AUIRLR2703TRR [INFINEON]
Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3;
| 型号： | AUIRLR2703TRR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件： | 总12页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97620
AUTOMOTIVEGRADE
AUIRLR2703
HEXFET® Power MOSFET
• AdvancedPlanarTechnology
• Logic-LevelGateDrive
• LowOn-Resistance
• Dynamic dV/dT Rating
• 175°COperatingTemperature
• Fast Switching
D
S
V(BR)DSS
30V
45m
RDS(on) max.
Ω
G
ID (Silicon Limited)
ID (Package Limited)
23A
20A
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free,RoHSCompliant
• AutomotiveQualified*
D
Description
S
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
D-Pak
AUIRLR2703
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
23
Parameter
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
@ T = 25°C
C
I
I
I
I
D
D
D
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
16
A
@ T = 100°C
C
20
@ T = 25°C
C
96
DM
45
P
@T = 25°C Power Dissipation
W
W/°C
V
D
C
0.30
± 16
Linear Derating Factor
Gate-to-Source Voltage
V
GS
EAS
77
200
14
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (tested )
IAR
A
EAR
4.5
5.0
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
dv/dt
V/ns
-55 to + 175
Operating Junction and
T
T
J
Storage Temperature Range
°C
STG
300
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
3.3
Units
RθJC
RθJA
RθJA
Junction-to-Case
–––
–––
–––
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
50
°C/W
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/11/2011
AUIRLR2703
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
V(BR)DSS
30
–––
–––
V
Reference to 25°C, ID = 1mA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.030 ––– V/°C
V
V
GS = 10V, ID = 14A
GS = 4.5V, ID = 12A
–––
–––
1.0
––– 0.045
––– 0.065
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VDS = VGS, ID = 250µA
VDS = 25V, ID = 14A
VDS = 30V, VGS = 0V
VGS(th)
gfs
Gate Threshold Voltage
–––
–––
–––
–––
–––
–––
–––
25
Forward Transconductance
Drain-to-Source Leakage Current
6.4
S
IDSS
–––
–––
–––
–––
µA
V
V
V
DS = 24V, VGS = 0V, TJ = 150°C
GS = 16V
250
100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
GS = -16V
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Min. Typ. Max. Units
ID = 14A
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.5
140
12
15
VDS = 24V
VGS = 4.5V
VDD = 15V
ID = 14A
4.6
nC
9.3
–––
–––
–––
–––
–––
RG = 12Ω
VGS = 4.5V, RD = 1.1Ω
Between lead,
td(off)
tf
Turn-Off Delay Time
Fall Time
ns
20
D
S
LD
Internal Drain Inductance
4.5
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
VDS = 25V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
450
210
110
–––
–––
–––
pF ƒ = 1.0MHz
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
D
S
23
I
Continuous Source Current
(Body Diode)
–––
–––
MOSFET symbol
S
A
showing the
G
I
Pulsed Source Current
(Body Diode)
–––
–––
96
integral reverse
SM
p-n junction diode.
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
65
1.3
97
V
T = 25°C, I = 14A, V = 0V
GS
SD
J
S
t
ns T = 25°C, I = 14A
J F
rr
di/dt = 100A/µs
Q
140
210
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
t
on
Notes:
ꢀ Caculated continuous current based on maximum allowable
junction temperature. Package limitation current = 20A.
This is applied for I-PAK, LS of D-PAK is measured
between lead and center of die contact.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L =570µH
RG = 25Ω, IAS = 14A. (See Figure 12)
ISD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
Uses IRL2703 data and test conditions.
