AUIRFSL8405 [INFINEON]
Advanced Process Technology New Ultra Low On-Resistance; 先进的工艺技术新的超低导通电阻型号: | AUIRFSL8405 |
厂家: | Infineon |
描述: | Advanced Process Technology New Ultra Low On-Resistance |
文件: | 总14页 (文件大小:357K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AUIRFS8405
AUIRFSL8405
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
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Advanced Process Technology
D
S
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
VDSS
40V
RDS(on) typ.
max.
1.9mΩ
2.3mΩ
G
ID
193A
(Silicon Limited)
ID
120A
(Package Limited)
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniquestoachieveextremelylowon-resistancepersilicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
inAutomotiveapplicationsandwidevarietyofotherapplications.
D
D
S
D
S
D
G
D2Pak
G
TO-262
AUIRFSL8405
AUIRFS8405
Applications
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Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
G
Gate
D
Drain
S
Source
DC-DCApplications
Base part number
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRFSL8405
AUIRFS8405
TO-262
D2Pak
Tube
Tube
50
50
AUIRFSL8405
AUIRFS8405
Tape and Reel Left
Tape and Reel Right
800
800
AUIRFS8405TRL
AUIRFS8405TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Max.
193
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
137
A
120
904
163
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
1.1
Linear Derating Factor
± 20
VGS
TJ
Gate-to-Source Voltage
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbf in (1.1N m)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com © 2013 International Rectifier
April 30, 2013
1
AUIRFS/SL8405
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
181
mJ
EAS (tested)
IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
247
See Fig. 14, 15, 24a, 24b
A
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
Max.
0.92
40
Units
°C/W
Rθ
Rθ
Junction-to-Case
JC
Junction-to-Ambient (PCB Mount)
JA
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
40 ––– –––
––– 0.026 ––– V/°C Reference to 25°C, ID = 1.0mA
Conditions
VGS = 0V, ID = 250µA
V
∆V(BR)DSS/∆TJ
RDS(on)
–––
2.2
1.9
3.0
2.3
3.9
1.0
mΩ VGS = 10V, ID = 100A
VGS(th)
V
VDS = VGS, ID = 100µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
IDSS
Drain-to-Source Leakage Current
––– –––
µA
––– ––– 150
––– ––– 100
––– ––– -100
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
VGS = -20V
–––
2.3
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Min. Typ. Max. Units
Conditions
VDS = 10V, ID = 100A
ID = 100A
gfs
Qg
100 ––– –––
––– 107 161
S
Total Gate Charge
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
–––
–––
–––
–––
29
39
68
14
–––
–––
–––
–––
VDS =20V
nC
V
GS = 10V
Qsync
ID = 100A, VDS =0V, VGS = 10V
VDD = 26V
td(on)
tr
Rise Time
––– 128 –––
ID = 100A
ns
td(off)
Turn-Off Delay Time
–––
–––
55
77
–––
–––
RG = 2.7Ω
VGS = 10V
tf
Fall Time
Ciss
Input Capacitance
––– 5193 –––
––– 754 –––
––– 519 –––
––– 878 –––
––– 1225 –––
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
pF ƒ = 1.0 MHz, See Fig. 5
Coss eff. (ER)
Coss eff. (TR)
VGS = 0V, VDS = 0V to 32V , See Fig. 11
VGS = 0V, VDS = 0V to 32V
www.irf.com © 2013 International Rectifier
April 30, 2013
2
AUIRFS/SL8405
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
––– ––– 193
A
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
––– ––– 904
S
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
–––
–––
–––
–––
–––
–––
–––
0.9
1.7
44
45
44
46
1.9
1.3
V
TJ = 25°C, IS = 100A, VGS = 0V
dv/dt
trr
––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
–––
–––
–––
–––
–––
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
ns
IF = 100A
di/dt = 100A/µs
Qrr
Reverse Recovery Charge
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.036mH, RG = 50Ω,
IAS = 100A, VGS =10V. Part not recommended for use above
this value.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
.
