854S057B_16 [IDT]

4:1 or 2:1 LVDS Clock Multiplexer with Internal Input Termination;
854S057B_16
型号: 854S057B_16
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

4:1 or 2:1 LVDS Clock Multiplexer with Internal Input Termination

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中文:  中文翻译
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4:1 or 2:1 LVDS Clock Multiplexer with  
Internal Input Termination  
854S057B  
Datasheet  
General Description  
Features  
The 854S057B is a 4:1 or 2:1 LVDS Clock Multiplexer which can  
operate up to 2GHz. The PCLK, nPCLK pairs can accept most  
standard differential input levels. Internal termination is provided on  
each differential input pair. The 854S057B operates using a 2.5V  
supply voltage. The fully differential architecture and low propagation  
delay make it ideal for use in high speed multiplexing applications.  
The select pins have internal pulldown resistors. Leaving one input  
unconnected (pulled to logic low by the internal resistor) will  
transform the device into a 2:1 multiplexer. The SEL1 pin is the most  
significant bit and the binary number applied to the select pins will  
select the same numbered data input (i.e., 00 selects PCLK0,  
nPCLK0).  
High speed differential multiplexer. The device can be configured  
as either a 4:1 or 2:1 multiplexer  
One LVDS output pair  
Four selectable PCLK, nPCLK inputs with internal termination  
PCLKx, nPCLKx pairs can accept the following differential  
input levels: LVPECL, LVDS, CML, SSTL  
Maximum output frequency: >2GHz  
Part-to-part skew: 200ps (maximum)  
Propagation delay: 800ps (maximum)  
Additive phase jitter, RMS: 0.065ps (typical)  
Full 2.5V power supply  
-40°C to 85°C ambient operating temperature  
Available in lead-free (RoHS 6) package  
Block Diagram  
Pin Assignment  
VT0  
V
DD  
1
2
20  
19  
VDD  
PCLK3  
PCLK0  
VT0  
50  
50  
3
4
18 VT3  
17 nPCLK3  
nPCLK0  
PCLK0  
nPCLK0  
SEL1  
SEL0  
PCLK1  
5
6
7
16  
15  
14  
Q
nQ  
PCLK2  
VT1  
VT1  
nPCLK1  
GND  
8
13 VT2  
50  
50  
9
10  
12 nPCLK2  
PCLK1  
nPCLK1  
11  
GND  
0 0  
0 1  
1 0  
1 1  
854S057B  
VT2  
Q
nQ  
20-Lead TSSOP  
4.4mm x 6.5mm x 0.925mm package body  
G Package  
50  
50  
50  
PCLK2  
nPCLK2  
Top View  
VT3  
50  
PCLK3  
nPCLK3  
Pulldown  
Pulldown  
SEL1  
SEL0  
©2016 Integrated Device Technology, Inc.  
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Revision B, February 10, 2016  
854S057B Datasheet  
Pin Description and Pin Characteristic Tables  
Table 1. Pin Descriptions  
Number  
Name  
VDD  
Type  
Description  
1, 20  
2
Power  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Power  
Input  
Input  
Input  
Output  
Input  
Input  
Input  
Power supply pins.  
PCLK0  
VT0  
Non-inverting LVPECL differential clock input. RT = 50termination to VT0.  
Termination input. For LVDS input, leave floating. RT = 50termination to VT0.  
Inverting LVPECL differential clock input. RT = 50termination to VT0.  
3
4
nPCLK0  
SEL1, SEL0  
PCLK1  
VT1  
5, 6  
7
Pulldown Clock select inputs. LVCMOS/LVTTL interface levels.  
Non-inverting LVPECL differential clock input. RT = 50termination to VT1.  
Termination input. For LVDS input, leave floating. RT = 50termination to VT1.  
Inverting LVPECL differential clock input. RT = 50termination to VT1.  
Power supply ground.  
8
9
nPCLK1  
GND  
10, 11  
12  
nPCLK2  
VT2  
Inverting LVPECL differential clock input. RT = 50termination to VT2.  
Termination input. For LVDS input, leave floating. RT = 50termination to VT2.  
Non-inverting LVPECL differential clock input. RT = 50termination to VT2.  
Differential output pair. LVDS interface levels.  
13  
14  
PCLK2  
nQ, Q  
15, 16  
17  
nPCLK3  
VT3  
Inverting LVPECL differential clock input. RT = 50termination to VT3.  
Termination input. For LVDS input, leave floating. RT = 50termination to VT3.  
