AUIRF1404STRR [INFINEON]
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3;
| 型号： | AUIRF1404STRR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 晶体 晶体管 开关 脉冲 局域网 |
| 文件： | 总15页 (文件大小：363K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97460
AUIRF1404Z
AUIRF1404ZS
AUTOMOTIVE GRADE
AUIRF1404ZL
Features
HEXFET® Power MOSFET
Advanced Process Technology
LowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
D
V(BR)DSS
40V
RDS(on) max.
3.7m
180A
Ω
G
ID (Silicon Limited)
ID (Package Limited)
Automotive Qualified *
S
160A
Description
D
D
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating. Thesefeaturescom-
bine to make this design an extremely efficient
andreliabledeviceforuseinAutomotiveapplica-
tions and a wide variety of other applications.
D
S
S
D
D
S
D
G
G
G
D2Pak
TO-262
AUIRF1404ZL
TO-220AB
AUIRF1404Z
AUIRF1404ZS
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
180
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
120
160
710
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
IDM
PD @TC = 25°C
Power Dissipation
200
1.3
± 20
W
W/°C
V
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
VGS
EAS
330
480
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested )
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
EAR
TJ
mJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
300
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.75
Units
°C/W
RθJC
Junction-to-Case
RθCS
RθJA
RθJA
0.50
–––
–––
62
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/19/2010
AUIRF1404Z/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
2.7
–––
–––
–––
–––
–––
3.7
4.0
–––
20
VGS = 10V, ID = 75A
VGS(th)
V
V
VDS = VGS, ID = 250µA
VDS = 25V, ID = 75A
gfs
IDSS
Forward Transconductance
170
–––
–––
–––
–––
Drain-to-Source Leakage Current
µA VDS = 40V, VGS = 0V
250
200
V
DS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
VGS = -20V
––– -200
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
100
31
150
–––
–––
–––
–––
–––
–––
–––
ID = 75A
VDS = 32V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
42
VGS = 10V
VDD = 20V
ID = 75A
18
110
36
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
ns
R
G = 3.0
VGS = 10V
Between lead,
58
LD
Internal Drain Inductance
4.5
nH 6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 32V, ƒ = 1.0MHz
Ciss
Input Capacitance
––– 4340 –––
––– 1030 –––
Coss
Output Capacitance
V
Crss
Reverse Transfer Capacitance
Output Capacitance
–––
––– 3300 –––
––– 920 –––
550
–––
Coss
Coss
Output Capacitance
V
Coss eff.
Effective Output Capacitance
––– 1350 –––
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
160
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
750
integral reverse
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
28
1.3
42
51
V
T = 25°C, I = 75A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 75A, VDD = 20V
J F
rr
di/dt = 100A/µs
Q
t
34
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
This is only applied to TO-220AB pakcage.
Notes:
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.11mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
TO-220 device will have an Rth value of 0.65°C/W.
Rθ is measured at TJ approximately 90°C.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 160A. Note
that current limitations arising from heating of the device leads
may occur with some lead mounting arrangements.(Refer to AN-
from 0 to 80% VDSS
.
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
This value is determined from sample failure
population, starting TJ = 25°C, L = 0.11mH, RG
25Ω, IAS = 75A, VGS =10V.
1140) http://www.irf.com/technical-info/appnotes/an-1140.pdf
=
2
www.irf.com
AUIRF1404Z/S/L
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220AB
TO-262
N/A
N/A
Moisture Sensitivity Level
D2 PAK
MSL1
Machine Model
Class M4
AEC-Q101-002
Class H1C
AEC-Q101-001
Class C3
Human Body Model
ESD
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF1404Z/S/L
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
1
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
T
= 25°C
J
T
= 175°C
J
T
= 175°C
J
160
120
80
100
10
1
T
= 25°C
J
40
V
= 15V
V
= 15V
DS
20µs PULSE WIDTH
DS
20µs PULSE WIDTH
0
4.0
5.0
V
6.0
7.0
8.0
9.0
10.0
11.0
0
40
80
120
160
, Gate-to-Source Voltage (V)
GS
I
Drain-to-Source Current (A)
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
4
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AUIRF1404Z/S/L
8000
6000
4000
2000
0
20
16
12
8
V
C
= 0V,
f = 1 MHZ
I = 75A
D
GS
= C + C , C SHORTED
iss
gs gd ds
V
= 32V
DS
VDS= 20V
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
4
Coss
Crss
0
0
40
G
80
120
160
1
10
100
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
10
OPERATION IN THIS AREA
1000.0
100.0
10.0
1.0
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
100
1
V
= 0V
GS
0
1
10
1000
0.1
V
, Drain-toSource Voltage (V)
0.2
0.6
1.0
1.4
1.8
DS
V
, Source-toDrain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ance
Forward Voltage
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5
AUIRF1404Z/S/L
2.0
1.5
1.0
0.5
200
I
= 75A
D
Limited By Package
V
= 10V
GS
150
100
50
0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
, Junction Temperature (°C)
T
, Case Temperature (°C)
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF1404Z/S/L
15V
600
500
400
300
200
100
0
ID
31A
53A
TOP
DRIVER
+
L
BOTTOM 75A
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250µA
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
V
DS
D.U.T.
-
T
J
V
GS
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF1404Z/S/L
10000
Allowed avalanche Current vs
avalanche pulsewidth, tav
Duty Cycle = Single Pulse
1000
assuming
Tj = 25°C due to
∆
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
100
0.05
0.10
10
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
tav (sec)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
Fig 15. Typical Avalanche Current Vs.Pulsewidth
400
TOP
Single Pulse
BOTTOM 10% Duty Cycle
= 75A
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
I
D
300
200
100
0
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRF1404Z/S/L
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T
P.W.
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF1404Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
PartNumber
AUIRF1404Z
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF1404Z/S/L
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
PartNumber
AUIRF1404ZS
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF1404Z/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
PartNumber
AUIRF1404ZL
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRF1404Z/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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13
AUIRF1404Z/S/L
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tube
Quantity
50
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
TO-220
TO-262
D2Pak
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
50
50
Tube
Tape and Reel Left
Tape and Reel Right
800
800
AUIRF1404ZSTRL
AUIRF1404ZSTRR
14
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AUIRF1404Z/S/L
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsid-
iaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other
changes to its products and services at any time and to discontinue any product or services without notice.
Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
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implant into the body, or in other applications intended to support or sustain life, or in any other application
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IR products are neither designed nor intended for use in automotive applications or environments unless the
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products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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15
相关型号：
AUIRF1404ZSTRL
Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3
INFINEON
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