AUIRF1324S-7PTRR [INFINEON]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET
| 型号： | AUIRF1324S-7PTRR |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总12页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96296
AUTOMOTIVE GRADE
AUIRF1324S-7P
HEXFET® Power MOSFET
Features
D
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
V(BR)DSS
24V
RDS(on) typ.
0.8m
1.0m
429A
Ω
Ω
G
max.
ID (Silicon Limited)
ID (Package Limited)
S
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
240A
Description
Specifically designed for Automotive applications, this
HEXFET®PowerMOSFETutilizesthelatestprocessing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speedandimprovedrepetitiveavalancherating.These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S
S
S
S
S
G
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
429
303
A
240
1640
PD @TC = 25°C
W
300
Maximum Power Dissipation
2.0
Linear Derating Factor
W/°C
V
VGS
± 20
230
Gate-to-Source Voltage
Single Pulse Avalanche Energy
EAS (Thermally limited)
mJ
A
Avalanche Current
IAR
See Fig. 14, 15, 22a, 22b,
Repetitive Avalanche Energy
EAR
mJ
1.6
Peak Diode Recovery
dv/dt
TJ
V/ns
-55 to + 175
Operating Junction and
TSTG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.50
40
Units
RθJC
Junction-to-Case
°C/W
Junction-to-Ambient (PCB Mount) , D2Pak
RθJA
–––
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/25/10
AUIRF1324S-7P
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
24 ––– –––
––– 0.023 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
V
/ T
∆
J
∆
(BR)DSS
RDS(on)
VGS(th)
gfs
––– 0.80 1.0
2.0 ––– 4.0
270 ––– –––
VGS = 10V, ID = 160A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 160A
m
V
S
Ω
Forward Transconductance
RG
Internal Gate Resistance
–––
3.0
–––
20
Ω
IDSS
Drain-to-Source Leakage Current
––– –––
VDS = 24V, VGS = 0V
µA
nA
––– ––– 250
––– ––– 200
––– ––– -200
VDS = 19V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Total Gate Charge
Min. Typ. Max. Units
––– 180 252
Conditions
ID = 75A
Qg
Qgs
Qgd
Qsync
td(on)
tr
Gate-to-Source Charge
–––
–––
47
58
–––
–––
VDS =12V
nC
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
VGS = 10V
––– 122 –––
––– 19 –––
––– 240 –––
–––
–––
ID = 75A, VDS =0V, VGS = 10V
VDD = 16V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
ID = 160A
R =2.7
Ω
G
VGS = 10V
ns
td(off)
tf
86
93
–––
–––
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 7700 –––
––– 3380 –––
––– 1930 –––
––– 4780 –––
––– 4970 –––
VGS = 0V
Output Capacitance
VDS = 19V
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 19V , See Fig.11
VGS = 0V, VDS = 0V to 19V
pF
Coss eff. (ER)
oss eff. (TR)
C
Diode Characteristics
Parameter
Min. Typ. Max. Units
––– –––
Conditions
MOSFET symbol
D
IS
Continuous Source Current
429
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
A
G
ISM
––– ––– 1636
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
107
110
120
140
–––
V
TJ = 25°C, IS = 160A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 20V,
IF = 160A
di/dt = 100A/µs
–––
–––
–––
–––
–––
71
74
83
92
2.0
ns
Qrr
Reverse Recovery Charge
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 240A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.(Refer to AN-1140
ISD ≤ 160A, di/dt ≤ 600A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
http://www.irf.com/technical-info/appnotes/an-1140.pdf
.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.018mH
RG = 25Ω, IAS = 160A, VGS =10V. Part not recommended for use
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
above this value.
2
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AUIRF1324S-7P
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
D2 PAK 7 Pin
MSL1
Machine Model
Class M4
AEC-Q101-002
Class H3A
AEC-Q101-001
Class C5
Human Body Model
ESD
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF1324S-7P
1000
100
10
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
100
4.5V
4.5V
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 175°C
Tj = 25°C
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 160A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
12.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 75A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
10.0
8.0
6.0
4.0
2.0
0.0
rss
oss
gd
= C + C
V
= 19V
= 12V
DS
ds
gd
V
DS
C
C
iss
oss
C
rss
1
10
, Drain-to-Source Voltage (V)
100
0
50
100
150
200
V
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRF1324S-7P
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
10msec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
DC
10
V
= 0V
GS
1.0
1
0.0
0.5
1.0
1.5
2.0
2.5
0
1
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
32
31
30
29
28
27
26
25
24
450
Id = 5mA
400
350
300
250
200
150
100
50
Limited By Package
0
-60 -40 -20 0 20 40 60 80 100120140160180
25
50
75
100
125
150
175
T
, Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs.
Case Temperature
1000
900
800
700
600
500
400
300
200
100
0
1.4
I
D
TOP
45A
80A
BOTTOM 160A
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
175
-5
0
5
10
15
20
25
Starting T , Junction Temperature (°C)
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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5
AUIRF1324S-7P
1
D = 0.50
0.1
0.01
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.05
0.02070 0.000010
τ
τ
J τJ
τ
Cτ
0.08624 0.000070
0.24491 0.001406
0.15005 0.009080
1τ1
Ci= τi/Ri
τ
0.02
0.01
τ
τ
2 τ2
3τ3
4τ4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
∆
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
∆Τ
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
6
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AUIRF1324S-7P
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
TOP
BOTTOM 1.0% Duty Cycle
= 160A
Single Pulse
I
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figure 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
D
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
EAS (AR) = PD (ave)·tav
J
Fig 15. Maximum Avalanche Energy vs. Temperature
4.5
4.0
3.5
3.0
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
2.5
2.0
1.5
1.0
-75 -50 -25
0
25 50 75 100 125 150175 200
, Temperature ( °C )
T
J
Fig 16. Threshold Voltage Vs. Temperature
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7
AUIRF1324S-7P
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
Ω
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
LD
VDS
VGS
90%
+
-
VDD
D.U.T
10%
VDS
VGS
Second Pulse Width < 1µs
Duty Factor < 0.1%
td(off)
td(on)
tf
tr
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
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AUIRF1324S-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
Part Number
AUIRF1324S-7
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF1324S-7P
D2Pak - 7 Pin Tape and Reel
10
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AUIRF1324S-7P
Ordering Information
Base part number
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRF1324S-7P
D2Pak
Tube
50
AUIRF1324S-7P
AUIRF1324S-7PTRL
AUIRF1324S-7PTRR
Tape and Reel Left
Tape and Reel Right
800
800
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11
AUIRF1324S-7P
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any
product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.
Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by
government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
usingIRcomponents. Tominimizetheriskswithcustomerproductsandapplications, customersshouldprovideadequatedesignandoperating
safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by
all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive
business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
restrictions.
ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproductorservicevoidsallexpress
and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or
liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where
personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer
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that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
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Tel: (310) 252-7105
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