AUIRF1405ZS-7P [INFINEON]
Power Field-Effect Transistor,;
| 型号： | AUIRF1405ZS-7P |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总13页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUTOMOTIVEGRADE
AUIRF1405ZS-7P
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
D
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
VDSS = 55V
RDS(on) = 4.9mΩ
G
S
ID = 120A
Automotive Qualified *
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Description
This HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of this design are a 175°C
junction operating temperature, fast switching
speed and improved repetitive avalanche
rating.These features combine to make this
design an extremely efficient and reliable device
for use in a wide variety of applications.
D2Pak 7 Pin
Standard Pack
Form
Tube
Base Part Number
Package Type
Orderable Part Number
Quantity
50
800
AUIRF1405ZS-7P
AUIRF1405ZS-7TRL
AUIRF1405ZS-7P
D2Pak- 7 Pin
Tape and Reel Left
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
Thesearestressratingsonly;andfunctionaloperationofthedeviceattheseoranyotherconditionbeyondthose
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Units
150
ID @ TC = 25°C
ID @ TC = 100°C
100
A
120
I
D @ TC = 25°C
590
IDM
230
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
1.5
Linear Derating Factor
± 20
250
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
mJ
A
See Fig.12a,12b,15,16
EAR
TJ
Repetitive Avalanche Energy
mJ
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300 (1.6mm from case )
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
Max.
0.65
40
Units
Rθ
JC
°C/W
Rθ
JA
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
55
Typ.
–––
Max. Units
Conditions
V(BR)DSS
ΔΒVDSS/ΔTJ
RDS(on) SMD
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
4.9
V
VGS = 0V, ID = 250μA
–––
0.054
3.7
V/°C Reference to 25°C, ID = 1mA
mΩ
–––
2.0
VGS = 10V, ID = 88A
–––
–––
–––
–––
–––
–––
150
37
4.0
V
S
VDS = VGS, ID = 150μA
DS = 10V, ID = 88A
Forward Transconductance
gfs
108
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
V
IDSS
Drain-to-Source Leakage Current
μA VDS = 55V, VGS = 0V
250
200
-200
230
–––
–––
–––
–––
–––
–––
–––
V
DS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA VGS = 20V
VGS = -20V
Qg
Qgs
Qgd
td(on)
tr
nC ID = 88A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS = 44V
VGS = 10V
VDD = 28V
64
16
ns
Rise Time
140
170
130
4.5
ID = 88A
td(off)
tf
Turn-Off Delay Time
RG = 5.0Ω
Fall Time
VGS = 10V
LD
Internal Drain Inductance
nH Between lead,
D
S
6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
G
and center of die contact
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
5360
1310
340
–––
–––
–––
–––
–––
–––
pF VGS = 0V
VDS = 25V
Coss
Crss
Coss
Coss
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
6080
920
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Output Capacitance
C
oss eff.
Effective Output Capacitance
1700
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
IS
Continuous Source Current
–––
–––
150
MOSFET symbol
D
S
(Body Diode)
A
showing the
G
ISM
Pulsed Source Current
–––
–––
590
integral reverse
(Body Diode)
p-n junction diode.
TJ = 25°C, IS = 88A, VGS = 0V
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
63
1.3
95
V
ns
nC
TJ = 25°C, IF = 88A, VDD = 28V
Reverse Recovery Time
di/dt = 100A/μs
Qrr
Reverse Recovery Charge
160
240
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.064mH, RG = 25Ω, IAS = 88A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitiveavalancheperformance.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R is measured at TJ of approximately 90°C.
θ
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS
.
2
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60μs PULSE WIDTH
Tj = 175°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
1000
175
150
125
100
75
T = 25°C
J
100
10
1
T
= 175°C
J
T = 175°C
J
T
= 25°C
J
50
V
= 10V
DS
380μs PULSE
WIDTH
25
V
= 25V
DS
≤
60μs PULSE WIDTH
0
0.1
0
25 50
75 100 125 150 175 200
0
2
4
6
8
10 12
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
3
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AUIRF1405ZS-7P
100000
10000
1000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 88A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
V
V
= 44V
= 28V
= C
DS
DS
rss
oss
gd
= C + C
ds
gd
C
iss
6.0
C
oss
C
4.0
rss
2.0
100
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
50
100
150
200
V
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
100μsec
J
1msec
T
= 25°C
J
DC
1
10msec
100
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
V
= 0V
GS
0.01
1
1
10
1000
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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AUIRF1405ZS-7P
150
125
100
75
2.5
2.0
1.5
1.0
0.5
I
= 88A
D
V
= 10V
GS
50
25
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
1
D = 0.50
0.20
0.1
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.02
0.01
τ
J τJ
τ
τ
Cτ
0.1707
0.1923
0.2885
0.000235
0.000791
0.008193
0.01
0.001
τ
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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AUIRF1405ZS-7P
15V
1000
800
600
400
200
0
I
D
TOP
14A
23A
DRIVER
+
L
V
DS
BOTTOM 88A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.5
V
G
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Charge
Fig 13a. Basic Gate Charge Waveform
I
I
I
I
= 150μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
Current Regulator
Same Type as D.U.T.
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
V
GS
3mA
T
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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AUIRF1405ZS-7P
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
1
pulsewidth, tav, assuming ΔΤj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
300
250
200
150
100
50
TOP
BOTTOM 1% Duty Cycle
= 88A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
7
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AUIRF1405ZS-7P
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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AUIRF1405ZS-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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AUIRF1405ZS-7P
D2Pak - 7 Pin Part Marking Information
PartNumber
AUF1405ZS-7P
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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AUIRF1405ZS-7P
Qualification Information†
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
MSL1
Class M4(425V)††
(per AEC-Q101-002)
7L-D2 PAK
Machine Model
Class H1C(2000V)††
(per AEC-Q101-001)
ESD
Human Body Model
Class C5(1125V)††
(per AEC-Q101-005)
Charged Device Model
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability
†† Highest passing voltage.
11
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AUIRF1405ZS-7P
IMPORTANTNOTICE
Unlessspecificallydesignatedfortheautomotivemarket,InternationalRectifierCorporationanditssubsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
designatedwiththe“AU”prefixfollowautomotiveindustryand/orcustomerspecificrequirementswithregards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR
deemsnecessarytosupportthiswarranty. Exceptwheremandatedbygovernmentrequirements, testingofall
parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
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an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implantintothebody,orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhich
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
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claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any
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asmilitary-grade,inapplicationsrequiringmilitarygradeproducts,issolelyattheBuyer’sownriskandthatthey
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including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
12
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AUIRF1405ZS-7P
Revision History
Date
Comments
Corrected part number for TRL from "AUIRF1405ZS-7PTRL" to "AUIRF1405ZS-7TRL" on page1.
•
2/27/2015
13
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
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