/dt = 100A/μs

rr

Q

t

42

rr

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

on

Notes:

Repetitive rating; pulse width limited by max. junction

temperature. (See fig. 11).

This value determined from sample failure population. 100%

tested to this value in production.

Limited by T_Jmax, starting T_J= 25°C, L = 0.16mH,R_G= 25Ω,

I_AS= 38A, V_GS=10V. Part not recommended for use above this

When mounted on 1" square PCB (FR-4 or G-10 Material).

R_θis measured at T_Japproximately 90°C.

value.

Calculated continuous current based on maximum allowable

Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

C_osseff. is a fixed capacitance that gives the same charging

junction temperature. Bond wire current limit is 42A. Note that

current limitations arising from heating of the device leads may

occur with some lead mounting arrangements.

time as C_osswhile V_DSis rising from 0 to 80% V_DSS

.

ꢀ Limited by T_Jmax, see Fig.12a, 12b, 15, 16 for typical

repetitive avalanche performance.

2

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AUIRLR/U3110Z

Qualification Information^†

Automotive

††

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive

qualification. IR’s Industrial and Consumer qualification

level is granted by extension of the higher Automotive level.

Moisture Sensitivity Level

MSL1

N/A

3L-D PAK

3L-I PAK

Class M4(+/- 700V )^†††

Machine Model

(per AEC-Q101-002)

Class H1C(+/- 2000V )^†††

(per AEC-Q101-001)

Human Body Model

ESD

Class C5(+/- 2000V )^†††

(per AEC-Q101-005)

Charged Device

Model

Yes

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Exceptions to AEC-Q101 requirements are noted in the qualification report.

††† Highest passing voltage

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3

AUIRLR/U3110Z

1000

100

10

1000

100

10

VGS

15V

10V

8.0V

4.5V

3.5V

3.0V

2.7V

2.5V

VGS

15V

10V

8.0V

4.5V

3.5V

3.0V

2.7V

2.5V

TOP

BOTTOM

1

2.5V

0.1

2.5V

60μs PULSE WIDTH

Tj = 175°C

≤

60μs PULSE WIDTH

Tj = 25°C

≤

1

0.01

0.1

1

10

100

1000

0.1

1

10

100

1000

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

10

150

125

100

75

T

= 25°C

J

T

= 175°C

J

T

= 175°C

J

50

T

= 25°C

J

1

V

= 10V

25

V

= 25V

DS

300μs PULSE WIDTH

≤

60μs PULSE WIDTH

0.1

0

2

4

6

8 10 12 14 16

0

25

50

75

I ,Drain-to-Source Current (A)

V

, Gate-to-Source Voltage (V)

D

GS

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

4

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AUIRLR/U3110Z

5.0

4.0

3.0

2.0

1.0

0.0

100000

10000

1000

100

V

= 0V,

= C

f = 1 MHZ

GS

I = 38A

D

C

+ C , C

SHORTED

ds

iss

gs

gd

= C

rss

oss

gd

V

= 80V

= 50V

= C + C

DS

ds

gd

C

iss

C

oss

C

rss

10

0

10

20

30

40

1

10

, Drain-to-Source Voltage (V)

100

Q

Total Gate Charge (nC)

V

G

DS

Fig 5. Typical Capacitance vs.

Fig 6. Typical Gate Charge vs.

Drain-to-SourceVoltage

Gate-to-SourceVoltage

1000

100

10

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

T

= 175°C

T

J

100μsec

= 25°C

1msec

J

10msec

DC

1

Tc = 25°C

Tj = 175°C

Single Pulse

V

= 0V

GS

1

0.1

0

1

10

100

1000

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

, Source-to-Drain Voltage (V)

V

, Drain-to-Source Voltage (V)

V

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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5

AUIRLR/U3110Z

70

3.0

2.5

2.0

1.5

1.0

0.5

I

= 63A

D

V

= 10V

60

50

40

30

20

10

0

Limited By Package

GS

25

50

75

100

125

150

175

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

T

, Case Temperature (°C)

T

C

J

Fig 9. Maximum Drain Current vs.

