AUIRLR2905TRL_技术文档

AUIRLR2905

AUIRLU2905

HEXFET^®Power MOSFET

AUTOMOTIVE GRADE

• Advanced Planar Technology

• Logic-Level Gate Drive

• Low On-Resistance

• Dynamic dV/dT Rating

• 175°C Operating Temperature

• Fast Switching

D

S

V_(BR)DSS

R_DS(on)max.

I_D

55V

27m



G

42A

• Fully Avalanche Rated

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free, RoHS Compliant

• Automotive Qualified

D

S

Description

D

G

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

D-Pak

I-Pak

AUIRLU2905

AUIRLRU2905

G

Gate

D

S

Drain

Source

Base part number Package Type

Standard Pack

Complete Part Number

Form

Tube

Tape and Reel

Quantity

75

2000

3000

75

AUIRLR2905

Dpak

AUIRLR2905

AUIRLR2905TR

AUIRLR2905TRL

AUIRLR2905TRR

AUIRLU2905

Tape and Reel Left

Tape and Reel Right

Tube

AUIRLU2905

Ipak

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

42

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Units

I

@ T = 25°C

C

D

30

A

@ T = 100°C

D

C

160

DM

Power Dissipation

110

0.71

± 16

W

W/°C

V

P

@T = 25°C

C

D

Linear Derating Factor

Gate-to-Source Voltage

V

GS

210

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

mJ

200

E_AS(tested )

25

11

I_AR

A

E_AR

Repetitive Avalanche Energy

mJ

Operating Junction and

-55 to + 175

T

J

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

June 5, 2012 PD-97623A

1

AUIRLR/U2905

Thermal Resistance

Parameter

Typ.

–––

Max.

1.4

Units

R_

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

JC

JA

50

°C/W

110

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

55 ––– ––– V_GS= 0V, I_D= 250μA

V



V_(BR)DSS/ T_JBreakdown Voltage Temp. Coefficient ––– 0.070 ––– V/°C Reference to 25°C, I_D= 1mA

–––

Static Drain-to-Source On-Resistance –––

–––

––– 0.027

––– 0.030

––– 0.040

V_GS= 10V, I_D= 25A



R_DS(on)

V_GS= 5.0V, I_D= 25A

V_GS= 4.0V, I_D= 21A

V_DS= V_GS, I_D= 250μA

V_DS= 25V, I_D= 25A

V_GS(th)

gfs

Gate Threshold Voltage

1.0

21

–––

2.0

–––

25

V

S

Forward Transconductance

Drain-to-Source Leakage Current

I_DSS

–––

μA V_DS= 55V, V_GS= 0V

250

100

V_DS= 44V, V_GS= 0V, T_J= 150°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

nA V_GS= 16V

––– -100

V_GS= -16V

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge

Q_g

Q_gs

Q_gd

t_d(on)

t_r

–––

11

48

I_D= 25A

nC V_DS= 44V

V_GS= 5.0V

V_DD= 28V

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

8.6

25

–––

84

I_D= 25A



ns R_G= 3.4

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

26



15

V_GS= 5.0V, R_D= 1.1

D

S

L_D

Internal Drain Inductance

4.5

Between lead,

nH 6mm (0.25in.)

from package

G

L_S

Internal Source Inductance

–––

7.5

–––

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 1700 –––

Output Capacitance

–––

400

150

–––

V_DS= 25V

Reverse Transfer Capacitance

pF ƒ = 1.0MHz, See Fig. 5

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

S

I

S

Continuous Source Current

–––

42

160

1.3

(Body Diode)

A

showing the

integral reverse

G

I

Pulsed Source Current

–––

SM

(Body Diode)

p-n junction diode.

T = 25°C, I = 25A, V = 0V

J S GS

V

SD

Diode Forward Voltage

–––

5.0

80

V

––– V/ns T = 175°C, I = 25A, V = 55V

dv/dt

Peak Diode Recovery

J

S

DS

t

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

120

320

ns T = 25°C, I = 25A

J F

rr

di/dt = 100A/μs

Q

t

210

nC

rr

Intrinsicturn-ontimeis negligible(turn-onis dominatedbyL_S+L _D)

on

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V_DD= 25V, starting T_J= 25°C, L =470μH

R_G= 25, I_AS= 25A. (See Figure 12)

ꢀ When mounted on 1" square PCB (FR-4 or G-10

Material ). For recommended footprint and soldering

techniques refer to application note #AN-994.

R is measured at Tj approximately 90°C.



I_SD 25A, di/dt  270A/μs, V_DD V_(BR)DSS

T_J 175°C

,

Pulse width 300μs; duty cycle  2%.

