2N6800EC [INFINEON]

Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,;
2N6800EC
型号: 2N6800EC
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

文件: 总11页 (文件大小:325K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2N6800ECPBF

Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON

2N6800EPBF

Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON

2N6800LCC4

N–CHANNEL ENHANCEMENT MODE
SEME-LAB

2N6800SCC5205/019PBF

Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON

2N6800TX

Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
FAIRCHILD

2N6800TXV

Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
FAIRCHILD

2N6800U

N-CHANNEL MOSFET
MICROSEMI

2N6800_01

N–CHANNEL ENHANCE-MENT POWER MOSFET
SEME-LAB

2N6801

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-39
ETC

2N6802

N-CHANNEL MOSFET
MICROSEMI

2N6802

N–CHANNEL ENHANCEMENT
SEME-LAB

2N6802

POWER MOS FIELD-EFFECT TRANSISTORS
NJSEMI