AUIRLR3410 [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	AUIRLR3410
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 晶体晶体管功率场效应晶体管
文件：	总12页 (文件大小：247K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 97491

AUTOMOTIVE GRADE

AUIRLR3410

Features

Advanced Planar Technology

HEXFET^®Power MOSFET

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

V_(BR)DSS

R_DS(on)max.

I_D

100V

105m

17A

Ω

Fully Avalanche Rated

Repetitive Avalanche Allowed up to

Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

Description

SpecificallydesignedforAutomotiveapplications,

this Stripe Planar design of HEXFET® Power

MOSFETsutilizesthelatestprocessingtechniques

toachievelowon-resistancepersiliconarea. This

benefit combined with the fast switching speed

andruggedizeddevicedesignthatHEXFETpower

MOSFETs are well known for, provides the

designer with an extremely efficient and reliable

device for use in Automotive and a wide variety of

other applications.

D-Pak

AUIRLR3410

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Continuous Drain Current, V_GS@ 10V

Units

@ T = 25°C

@ T = 100°C

Pulsed Drain Current

@T = 25°C Power Dissipation

W/°C

0.53

± 16

150

Linear Derating Factor

Gate-to-Source Voltage

E_AS

I_AR

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

9.0

E_AR

dv/dt

7.9

Repetitive Avalanche Energy

Peak Diode Recovery

V/ns

5.0

-55 to + 175

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

°C

STG

300

Thermal Resistance

Parameter

Typ.

–––

Max.

1.9

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

04/12/2010

AUIRLR3410

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

100 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

∆

V_(BR)DSS/ T_J

R_DS(on)

V_GS(th)

Breakdown Voltage Temp. Coefficient ––– 0.122 ––– V/°C Reference to 25°C, I_D= 1mA

Ω

–––

1.0

––– 0.105

––– 0.125

––– 0.155

V_GS= 10V, I_D= 10A

V_GS= 5.0V, I_D= 10A

V_GS= 4.0V, I_D= 9.0A

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 9.0A

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

2.0

–––

gfs

I_DSS

Forward Transconductance

Drain-to-Source Leakage Current

7.7

–––

µA

_DS= 100V, V_GS= 0V

250

100

V_DS= 80V, V_GS= 0V, T_J= 150°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

nA V_GS= 16V

V_GS= -16V

––– -100

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge

Q_g

Q_gs

Q_gd

t_d(on)

t_r

–––

7.2

4.8

I_D= 9.0A

nC V_DS= 80V

V_GS= 5.0V

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

V_DD= 50V

I_D= 9.0A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

ns R_G= 6.0 Ω

V_GS= 5.0V

L_D

Internal Drain Inductance

4.5

Between lead,

nH 6mm (0.25in.)

from package

L_S

Internal Source Inductance

–––

7.5

–––

and center of die contact

C_iss

C_oss

C_rss

Input Capacitance

–––

800

160

–––

V_GS= 0V

Output Capacitance

V_DS= 25V

ƒ = 1.0MHz

Reverse Transfer Capacitance

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

–––

MOSFET symbol

(Body Diode)

Pulsed Source Current

showing the

integral reverse

–––

(Body Diode)

p-n junction diode.

Diode Forward Voltage

–––

140

1.3

T = 25°C, I = 9.0A, V = 0V

J S GS

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

210

ns T = 25°C, I = 9.0A

J F

di/dt = 100A/µs

740 1100

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

This is applied for L_Sof D-PAK is measured between

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig.11 )

V_DD= 25V, starting T_J= 25°C, L = 3.1mH

R_G= 25Ω, I_AS= 9.0A. (See Figure 12)

I_SD≤ 9.0A, di/dt ≤ 540A/µs, V_DD≤ V_(BR)DSS, T_J≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ꢀ Uses IRL530N data and test conditions.

lead and center of die contact

When mounted on 1" square PCB (FR-4 or G-10

Material ). For recommended footprint and soldering

techniques refer to application note #AN-994.