Non-inverting LVPECL differential clock input. RT = 50termination to VT3.  
18  
19  
PCLK3  
NOTE: Pulldown refers to internal input resistors. See Table 2, Pin Characteristics, for typical values.  
Table 2. Pin Characteristics  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
pF  
CIN  
Input Capacitance  
2
RPULLDOWN Input Pulldown Resistor  
RT Input Termination Resistor  
50  
50  
k  
40  
60  
Function Table  
Table 3. Control Input Function Table  
Inputs  
Outputs  
SEL1  
SEL0  
PCLKx, nPCLKx  
PCLK0, nPCLK0  
PCLK1, nPCLK1  
PCLK2, nPCLK2  
PCLK3, nPCLK3  
0
0
1
1
0
1
0
1
©2016 Integrated Device Technology, Inc.  
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Revision B, February 10, 2016  
854S057B Datasheet  
Absolute Maximum Ratings  
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.  
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond  
those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect product reliability.  
Item  
Rating  
Supply Voltage, VDD  
Inputs, VI  
4.6V  
-0.5V to VDD + 0.5V  
Outputs, IO  
Continuous Current  
Surge Current  
10mA  
15mA  
Input Current, PCLK, nPCLK  
VT Current, IVT  
50mA  
100mA  
Package Thermal Impedance, JA  
Storage Temperature, TSTG  
92.1°C/W (0 mps)  
-65C to 150C  
DC Electrical Characteristics  
Table 4A. LVDS Power Supply DC Characteristics, VDD = 2.5V 5%, TA = -40°C to 85°C  
Symbol  
VDD  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
2.625  
50  
Units  
V
Power Supply Voltage  
Power Supply Current  
2.375  
2.5  
IDD  
mA  
Table 4B. LVCMOS/LVTTL DC Characteristics, VDD = 2.5V 5%, TA = -40°C to 85°C  
Symbol Parameter  
Test Conditions  
VDD = 2.5V  
Minimum  
1.7  
Typical  
Maximum  
VDD + 0.3  
0.7  
Units  
V
VIH  
VIL  
IIH  
Input High Voltage  
Input Low Voltage  
Input High Current  
Input Low Current  
VDD = 2.5V  
-0.3  
V
SEL0, SEL1  
SEL0, SEL1  
VDD = VIN = 2.625V  
VDD = 2.625V, VIN = 0V  
150  
µA  
µA  
IIL  
-10  
Table 4C. LVPECL Differential DC Characteristics, VDD = 2.5V 5%, TA = -40°C to 85°C  
Symbol Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
35  
Units  
mA  
V
IIN  
Absolute Input Current; NOTE 1  
VDD = VIN = 2.625V  
VPP  
VCMR  
Peak-to-Peak Voltage; NOTE 2  
0.15  
1.2  
Common Mode Input Voltage; NOTE 2, 3  
GND + 1.2  
VDD  
V
NOTE 1: Guaranteed by design.  
NOTE 2: VIL should not be less than -0.3V.  
NOTE 3: Common mode input voltage is defined as VIH.  
©2016 Integrated Device Technology, Inc.  
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Revision B, February 10, 2016  
854S057B Datasheet  
Table 4D. LVDS DC Characteristics, VDD = 2.5V 5%, TA = -40°C to 85°C  
Symbol  
VOD  
Parameter  
Test Conditions  
Minimum  
Typical  
325  
4
Maximum  
Units  
mV  
mV  
V
Differential Output Voltage  
VOD Magnitude Change  
Offset Voltage  
225  
425  
35  
VOD  
VOS  
1.125  
1.25  
5
1.375  
25  
VOS  
VOS Magnitude Change  
mV  
Table 5. AC Characteristics, VDD = 2.5V 5%, TA = -40°C to 85°C  
Symbol  
fMAX  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
GHz  
ps  
Output Frequency  
Propagation Delay; NOTE 1  
Part-to-Part Skew; NOTE 2, 3  
Input Skew  
>2  
tPD  
300  
800  
200  
40  
tsk(pp)  
tsk(i)  
ps  
ps  
Buffer Additive Phase Jitter, RMS;  
refer to Additive Phase Jitter Section  
622.08MHz, Integration Range:  
12kHz – 20MHz  
tjit  
0.065  
ps  
tR / tF  
Output Rise/Fall Time  
20% to 80%  
700MHz  
ƒ 1.1GHz  
ƒ 2GHz  
50  
49  
47  
43  
250  
51  
ps  
%
odc  
Output Duty Cycle  
53  
%
57  
%
MUXISOLATION MUX Isolation  
ƒ= 500MHz  
-65  
dBm  
NOTE: All parameters measured at ƒ1.9GHz unless noted otherwise.  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium  
has been reached under these conditions.  
