AUIRLR2905ZTR [INFINEON]
Specifically designed for Automotive applications; 专为汽车应用型号: | AUIRLR2905ZTR |
厂家: | Infineon |
描述: | Specifically designed for Automotive applications |
文件: | 总13页 (文件大小:278K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97583
AUTOMOTIVE GRADE
AUIRLR2905Z
Features
HEXFET® Power MOSFET
●
●
●
●
●
●
●
●
Logic Level
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
D
V(BR)DSS
55V
13.5mΩ
60A
RDS(on) max.
ID (Silicon Limited)
ID (Package Limited)
G
S
42A
Automotive Qualified *
Description
D
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
S
G
D-Pak
AUIRLR2905Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Max.
60
Units
I
I
I
I
@ T = 25°C
C
D
D
D
@ T = 100°C
C
43
A
@ T = 25°C
C
42
240
110
DM
P
@T = 25°C
Power Dissipation
C
W
D
Linear Derating Factor
0.72
± 16
W/°C
V
V
Gate-to-Source Voltage
GS
EAS
57
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested )
85
IAR
See Fig.12a, 12b, 15, 16
A
EAR
mJ
Repetitive Avalanche Energy
T
J
-55 to + 175
Operating Junction and
T
°C
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
300
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.38
40
Units
Rθ
JC
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Rθ
Rθ
°C/W
JA
JA
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/28/2010
AUIRLR2905Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
mΩ
mΩ
Static Drain-to-Source On-Resistance
–––
–––
–––
1.0
11
13.5
20
VGS = 10V, ID = 36A
VGS = 5.0V, ID = 30A
VGS = 4.5V, ID = 15A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 36A
–––
–––
–––
–––
–––
–––
–––
–––
22.5
3.0
VGS(th)
Gate Threshold Voltage
V
S
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
25
–––
20
–––
–––
–––
–––
µA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 16V
250
200
-200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
23
8.5
12
35
ID = 36A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
nC VDS = 44V
VGS = 5.0V
14
VDD = 28V
ID = 36A
130
24
td(off)
tf
Turn-Off Delay Time
Fall Time
ns RG = 15 Ω
VGS = 5.0V
33
LD
D
S
Internal Drain Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
––– 1570 –––
VGS = 0V
Coss
Output Capacitance
–––
–––
–––
–––
–––
230
130
840
180
290
–––
–––
–––
–––
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
pF ƒ = 1.0MHz
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
42
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
240
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
22
1.3
33
21
V
T = 25°C, I = 36A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 36A, VDD = 28V
J F
rr
di/dt = 100A/µs
Q
t
14
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.089mH
RG = 25Ω, IAS = 36A, VGS =10V. Part not
This value determined from sample failure population,
starting TJ = 25°C, L = 0.089mH, RG = 25Ω, IAS = 36A,
VGS =10V.
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
80% VDSS
.
2
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AUIRLR2905Z
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
D-PAK
MSL1
Class M2 (200V)
Machine Model
AEC-Q101-002
Class H1B (1000V)
AEC-Q101-001
Class C5 (1125V)
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRLR2905Z
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
BOTTOM
BOTTOM
3.0V
≤
≤
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
3.0V
1
1
1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
60
T
J
= 25°C
T
= 175°C
= 25°C
J
J
50
40
30
20
10
0
100.0
10.0
1.0
T
= 175°C
T
J
V
= 10V
DS
≤ 60µs PULSE WIDTH
V
= 8.0V
DS
380µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10.0
0
10
20
30
40
50
V
, Gate-to-Source Voltage (V)
GS
I
Drain-to-Source Current (A)
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
4
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AUIRLR2905Z
2500
2000
1500
1000
500
12
10
8
V
= 0V,
= C
f = 1 MHZ
GS
I = 36A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
V
= 44V
= C
DS
rss
oss
gd
VDS= 28V
VDS= 11V
= C + C
ds
gd
Ciss
6
4
2
Coss
Crss
0
0
0
10
Q
20
30
40
50
1
10
, Drain-to-Source Voltage (V)
100
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
T
= 175°C
J
100µsec
T
= 25°C
J
1msec
1
Tc = 25°C
Tj = 175°C
10msec
V
= 0V
GS
Single Pulse
0.1
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
2.2
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ance
Forward Voltage
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5
AUIRLR2905Z
60
2.0
1.5
1.0
0.5
LIMITED BY PACKAGE
I
= 30A
D
V
= 5.0V
50
40
30
20
10
0
GS
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
0.1
Ri (°C/W) τi (sec)
0.05
τ
J τJ
τ
0.765
0.000269
τ
Cτ
0.02
0.01
1 τ1
Ci= τi/Ri
τ
2τ2
0.6141
0.001614
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRLR2905Z
15V
240
200
160
120
80
I
D
TOP
36A
6.2A
DRIVER
+
L
V
DS
BOTTOM 4.3A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
40
V
(BR)DSS
0
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
3.0
V
G
2.5
2.0
1.5
1.0
Charge
Fig 13a. Basic Gate Charge Waveform
I
= 250µA
D
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
V
GS
T
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRLR2905Z
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
60
50
40
30
20
10
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
TOP
BOTTOM 1% Duty Cycle
= 36A
Single Pulse
I
D
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
175
tav = Average time in avalanche.
0
25
50
75
100
125
150
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRLR2905Z
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRLR2905Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
PartNumber
AULR2905Z
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRLR2905Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11
AUIRLR2905Z
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
AUIRLR2905Z
Dpak
AUIRLR2905Z
AUIRLR2905ZTR
AUIRLR2905ZTRL
AUIRLR2905ZTRR
12
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AUIRLR2905Z
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time
of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to
support this warranty. Except where mandated by government requirements, testing of all parameters of each product
is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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13
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