R is measured at Tj approximately 90°C.

www.irf.com

AUIRLR3410

Qualification Information^†

Automotive

††

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification. IR’s

Industrial and Consumer qualification level is granted by extension of the

higher Automotive level.

Moisture Sensitivity Level

D-PAK

MSL1

Machine Model

Class M4

AEC-Q101-002

Class H1C

AEC-Q101-001

Class C5

Human Body Model

ESD

Charged Device

Model

AEC-Q101-005

Yes

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions to AEC-Q101 requirements are noted in the qualification report.

www.irf.com

AUIRLR3410

100

VGS

15V

VGS

TOP

15V

12V

10V

8.0V

6.0V

4.0V

3.0V

12V

10V

8.0V

6.0V

4.0V

3.0V

BOTTOM 2.5V

2.5V

20µs PULSE WIDTH

= 175°C

= 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

100

= 15A

T_J= 25°C

T_J= 175°C

V _DS= 50V

20µs PULSE WIDTH

₁₀A

= 10V

0.1

-60 -40 -20

20 40 60 80 100 120 140 160 180

T , Junction Temperature (°C)

V_GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

AUIRLR3410

1400

1200

1000

800

600

400

200

= 0V,

f = 1MHz

= 9.0A

iss

rss

oss

= C + C

SHORTED

= 80V

= 50V

= 20V

= C

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 175°C

100

10µs

T = 25°C

100µs

1ms

= 25°C

= 175°C

Single Pulse

= 0V

10ms

100

1000

0.4

0.6

0.8

1.0

1.2

1.4

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

www.irf.com

AUIRLR3410

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

5.0V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

T , Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

AUIRLR3410

350

300

250

200

150

100

TOP

3.7A

6.4A

BOTTOM 9.0A

15V

DRIVER

D.U.T

10V

Ω

0.01

Fig 12a. Unclamped Inductive Test Circuit

= 25V

175

100

125

150

Starting T , Junction Temperature (°C)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

Fig 12b. Unclamped Inductive Waveforms

50KΩ

.2µF

12V

.3µF

5.0 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

www.irf.com

AUIRLR3410

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

Period

D =

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

www.irf.com

AUIRLR3410

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak Part Marking Information

Part Number

AUIRLR3410

Date Code

Y= Year

WW= Work Week

A= Automotive

IR Logo

YWWA

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

AUIRLR3410

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

AUIRLR3410

Ordering Information

Base part

Package Type

Standard Pack

Form

Complete Part Number

Quantity

2000

3000

AUIRLR3410

Dpak

Tube

AUIRLR3410

AUIRLR3410TR

AUIRLR3410TRL

AUIRLR3410TRR

Tape and Reel

Tape and Reel Left

Tape and Reel Right

www.irf.com

AUIRLR3410

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries

(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to

its products and services at any time and to discontinue any product or services without notice. Part numbers

designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards

to product discontinuance and process change notification. All products are sold subject to IR’s terms and

conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in

accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR

deems necessary to support this warranty. Except where mandated by government requirements, testing of all

parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for

their products and applications using IR components. To minimize the risks with customer products and

applications, customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without

alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction

of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable

for such altered documentation. Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that

product or service voids all express and any implied warranties for the associated IR product or service and is

an unfair and deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical

implantintothebody,orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhich

the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer

purchaseoruseIRproductsforanysuchunintendedorunauthorizedapplication, Buyershallindemnifyandhold

International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all

claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any

claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges

that IR was negligent regarding the design or manufacture of the product.

IR products are neither designed nor intended for use in military/aerospace applications or environments unless

the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products

designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such

use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are

solely responsible for compliance with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the

specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number

including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products

in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245

Tel: (310) 252-7105

www.irf.com

AUIRLR3410 [INFINEON]

相关型号：

AUIRLR3410TR

AUIRLR3410TRL

AUIRLR3636

AUIRLR3636TR

AUIRLR3636TRL

AUIRLR3636TRR

AUIRLR3705Z

AUIRLR3705ZTR

AUIRLR3705ZTRL

AUIRLR3705ZTRR

AUIRLR3915

AUIRLR3915TR