NOTE 1: Measured from the differential input crossing point to the differential output crossing point.  
NOTE 2: Defined as skew between different devices operating at the same supply voltage, same frequency and with equal load conditions.  
Using the same type of inputs on each device, the output is measured at the differential cross point.  
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.  
©2016 Integrated Device Technology, Inc.  
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Revision B, February 10, 2016  
854S057B Datasheet  
Additive Phase Jitter  
The spectral purity in a band at a specific offset from the fundamental  
compared to the power of the fundamental is called the dBc Phase  
Noise. This value is normally expressed using a Phase noise plot  
and is most often the specified plot in many applications. Phase noise  
is defined as the ratio of the noise power present in a 1Hz band at a  
specified offset from the fundamental frequency to the power value of  
the fundamental. This ratio is expressed in decibels (dBm) or a ratio  
of the power in the 1Hz band to the power in the fundamental. When  
the required offset is specified, the phase noise is called a dBc value,  
which simply means dBm at a specified offset from the fundamental.  
By investigating jitter in the frequency domain, we get a better  
understanding of its effects on the desired application over the entire  
time record of the signal. It is mathematically possible to calculate an  
expected bit error rate given a phase noise plot.  
Offset from Carrier Frequency (Hz)  
As with most timing specifications, phase noise measurements has  
issues relating to the limitations of the equipment. Often the noise  
floor of the equipment is higher than the noise floor of the device. This  
is illustrated above. The device meets the noise floor of what is  
shown, but can actually be lower. The phase noise is dependent on  
the input source and measurement equipment.  
The source generator "Rohde & Schwarz SMA100A Low Noise  
Signal Generator as external input to an Agilent 8133A 3GHz Pulse  
Generator".  
©2016 Integrated Device Technology, Inc.  
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Revision B, February 10, 2016  
854S057B Datasheet  
Parameter Measurement Information  
V
DD  
SCOPE  
nPCLK[0:3]  
PCLK[0:3]  
GND  
Q
V
DD  
2.5V 5%  
POWER SUPPLY  
VPP  
VCMR  
Cross Points  
+
Float GND –  
nQ  
LVDS Output Load AC Test Circuit  
Differential Input Level  
Spectrum of Output Signal Q  
MUX selects active  
input clock signal  
Part 1  
nQ  
A0  
Q
MUX_ISOL = A0 – A1  
Part 2  
nQ  
MUX selects static input  
Q
A1  
tsk(pp)  
ƒ
Frequency  
(fundamental)  
MUX Isolation  
Part-to-Part Skew  
nPCLKx  
PCLKx  
nPCLKy  
PCLKy  
nQ  
nPCLK[0:3]  
PCLK[0:3]  
nQ  
Q
tPD  
Q
tPD2  
tPD1  
tsk(i)  
tsk(i) = |tPD1 - tPD2  
|
Input Skew  
Propagation Delay  
©2016 Integrated Device Technology, Inc.  
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Revision B, February 10, 2016  
854S057B Datasheet  
Parameter Measurement Information, continued  
nQ  
Q
nQ  
80%  
tF  
80%  
tR  
VOD  
20%  
20%  
Q
Output Rise/Fall Time  
Output Duty Cycle/Pulse Width/Period  
Differential Output Voltage Setup  
Offset Voltage Setup  
©2016 Integrated Device Technology, Inc.  
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Revision B, February 10, 2016  
854S057B Datasheet  
Application Information  
Recommendations for Unused Input Pins  
Inputs:  
LVCMOS Control Pins  
All control pins have internal pulldowns; additional resistance is not  
required but can be added for additional protection. A 1kresistor  
can be used.  
2.5V Differential Input with Built-In 50Termination Unused Input Handling  
To prevent oscillation and to reduce noise, it is recommended to have  
pullup and pulldown connect to true and compliment of the unused  
2.5V  
input as shown in Figure 1.  
2.5V  
R1  
680  
PCLK  
VT  
nPCLK  
Receiver  
With  
Built-In  
R2  
50Ω  
680  
Figure 1. Unused Input Handling  
©2016 Integrated Device Technology, Inc.  