Fig 10. Normalized On-Resistance

CaseTemperature

vs.Temperature

10

1

D = 0.50

0.20

R₁

R₂

0.10

0.05

0.1

0.01

Ri (°C/W) τi (sec)

τ

^Jτ_J

τ

0.383

0.000267

τ

^Cτ

¹τ₁

Ci= τi/Ri

τ

²τ₂

0.02

0.01

0.667

0.003916

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6

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AUIRLR/U3110Z

300

250

200

150

100

50

I

D

TOP

4.4A

6.5A

BOTTOM 38A

15V

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

V

20V

GS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

0

25

50

75

100

125

150

175

V

(BR)DSS

Starting T , Junction Temperature (°C)

J

t

p

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

I

AS

Fig 12b. Unclamped Inductive Waveforms

3.0

Q

G

2.5

2.0

1.5

1.0

0.5

0.0

10 V

Q

GD

GS

V

G

I

= 100μA

= 250μA

= 1.0mA

= 1.0A

D

Charge

Fig 13a. Basic Gate Charge Waveform

-75 -50 -25

0

T

25 50 75 100 125 150 175 200

, Temperature ( °C )

J

L

VCC

DUT

0

1K

Fig 14. Threshold Voltage vs. Temperature

Fig 13b. Gate Charge Test Circuit

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7

AUIRLR/U3110Z

100

Allowed avalanche Current vs avalanche

Duty Cycle = Single Pulse

Δ

pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

0.01

10

0.05

0.10

Allowed avalanche Current vs avalanche

1

ΔΤ

pulsewidth, tav, assuming

Tstart = 150°C.

j = 25°C and

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

150

125

100

75

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long as

neither Tjmax nor Iav (max) is exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

TOP

BOTTOM 1% Duty Cycle

= 38A

Single Pulse

I

D

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

50

6. I_av= Allowable avalanche current.

25

7. ΔT = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 15, 16).

t_{av =}Average time in avalanche.

0

25

50

75

100

125

150

175

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

Starting T , Junction Temperature (°C)

J

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Fig 16. Maximum Avalanche Energy

vs.Temperature

8

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AUIRLR/U3110Z

Driver Gate Drive

P.W.

D =

D.U.T

Period

+

*

=10V

V

GS

CircuitLayoutConsiderations

• LowStrayInductance

• Ground Plane

• LowLeakageInductance

Current Transformer

-

D.U.T. I Waveform

SD

+

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

-

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

• dv/dtcontrolledbyR_G

Re-Applied

Voltage

R_G

+

-

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Body Diode

Forward Drop

Inductor Curent

I

SD

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power

MOSFETs

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

-

10V

PulseWidth ≤ 1 µs

Duty Factor≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

r

t

f

d(on)

d(off)

Fig 18b. Switching Time Waveforms

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9

AUIRLR/U3110Z

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

PartNumber

AULR3110Z

DateCode

Y= Year

WW= Work Week

A= Automotive, Lead Free

IRLogo

YWWA

XX or XX

LotCode

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

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AUIRLR/U3110Z

I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

PartNumber

AULU3110Z

DateCode

Y= Year

WW= Work Week

A= Automotive, Lead Free

IRLogo

YWWA

XX or XX

LotCode

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

11

AUIRLR/U3110Z

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

12

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AUIRLR/U3110Z

Ordering Information

Base part

Package Type

Standard Pack

Complete Part Number

Form

Quantity

AUIRLR3110Z

DPak

IPak

Tube

Tape and Reel

Tape and Reel Left

Tape and Reel Right

Tube

75

AUIRLR3110Z

AUIRLR3110ZTR

AUIRLR3110ZTRL

AUIRLR3110ZTRR

AUIRLU3110Z

2000

3000

75

AUIRLU3110Z

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13

AUIRLR/U3110Z

IMPORTANTNOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the

right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time

and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry

and / or customer specific requirements with regards to product discontinuance and process change notification. All products are

sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard

warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except

where mandated by government requirements, testing of all parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and

applications using IR components. To minimize the risks with customer products and applications, customers should provide

adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is

accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is

an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties

may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service

voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice.

IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,

or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create

a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or

unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly

or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges

that IR was negligent regarding the design or manufacture of the product.

IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products

are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet

military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-

grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in

connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products

are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers

acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any

failure to meet such requirements

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLDHEADQUARTERS:

101N.Sepulveda Blvd, El Segundo, California 90245

Tel:(310)252-7105

14

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型号：	AUIRLR3110ZTR
厂家：	Infineon
描述：	AUTOMOTIVE GRADE 汽车级
文件：	总14页 (文件大小：269K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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