,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
www.irf.com
AUIRLR2703
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
D-PAK
MSL1
Class M2 (+/- 150V)†††
Machine Model
AEC-Q101-002
Class H1A (+/- 500V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)†††
AEC-Q101-005
Charged Device
Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
www.irf.com
3
AUIRLR2703
1000
1000
100
10
VGS
VGS
15V
TOP
15V
TOP
12V
10V
8.0V
6.0V
4.0V
3.0V
12V
10V
8.0V
6.0V
4.0V
3.0V
100
10
1
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
1
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 25°C
T
= 175°C
J
J
0.1
0.1
0.1
0.1
A
A
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
23A
100
2.0
I
= 24A
D
TJ= 25°C
TJ = 175°C
1.5
1.0
0.5
0.0
10
1
V DS= 15V
20µs PULSE WIDTH
V
= 10V
GS
0.1
10 A
A
2
3
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
www.irf.com
AUIRLR2703
15
12
9
1000
800
600
400
200
0
I
= 14A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 24V
= 15V
gs
gd
gd
ds
DS
DS
= C
= C + C
ds
gd
C
C
iss
oss
6
C
rss
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
4
8
12
16
20
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 175°C
J
10µs
T = 25°C
J
100µs
1ms
T
T
= 25°C
= 175°C
C
J
10ms
V
= 0V
GS
Single Pulse
A
1
A
100
0.4
0.8
1.2
1.6
2.0
2.4
1
10
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
www.irf.com
5
AUIRLR2703
RD
VDS
25
VGS
LIMITED BY PACKAGE
D.U.T.
RG
+VDD
20
15
10
5
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
0.02
0.01
DM
0.1
t
SINGLE PULSE
1
t
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
C
DM
thJC
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
AUIRLR2703
160
120
80
40
0
I
D
TOP
5.7A
9.9A
BOTTOM 14A
15V
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 15V
50
DD
A
175
25
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
AUIRLR2703
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
D.U.T
• Low Stray Inductance
+
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
+
-
+
-
RG
• dv/dt controlled by RG
VDD
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
*
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
8
www.irf.com
AUIRLR2703
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
PartNumber
AULR2703
DateCode
Y= Year
WW= Work Week
A=Automotive
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRLR2703
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRLR2703
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
AUIRLR2703
Dpak
AUIRLR2703
AUIRLR2703TR
AUIRLR2703TRL
AUIRLR2703TRR
www.irf.com
11
AUIRLR2703
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reservetherighttomakecorrections, modifications, enhancements, improvements, andotherchangestoitsproducts
andservicesatanytimeandtodiscontinueanyproductorserviceswithoutnotice.Partnumbersdesignatedwiththe“AU”
prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and
processchangenotification.AllproductsaresoldsubjecttoIR’stermsandconditionsofsalesuppliedatthetimeoforder
acknowledgment.
IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewith
IR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessarytosupport
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarilyperformed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
productsandapplicationsusingIRcomponents.Tominimizetheriskswithcustomerproductsandapplications,customers
shouldprovideadequatedesignandoperatingsafeguards.
ReproductionofIRinformationinIRdatabooksordatasheetsispermissibleonlyifreproductioniswithoutalterationand
isaccompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformationwith
alterationsisanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation.
Informationofthirdpartiesmaybesubjecttoadditionalrestrictions.
ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproduct
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IRproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantinto
thebody, orinotherapplicationsintendedtosupportorsustainlife, orinanyotherapplicationinwhichthefailureofthe
IRproductcouldcreateasituationwherepersonalinjuryordeathmayoccur. ShouldBuyerpurchaseoruseIRproducts
foranysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdInternationalRectifieranditsofficers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonableattorneyfeesarisingoutof, directlyorindirectly, anyclaimofpersonalinjuryordeathassociatedwithsuch
unintendedorunauthorizeduse,evenifsuchclaimallegesthatIRwasnegligentregardingthedesignormanufactureof
theproduct.
IRproductsareneitherdesignednorintendedforuseinmilitary/aerospaceapplicationsorenvironmentsunlesstheIR
products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as
military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR
hasnotdesignatedasmilitary-gradeissolelyattheBuyer’srisk,andthattheyaresolelyresponsibleforcompliancewith
alllegalandregulatoryrequirementsinconnectionwithsuchuse.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation“AU”. Buyersacknowledgeandagreethat,iftheyuseanynon-designatedproductsinautomotiveapplications,
IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
12
www.irf.com
相关型号：
AUIRLR2905
Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2
INFINEON
AUIRLR2905TRR
Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2
INFINEON
©2020 ICPDF网 联系我们和版权申明