AUIRF1324STRR [INFINEON]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET
| 型号： | AUIRF1324STRR |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总13页 (文件大小：473K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97483
AUIRF1324S
AUTOMOTIVE GRADE
AUIRF1324L
HEXFET® Power MOSFET
Features
Advanced Process Technology
D
S
VDSS
24V
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
RDS(on) typ.
1.3m
Ω
G
ID
340A
(Silicon Limited)
ID
195A
(Package Limited)
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switch-
ing speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
S
S
D
G
D
G
D2Pak
AUIRF1324S
TO-262
AUIRF1324L
applications.
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Max.
340
Units
240
A
195
1420
PD @TC = 25°C
300
Maximum Power Dissipation
W
W/°C
V
2.0
Linear Derating Factor
VGS
EAS
IAR
± 20
270
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
mJ
A
See Fig. 14, 15, 22a, 22b
EAR
dv/dt
TJ
Repetitive Avalanche Energy
mJ
V/ns
0.46
Peak Diode Recovery
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
°C
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.50
40
Units
°C/W
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mounted, steady-state)
–––
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/29/2010
AUIRF1324S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
24
––– –––
22 ––– mV/°C
1.3 1.65
––– 4.0
V
Reference to 25°C, I = 5.0mA
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
–––
–––
2.0
D
VGS = 10V, ID = 195A
VDS = VGS, ID = 250µA
m
Ω
V
V
DS = 10V, ID = 195A
Forward Transconductance
180 ––– –––
S
RG
Internal Gate Resistance
–––
2.3
–––
20
Ω
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
IDSS
Drain-to-Source Leakage Current
––– –––
––– ––– 250
––– ––– 200
––– ––– -200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
GS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
Symbol
Parameter
Total Gate Charge
Min. Typ. Max. Units
ID = 195A
VDS = 12V
VGS = 10V
Qg
––– 160 240
nC
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
84
49
76
17
–––
–––
–––
–––
Qgd
ID = 195A, VDS =0V, VGS = 10V
VDD = 16V
Qsync
td(on)
ns
ID = 195A
tr
––– 190 –––
––– 83 –––
R = 2.7
td(off)
Ω
Turn-Off Delay Time
Fall Time
G
VGS = 10V
VGS = 0V
tf
––– 120 –––
––– 7590 –––
––– 3440 –––
––– 1960 –––
Ciss
Input Capacitance
pF
V
DS = 24V
Coss
Output Capacitance
Reverse Transfer Capacitance
Crss
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 19V , See Fig. 11
Coss eff. (ER)
Coss eff. (TR)
Effective Output Capacitance (Energy Related) ––– 4700 –––
Effective Output Capacitance (Time Related) ––– 4490 –––
V
GS = 0V, VDS = 0V to 19V
Diode Characteristics
Conditions
Symbol
Parameter
Min. Typ. Max. Units
D
S
IS
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 195A, VGS = 0V
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
––– ––– 350
A
G
ISM
––– ––– 1420
A
VSD
trr
––– –––
1.3
–––
–––
V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 20V,
IF = 195A
–––
–––
46
71
ns
Qrr
Reverse Recovery Charge
––– 160 –––
––– 430 –––
nC
A
di/dt = 100A/µs
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
7.7
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140).
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.014mH
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 195A, di/dt ≤ 450A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
.
.
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
2
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AUIRF1324S/L
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
D2Pak
MSL1
N/A
TO-262
Machine Model
Class M4
AEC-Q101-002
Class H3A
AEC-Q101-001
Class C5
Human Body Model
ESD
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF1324S/L
10000
10000
1000
100
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
≤
TOP
TOP
1000
100
10
BOTTOM
BOTTOM
1
4.0V
4.0V
0.1
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
I
= 195A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 195A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
V
V
= 19V
= 12V
= C
DS
DS
rss
oss
gd
= C + C
ds
gd
C
C
iss
oss
6.0
C
rss
4.0
2.0
0.0
0
50
100
150
200
1
10
, Drain-to-Source Voltage (V)
100
Q
, Total Gate Charge (nC)
V
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRF1324S/L
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
Limited by
package
T
= 25°C
J
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
DC
10
1.0
1
0.0
0.5
1.0
1.5
1
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
350
300
250
200
150
100
50
32
30
28
26
24
Id = 5mA
Limited By Package
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
T , Temperature ( °C )
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1200
I
D
TOP
44A
83A
BOTTOM 195A
1000
800
600
400
200
0
-5
0
5
10
15
20
25
30
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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5
AUIRF1324S/L
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.0125
0.0822
0.2019
0.2036
0.000008
0.000078
0.001110
0.007197
τ
τ
J τJ
Cτ
τ
τ
1τ1
Ci= τi/Ri
τ
τ
0.02
0.01
2 τ2
3τ3
4τ4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
6
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AUIRF1324S/L
300
250
200
150
100
50
TOP
BOTTOM 1.0% Duty Cycle
= 195A
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
I
D
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25
50
75
100
125
150
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Starting T , Junction Temperature (°C)
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
J
Fig 15. Maximum Avalanche Energy vs. Temperature
4.5
4.0
3.5
3.0
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
2.5
2.0
1.5
1.0
-75 -50 -25
0
25 50 75 100 125 150175 200
, Temperature ( °C )
T
J
Fig 16. Threshold Voltage vs. Temperature
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7
AUIRF1324S/L
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
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AUIRF1324S/L
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF1324S
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRF1324S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
IR Logo
AUIRF1324L
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF1324S/L
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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11
AUIRF1324S/L
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
50
AUIRF1324S
D2Pak
Tube
AUIRF1324S
AUIRF1324STRL
AUIRF1324STRR
AUIRF1324L
Tape and Reel Left
Tape and Reel Right
Tube
800
800
50
AUIRF1324L
TO-262
12
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AUIRF1324S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right
to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to
discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or
customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to
IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate
design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and
deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids
all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is
not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or
in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a
situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized
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use.
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acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure
to meet such requirements.
For technical support, please contact IR’s Technical
Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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13
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