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Revision B, February 10, 2016  
854S057B Datasheet  
2.5V LVPECL Input with Built-In 50Termination Interface  
The PCLK /nPCLK with built-in 50terminations accept LVDS,  
LVPECL, CML, SSTL and other differential signals. Both differential  
signals must meet the VPP and VCMR input requirements. Figures 2A  
to 2E show interface examples for the PCLK /nPCLK with built-in 50  
termination input driven by the most common driver types. The input  
interfaces suggested here are examples only. If the driver is from  
another vendor, use their termination recommendation. Please  
consult with the vendor of the driver component to confirm the driver  
termination requirements.  
2.5V  
2.5V  
2.5V  
3.3V or 2.5V  
Zo = 50Ω  
Zo = 50Ω  
Zo = 50Ω  
Zo = 50Ω  
PCLK  
PCLK  
VT  
VT  
nPCLK  
nPCLK  
Receiver  
With  
Receiver  
With  
LVPECL  
LVDS  
R1  
18Ω  
Built-In  
50Ω  
Built-In  
50Ω  
Figure 2A. PCLK/nPCLK Input with  
Figure 2B. PCLK/nPCLK Input with  
Built-In 50Driven by an LVDS Driver  
Built-In 50Driven by an LVPECL Driver  
2.5V  
2.5V  
2.5V  
2.5V  
Zo = 50Ω  
Zo = 50Ω  
PCLK  
PCLK  
VT  
VT  
Zo = 50Ω  
Zo = 50Ω  
nPCLK  
nPCLK  
Receiver  
Receiver  
With  
With  
CML - Built-in 50Ω Pull-up  
CML  
Built-In  
50Ω  
Built-In  
50Ω  
Figure 2C. PCLK/nPCLK Input with  
Built-In 50Driven by a CML Driver  
Figure 2D. PCLK/nPCLK Input with Built-In 50Driven  
by a CML Driver with Built-In 50Pullup  
2.5V  
2.5V  
Zo = 50Ω  
Zo = 50Ω  
R1  
R2  
25Ω  
25Ω  
PCLK  
VT  
nPCLK  
Receiver  
With  
SSTL  
Built-In  
50Ω  
Figure 2E. PCLK/nPCLK Input with  
Built-In 50Driven by an SSTL Driver  
©2016 Integrated Device Technology, Inc.  
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Revision B, February 10, 2016  
854S057B Datasheet  
LVDS Driver Termination  
A general LVDS interface is shown in Figure 3. Standard termination  
for LVDS type output structure requires both a 100parallel resistor  
at the receiver and a 100differential transmission line environment.  
In order to avoid any transmission line reflection issues, the 100  
resistor must be placed as close to the receiver as possible. IDT  
offers a full line of LVDS compliant devices with two types of output  
structures: current source and voltage source. The standard  
termination schematic as shown in Figure 3 can be used with either  
type of output structure. If using a non-standard termination, it is  
recommended to contact IDT and confirm if the output is a current  
source or a voltage source type structure. In addition, since these  
outputs are LVDS compatible, the input receivers amplitude and  
common mode input range should be verified for compatibility with  
the output.  
+
LVDS  
Receiver  
LVDS Driver  
100Ω  
100Ω Differential Transmission Line  
Figure 3. Typical LVDS Driver Termination  
Schematic Example  
Figure 4 shows a schematic example of the 854S057B. In this  
example, the PCLK0/nPCLK0 and PCLK1/nPCLK1 inputs are used.  
The decoupling capacitors should be physically located near the  
power pin.  
VDD  
VDD  
VDD  
LVDS  
VDD  
VDD  
U1  
R1  
680  
R3  
680  
R1  
1K  
Zo = 50  
Zo = 50  
1
2
3
4
5
6
7
8
9
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
VDD  
PCLK0  
VT0  
nPCLK0  
SEL1  
SEL0  
PCLK1  
VT1  
nPCLK1  
GND  
VDD  
PCLK3  
VT3  
nPCLK3  
+
-
Zo = 50  
Zo = 50  
Q
nQ  
PCLK2  
VT2  
nPCLK2  
GND  
R5  
100  
VDD  
10  
LVDS  
Zo = 50  
Zo = 50  
R2  
680  
R4  
680  
R1  
1K  
R6  
18  
VDD  
(U1,1)  
(U1,20)  
C2  
LVPECL  
C1  
0.1u  
0.1u  
VDD=2.5V  
Figure 4. 854S057B LVDS Schematic Example  
©2016 Integrated Device Technology, Inc.  
