AUIRF1404S [INFINEON]
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3;
| 型号： | AUIRF1404S |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件： | 总11页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUIRF1404S
AUIRF1404L
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Planar Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
VDSS
40V
RDS(on) typ.
3.5m
4.0m
162A
75A
max.
ID (Silicon Limited)
ID (Package Limited)
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
D
Description
S
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
S
D
G
G
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Base part number
AUIRF1404L
Package Type
TO-262
Orderable Part Number
Quantity
50
AUIRF1404L
AUIRF1404S
AUIRF1404STRL
Tube
Tape and Reel Left
50
800
AUIRF1404S
D2-Pak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
162
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
115
A
Continuous Drain Current, VGS @ 10V (Package Limited)
75
IDM
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
650
3.8
PD @TA = 25°C
PD @TC = 25°C
W
200
1.3
W/°C
V
mJ
A
VGS
EAS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
519
IAR
Avalanche Current
95
20
EAR
Dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
V/ns
5.0
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
0.75
Units
RJC
RJA
°C/W
Junction-to-Ambient ( PCB Mount, steady state)
40
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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2015-11-11
AUIRF1404S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
VGS = 0V, ID = 250µA
–––
2.0
3.5
4.0
4.0
VGS = 10V, ID = 95A
m
V
S
VGS(th)
–––
VDS = VGS, ID = 250µA
VDS = 25V, ID = 60A
VDS = 40 V, VGS = 0V
VDS = 32V,VGS = 0V,TJ =125°C
VGS = 20V
gfs
Forward Trans conductance
106 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
––– 160 200
ID = 95A
nC VDS = 32V
–––
–––
–––
35
42
17
–––
60
–––
VGS = 10V
VDD = 20V
ID = 95A
RG= 2.5
––– 140 –––
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
72
26
–––
–––
RD= 0.21
Between lead,
and center of die contact
LS
Internal Source Inductance
–––
7.5
–––
nH
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
––– 7360 –––
––– 1680 –––
––– 240 –––
––– 6630 –––
––– 1490 –––
––– 1540 –––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 32V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
pF
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 95A,VGS = 0V
Continuous Source Current
(Body Diode)
IS
––– ––– 162
A
––– ––– 650
Pulsed Source Current
(Body Diode)
ISM
VSD
trr
Qrr
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– –––
––– 71
1.3
110
V
ns TJ = 25°C ,IF = 95A
––– 180 270
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.12mH, RG = 25, IAS = 95A, VGS =10V. (See fig. 12)
ISD 95A, di/dt 150A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Use IRF1404 data and test conditions.
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
R is measured at TJ approximately 90°C.
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2015-11-11
AUIRF1404S/L
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 175 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
2.5
1000
159A
=
I
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
100
V
= 25V
DS
V
=10V
GS
20µs PULSE WIDTH
10
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5.0
6.0
7.0 8.0 9.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig. 4 Normalized On-Resistance
Fig. 3 Typical Transfer Characteristics
Vs. Temperature
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AUIRF1404S/L
20
16
12
8
12000
10000
8000
6000
4000
2000
0
I = 95A
D
V
= 0V,
f = 1MHz
GS
C
= C + C
C
SHORTED
iss
gs gd ,
ds
V
V
= 32V
= 20V
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
40
80
120
160
200
240
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100us
°
T = 25 C
1ms
J
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
2.0
1
1
0.4
1
10
100
0.8
1.2
1.6
2.4
V
, Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig. 7 Typical Source-to-Drain Diode
Fig 8. Maximum Safe Operating Area
2015-11-11
Forward Voltage
4
AUIRF1404S/L
200
160
120
80
LIMITED BY PACKAGE
Fig 10a. Switching Time Test Circuit
40
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
P
2
DM
0.05
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF1404S/L
15V
1200
1000
800
600
400
200
0
DRIVER
+
I
L
D
V
DS
TOP
39A
67A
BOTTOM 95A
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature
( C)
J
Fig 12c. Maximum Avalanche Energy
I
AS
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
50
48
46
44
42
40
Qgs1
Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
0
20
I
40
60
80
100
, Avalanche Current ( A)
AV
Fig 12d. Typical Drain-to-Source Voltage
Fig 13b. Gate Charge Test Circuit
Vs. Avalanche Current
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AUIRF1404S/L
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
7
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AUIRF1404S/L
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF1404S
Date Code
Y= Year
WW= Work Week
IR Logo
Lot Code
8
2015-11-11
AUIRF1404S/L
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRF1404L
Date Code
IR Logo
Y= Year
WW= Work Week
Lot Code
9
2015-11-11
AUIRF1404S/L
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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AUIRF1404S/L
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
TO-262
D2-Pak
MSL1
Moisture Sensitivity Level
Class M4 (+/- 425V) †
AEC-Q101-002
Class H2 (+/- 4000V)†
AEC-Q101-001
Class C5 (+/-1125V)†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
11/11/2015
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11
2015-11-11
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