June 6, 2012

2

AUIRLR/U2905

1000

100

10

1000

100

10

VGS

15V

VGS

15V

TOP

12V

10V

8.0V

6.0V

4.0V

3.0V

12V

10V

8.0V

6.0V

4.0V

3.0V

BOTTOM 2.5V

2.5V

20μs PULSE WIDTH

T

= 25°C

T

= 175°C

J

1

0.1

1

0.1

A

1

10

100

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

3.0

1000

I

= 41A

D

2.5

2.0

1.5

1.0

0.5

0.0

T_J= 25°C

100

10

1

T_J= 175°C

V _DS= 25V

20μs PULSE WIDTH

V

= 10V

GS

A

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

T , Junction Temperature (°C)

V_GS, Gate-to-Source Voltage (V)

J

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

3

June 6, 2012

AUIRLR/U2905

2800

2400

2000

1600

1200

800

15

12

9

I

= 25A

V

C

= 0V,

f = 1MHz

D

GS

iss

rss

oss

= C + C

,

C

SHORTED

V

= 44V

= 28V

gs

gd

ds

DS

= C

gd

= C + C

ds

gd

C

iss

C

oss

6

C

rss

3

400

FOR TEST CIRCUIT

SEE FIGURE 13

0

A

1

10

100

0

10

20

30

40

50

60

70

V

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

DS

G

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

10

1000

100

10

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10μs

100μs

T = 175°C

J

1ms

T = 25°C

J

10ms

T

= 25°C

C

J

= 175°C

Single Pulse

V

= 0V

GS

A

1

A

100

0.4

0.8

1.2

1.6

2.0

2.4

1

10

V

, Drain-to-Source Voltage (V)

V

, Source-to-Drain Voltage (V)

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

June 6, 2012

4

AUIRLR/U2905

R_D

V_DS

50

40

30

20

10

0

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

-

5V

Pulse Width µs

Duty Factor 

Fig 10a. Switching Time Test Circuit

V

DS

90%

25

50

75

100

125

150

175

°

T , Case Temperature ( C)

C

10%

V

GS

t

r

t

f

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

10

1

D = 0.50

0.20

0.10

0.05

P

2

DM

0.1

t

1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

t

2

Notes:

1. Duty factor D =

t / t

1

2. Peak T =P

x Z

+ T

thJC C

J

DM

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

5

June 6, 2012

AUIRLR/U2905

500

400

300

200

100

0

I

D

TOP

10A

17A

BOTTOM 25A

15V

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

20V

0.01



t

p

Fig 12a. Unclamped Inductive Test Circuit

V

= 25V

50

DD

A

175

25

75

100

125

150

Starting T , Junction Temperature (°C)

J

V

(BR)DSS

t

p

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50K

.2F

12V

.3F

Q

G

+

10 V

V

DS

D.U.T.

-

Q

GD

GS

V

GS

V

G

3mA

I

D

G

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

June 6, 2012

6

AUIRLR/U2905

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

 Low Stray Inductance

Ground Plane

Low Leakage Inductance

Current Transformer

D.U.T

+

-

+

-

+

-

+

-

R_G

dv/dt controlled by R_G

V_DD

Driver same type as D.U.T.

I_SDcontrolled by Duty Factor "D"

D.U.T. - Device Under Test

Driver Gate Drive

P.W.

Period

D =

*

V

=10V

GS

D.U.T. I Waveform

SD

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

I

SD

Ripple  5%

* V_GS= 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

7

June 6, 2012

AUIRLR/U2905

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak Part Marking Information

Part Number

AULR2905

Date Code

Y= Year

WW= Work Week

A= Automotive

IR Logo

YWWA

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

June 6, 2012

8

AUIRLR/U2905

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

9

June 6, 2012

AUIRLR/U2905

Automotive

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification. IR’s

Industrial and Consumer qualification level is granted by extension of the higher

Automotive level.

D-PAK

I-PAK

MSL1

Moisture Sensitivity Level

Class M4 (+/- 425V)^††

Machine Model

AEC-Q101-002

Class H1B (+/- 1000V)^††

AEC-Q101-001

Human Body Model

ESD

Class C5 (+/- 1125V)^††

AEC-Q101-005

Charged Device Model

RoHS Compliant

Yes

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Highest passing voltage.

June 6, 2012

10

AUIRLR/U2905

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)

reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its

productsandservicesatanytimeandtodiscontinueanyproductorserviceswithoutnotice. Partnumbersdesignated

with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product

discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale

supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance

with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary

to support this warranty. Except where mandated by government requirements, testing of all parameters of each

product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their

products and applications using IR components. To minimize the risks with customer products and applications,

customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration

and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this

informationwithalterationsisanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltered

documentation. Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that

productorservicevoidsallexpressandanyimpliedwarrantiesfortheassociatedIRproductorserviceandisanunfair

and deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant

into the body, or in other applications intended to support or sustain life, or in any other application in which the failure

of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use

IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International

Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,

damages, andexpenses, andreasonableattorneyfeesarisingoutof, directlyorindirectly, anyclaimofpersonalinjury

or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent

regarding the design or manufacture of the product.

IR products are neither designed nor intended for use in military/aerospace applications or environments unless the

IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by

IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products

which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for

compliance with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific

IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including

the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive

applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

11

June 6, 2012


型号：	AUIRLR2905TRL
厂家：	Infineon
描述：	Advanced Planar Technology
文件：	总11页 (文件大小：243K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRLR2905TRL [INFINEON]

相关型号：

AUIRLR2905TRR

AUIRLR2905Z

AUIRLR2905ZTR

AUIRLR2905ZTRL

AUIRLR2905ZTRR

AUIRLR2908

AUIRLR2908TR

AUIRLR2908TRL

AUIRLR2908TRR

AUIRLR3105

AUIRLR3105TR

AUIRLR3105TRL