10  
Revision B, February 10, 2016  
854S057B Datasheet  
Power Considerations  
This section provides information on power dissipation and junction temperature for the 854S057B.  
Equations and example calculations are also provided.  
1. Power Dissipation.  
The total power dissipation for the 854S057B is the sum of the core power plus the power dissipation in the load(s).  
The following is the power dissipation for VDD = 2.5V + 5% = 2.625V, which gives worst case results.  
NOTE: Please refer to Section 3 for details on calculating power dissipation in the load.  
Power (core)MAX = VDD_MAX * IDD_MAX = 2.625V * 50mA = 131.25mW  
Power Dissipation for internal termination RT  
Power (RT)MAX = 4 * (VPP_MAX)2 / RT_MIN = (1.2V)2 / 80= 72mW  
Total Power_MAX = 131.25mW + 72mW = 203.25mW  
2. Junction Temperature.  
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad, and directly affects the reliability of the device. The  
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond  
wire and bond pad temperature remains below 125°C.  
The equation for Tj is as follows: Tj = JA * Pd_total + TA  
Tj = Junction Temperature  
JA = Junction-to-Ambient Thermal Resistance  
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)  
TA = Ambient Temperature  
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and  
a multi-layer board, the appropriate value is 92.1°C/W per Table 6 below.  
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:  
85°C + 0.203W * 92.1°C/W = 103.7°C. This is below the limit of 125°C.  
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of  
board (multi-layer).  
Table 6. Thermal Resistance JA for 20 Lead TSSOP, Forced Convection  
JA by Velocity  
Meters per Second  
0
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
92.1°C/W  
86.5°C/W  
83.0°C/W  
©2016 Integrated Device Technology, Inc.  
11  
Revision B, February 10, 2016  
854S057B Datasheet  
Reliability Information  
Table 7. JA vs. Air Flow Table for a 20 Lead TSSOP  
JA by Velocity  
Meters per Second  
0
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
92.1°C/W  
86.5°C/W  
83.0°C/W  
Transistor Count  
The transistor count for 854S057B is: 375  
This device is pin and function compatible and a suggested replacement for 854057.  
Package Outline and Package Dimensions  
Package Outline - G Suffix for 20 Lead TSSOP  
Table 8. Package Dimensions  
All Dimensions in Millimeters  
Symbol  
Minimum  
Maximum  
N
A
20  
1.20  
0.15  
1.05  
0.30  
0.20  
6.60  
A1  
A2  
b
0.05  
0.80  
0.19  
0.09  
6.40  
c
D
E
6.40 Basic  
E1  
e
4.30  
4.50  
0.65 Basic  
L
0.45  
0°  
0.75  
8°  
aaa  
0.10  
Reference Document: JEDEC Publication 95, MO-153  
©2016 Integrated Device Technology, Inc.  
12  
Revision B, February 10, 2016  
854S057B Datasheet  
Ordering Information  
Table 9. Ordering Information  
Part/Order Number  
Marking  
Package  
Shipping Packaging  
Tube  
Temperature  
-40C to 85C  
-40C to 85C  
854S057BGILF  
854S057BGILFT  
ICS54S057BIL  
ICS54S057BIL  
“Lead-Free” 20 Lead TSSOP  
“Lead-Free” 20 Lead TSSOP  
Tape & Reel  
NOTE: Parts that are ordered with an "LF" suffix to the part number are the Pb-Free configuration and are RoHS compliant.  
©2016 Integrated Device Technology, Inc.  
13  
Revision B, February 10, 2016  
854S057B Datasheet  
Revision History Sheet  
Rev  
Table  
Page  
Description of Change  
Date  
10  
11  
Updated LVDS Output Termination application note.  
Updated Power Dissipation calculation in Power Considerations Application Note.  
A
3/26/10  
A
11  
Corrected Power Dissipation calculation in the Power Considerations Application Note.  
3/29/10  
2/10/16  
1
General Description - deleted HiperClocks logo.  
B
T9  
13  
Ordering Information Table - deleted count for Tape & Reel.  
Deleted "ICS" prefix and "I" suffix in the part number throughout the datasheet.  
©2016 Integrated Device Technology, Inc.  
14  
Revision B, February 10, 2016  
Corporate Headquarters  
6024 Silver Creek Valley Road  
San Jose, CA 95138 USA  
Sales  
Tech Support  
email: clocks@idt.com  
1-800-345-7015 or 408-284-8200  
Fax: 408-284-2775  
www.IDT.com  
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