.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
ISD ≤ 100A, di/dt ≤ 1295A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
3
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFS/SL8405
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
V
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 175°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 100A
= 10V
D
V
GS
T
= 175°C
J
T
5
= 25°C
J
V
= 10V
DS
≤60µs PULSE WIDTH
1.0
2
3
4
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 100A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
10.0
8.0
V
V
= 32V
= 20V
= C
DS
DS
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
6.0
C
rss
4.0
2.0
100
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100 120 140
V
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com © 2013 International Rectifier
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 30, 2013
4
AUIRFS/SL8405
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
1msec
Limited by package
T
= 25°C
J
10msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
1.0
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
2.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
50
48
46
44
42
40
200
150
100
50
Id = 1.0mA
Limited By Package
0
-60 -40 -20 0 20 40 60 80 100120140160180
25
50
75
100
125
150
175
T , Temperature ( °C )
J
T
, Case Temperature (°C)
C
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
800
700
600
500
400
300
200
100
0
I
D
TOP
17A
36A
BOTTOM 100A
-5
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFS/SL8405
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.001
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τj = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
200
180
160
140
120
100
80
TOP
BOTTOM 1.0% Duty Cycle
= 100A
Single Pulse
I
D
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
60
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
40
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
20
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
25
50
75
100
125
150
175
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com © 2013 International Rectifier
April 30, 2013
6
AUIRFS/SL8405
8.0
6.0
4.0
2.0
0.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 100A
D
I
I
I
= 100µA
= 1.0mA
= 1.0A
D
D
D
T
= 125°C
J
T = 25°C
J
4
6
8
10 12 14
16 18 20
-75 -50 -25
0
25 50 75 100 125 150 175
T , Temperature ( °C )
J
V
Gate -to -Source Voltage (V)
GS,
Fig 16. On-Resistance vs. Gate Voltage
Fig 17. Threshold Voltage vs. Temperature
10
200
I = 60A
I = 60A
F
F
V
= 34V
V
= 34V
R
R
8
6
4
2
0
T = 25°C
T = 25°C
J
J
150
100
50
T = 125°C
J
T = 125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
12
10
8
200
150
100
50
I = 100A
F
I = 100A
F
V
= 34V
V
= 34V
R
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
6
4
2
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 21 - Typical Stored Charge vs. dif/dt
Fig. 20 - Typical Recovery Current vs. dif/dt
7
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFS/SL8405
60
50
40
30
20
10
0
V
V
V
V
V
= 5.5V
= 6.0V
= 7.0V
= 8.0V
=10V
GS
GS
GS
GS
GS
0
100
200
300
400
500
I , Drain Current (A)
D
Fig 22. Typical On-Resistance vs. Drain Current
www.irf.com © 2013 International Rectifier
April 30, 2013
8
AUIRFS/SL8405
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 24b. Unclamped Inductive Waveforms
Fig 24a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 25a. Switching Time Test Circuit
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
www.irf.com © 2013 International Rectifier
Fig 26b. Gate Charge Waveform
9
April 30, 2013
AUIRFS/SL8405
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
PartNumber
AUIRFS8405
DateCode
Y= Year
WW= Work Week
IRLogo
YWWA
A=Automotive,LeadFree
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2013 International Rectifier
April 30, 2013
10
AUIRFS/SL8405
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
PartNumber
AUIRFSL8405
DateCode
Y= Year
WW= Work Week
IRLogo
YWWA
A=Automotive,LeadFree
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFS/SL8405
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
www.irf.com © 2013 International Rectifier
April 30, 2013
12
AUIRFS/SL8405
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
TO-262
D2 PAK
N/A
MSL1
Class M3 (+/- 400V)††
Machine Model
AEC-Q101-002
Class H1C (+/- 2000V)††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
13
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFS/SL8405
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, orinotherapplicationsintendedtosupportorsustainlife, orinanyotherapplicationinwhichthefailureoftheIR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
feesarisingoutof, directlyorindirectly, anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,aredesigned
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledgeandagreethatanyuseofIRproductsnotcertifiedbyDLAasmilitary-grade,inapplicationsrequiringmilitarygrade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
www.irf.com © 2013 International Rectifier
April 30, 2013
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