AUIRLR2908 [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | AUIRLR2908 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总13页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97734
AUTOMOTIVEGRADE
AUIRLR2908
Features
HEXFET® Power MOSFET
l AdvancedPlanarTechnology
l Logic-LevelGateDrive
l LowOn-Resistance
l 175°COperatingTemperature
l Fast Switching
D
V(BR)DSS
80V
RDS(on) typ.
max
ID (Silicon Limited)
22.5m
28m
39A
G
l FullyAvalancheRated
l RepetitiveAvalancheAllowed
up to Tjmax
S
ID (Package Limited)
30A
l Lead-Free,RoHSCompliant
l AutomotiveQualified*
D
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
S
G
D-Pak
AUIRLR2908
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
39
Parameter
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
@ T = 25°C
C
I
I
I
I
D
D
D
28
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
A
@ T = 100°C
C
30
@ T = 25°C
C
150
DM
120
0.77
± 16
P
@T = 25°C Power Dissipation
W
W/°C
V
D
C
Linear Derating Factor
Gate-to-Source Voltage
V
GS
EAS
AS (tested )
180
250
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
E
IAR
See Fig. 12a, 12b, 15, 16
A
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
2.3
V/ns
-55 to + 175
T
T
J
Storage Temperature Range
°C
STG
300
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.3
Units
RJC
RJA
RJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
40
°C/W
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/17/11
AUIRLR2908
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
80 ––– –––
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.085 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.0
22.5
25
28
30
VGS = 10V, ID = 23A
GS = 4.5V, ID = 20A
VDS = VGS, ID = 250μA
DS = 25V, ID = 23A
m
V
VGS(th)
Gate Threshold Voltage
–––
–––
–––
–––
–––
2.5
–––
20
V
S
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
35
V
–––
–––
–––
–––
μA VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 16V
250
200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
22
6.0
11
12
95
36
55
4.5
33
9.1
17
ID = 23A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 64V
V
V
GS = 4.5V
DD = 40V
–––
–––
–––
–––
–––
ID = 23A
ns RG = 8.3
VGS = 4.5V
td(off)
tf
Turn-Off Delay Time
Fall Time
LD
D
S
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
––– 1890 –––
VGS = 0V
Coss
Output Capacitance
–––
–––
260
35
–––
–––
pF VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
––– 1920 –––
Coss
Output Capacitance
Effective Output Capacitance
–––
–––
170
310
–––
–––
V
V
GS = 0V, VDS = 64V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 64V
Coss eff.
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
I
Continuous Source Current
–––
–––
MOSFET symbol
39
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
–––
150
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
75
1.3
110
310
V
T = 25°C, I = 23A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 23A, VDD = 25V
J F
rr
di/dt = 100A/μs
Q
t
210
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.71mH, RG = 25, IAS = 23A, VGS =10V. Part not recommended for use above
this value.
ISD 23A, di/dt 400A/μs, VDD V(BR)DSS, TJ 175°C.
Pulse width 1.0ms; duty cycle 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting TJ = 25°C, L = 0.71mH, RG = 25, IAS = 23A,
VGS =10V.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.
R is measured at TJ of approximately 90°C.
2
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AUIRLR2908
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D-Pak
MSL1
Class M3 (+/- 400V) †††
Moisture Sensitivity Level
Machine Model
AEC-Q101-002
Class H1C (+/- 1500V) †††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V) †††
AEC-Q101-005
Yes
Charged Device Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRLR2908
1000
100
10
1000
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
TOP
TOP
100
10
BOTTOM
BOTTOM
2.5V
2.5V
1
1
0.1
0.01
20μs PULSE WIDTH
Tj = 175°C
20μs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
60
T
= 25°C
J
50
40
30
20
10
0
100
10
1
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
V
= 25V
DS
20μs PULSE WIDTH
VDS = 10V
20μs PULSE WIDTH
2
3
4
5
0
10
20
30
40
50
60
V
, Gate-to-Source Voltage (V)
GS
I , Drain-to-Source Current (A)
D
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRLR2908
5.0
4.0
3.0
2.0
1.0
0.0
100000
10000
1000
100
V
= 0V,
f = 1 MHZ
GS
I = 23A
D
C
= C + C , C SHORTED
V
V
V
= 64V
= 40V
= 16V
iss
gs gd ds
DS
DS
DS
C
= C
rss
gd
C
= C + C
ds gd
oss
C
C
iss
oss
rss
C
10
0
5
10
15
20
25
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
V
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000.00
100.00
10.00
1.00
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100μsec
1msec
T
= 25°C
J
1
10msec
Tc = 25°C
Tj = 175°C
V
= 0V
Single Pulse
GS
0.1
0.10
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRLR2908
40
35
30
25
20
15
10
5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 38A
D
V
= 4.5V
GS
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
, Junction Temperature (°C)
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Normalized On-Resistance
Case Temperature
vs. Temperature
10
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
0.01
0.001
1
SINGLE PULSE
( THERMAL RESPONSE )
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRLR2908
15V
400
300
200
100
0
I
D
TOP
9.3A
16A
BOTTOM 23A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
VGS
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
2.5
2.0
1.5
1.0
0.5
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
I
= 250μA
D
Current Regulator
Same Type as D.U.T.
50K
.2F
12V
.3F
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175 200
V
GS
T
, Temperature ( °C )
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRLR2908
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
0.01
assuming
Tj = 25°C due to
avalanche losses
10
0.05
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
tav (sec)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
Fig 15. Typical Avalanche Current vs.Pulsewidth
200
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 23A
Single Pulse
I
D
150
100
50
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
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AUIRLR2908
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth µs
Duty Factor
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRLR2908
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
PartNumber
AULR2908
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRLR2908
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRLR2908
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
AUIRLR2908
Dpak
AUIRLR2908
AUIRLR2908TR
AUIRLR2908TRL
AUIRLR2908TRR
12
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AUIRLR2908
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-
tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall
indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distribu-
tors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by
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such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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