HMC330_10 [HITTITE]
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz; 砷化镓MMIC SUB-谐泵浦搅拌机， 25 - 40 GHz的
| 型号： | HMC330_10 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz |
| 文件： | 总6页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Typical Applications
The HMC330 is ideal for:
• LMDS
Features
Sub-Harmonically Pumped (x2) LO
Input IP3: 17 dBm
• Point-to-Point Radios
• SATCOM
2LO/RF Isolation: 48 dB
Small Size: 0.97 mm2
3
Functional Diagram
General Description
The HMC330 MMIC is a broadband double bal-
anced sub-harmonically pumped passive mixer
that may be used as an upconverter or downcon-
verter. The mixer requires no external matching
or bias. This design was optimized to provide
better 1dB compression performance as com-
pared to the HMC266 under the same LO drive
levels. The HMC330 provides greater than 38 dB
LO to RF and 2LO to RF isolation performance.
Measurements were made with the chip mounted
and ribbon bonded into a 50-ohm microstrip test
fixture that contains 5-mil alumina substrates
between the chip and K-connectors. Measured
data includes the parasitic effects of the assem-
bly. RF connections to the chip were made with
0.076 mm (3-mil) ribbon bond with minimal length
<0.31mm (<12 mil).
Electrical Specifications, TA = +25° C
LO = +14 dBm, IF = 2.5 GHz
Units
Parameter
Min.
Typ.
25 - 40
12.5 - 20
2 - 4
13
Max.
Frequency Range, RF
Frequency Range, LO
Frequency Range, IF
Conversion Loss
GHz
GHz
GHz
dB
17
17
Noise Figure (SSB)
2LO to RF Isolation
LO to RF Isolation
2LO to IF Isolation
RF to IF Isolation
13
dB
40
30
50
27
48
dB
38
dB
60
dB
37
dB
LO to IF Isolation
38
+13
+4
48
dB
IP3 (Input)
+17
dBm
dBm
1 dB Compression (Input)
+8
* Unless otherwise noted, all measurements performed as downconverter, IF= 2.5 GHz.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Conversion Gain vs.
Temperature @ LO = +14 dBm
Isolation @ LO = +14 dBm
0
0
-10
RF/IF
+25C
-55C
LO/RF
LO/IF
-5
-20
+85C
2LO/RF
2LO/IF
-30
-40
-50
-60
-70
-80
3
-10
-15
-20
20
25
30
35
40
40
5
20
25
30
35
40
40
40
FREQUENCY (GHz)
FREQUENCY (GHz)
Conversion Gain vs. LO Drive
Return Loss@ LO = +14 dBm
0
0
-5
-5
+12 dBm
+14 dBm
+10 dBm
-10
-15
-20
-10
LO
RF
+8 dBm
+16 dBm
35
-15
20
25
30
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
Upconverter Performance
Conversion Gain @ LO = +14 dBm
IF Bandwidth @ LO = +14 dBm
0
0
RETURN LOSS
CONVERSION GAIN
-5
-10
-15
-20
-5
-10
-15
-20
0
1
2
3
4
20
25
30
35
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 2
HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Input IP3 vs.
Temperature @ LO = +14 dBm *
Input IP3 vs. LO Drive *
30
30
+12 dBm
+14 dBm
+16 dBm
-55C
+25C
+85C
25
20
15
10
25
20
15
10
3
20
25
30
FREQUENCY (GHz)
35
40
40
40
20
25
30
FREQUENCY (GHz)
35
40
Input IP2 vs.
Temperature @ LO = +14 dBm *
Input IP2 vs. LO Drive *
95
95
-55C
+25C
+85C
+12 dBm
+14 dBm
+16 dBm
90
85
80
90
85
80
20
25
30
FREQUENCY (GHz)
35
20
25
30
35
40
FREQUENCY (GHz)
Input P1dB vs.
Temperature @ LO = +14 dBm
MxN Spurious Outputs
as a Down Converter
15
nLO
14
mRF
-3
-2
-1
0
5
4
44
75
3
61
85
2
1
0
13
12
11
10
9
+25C
-55C
+85C
71
71
35
x
5
1
61
26
8
2
7
6
3
5
RF = 30.5 GHz @ -10 dBm
LO = 14 GHz @ +14 dBm
25
30
35
FREQUENCY (GHz)
All values in dBc below IF output power level.
* Two-tone input power = -10 dBm each tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 3
HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Absolute Maximum Ratings
RF / IF Input
+13 dBm
LO Drive
+27 dBm
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
3
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/"3%26% (!.$,).' 02%#!54)/.3
Outline Drawing
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
Standard
Alternate
3. TYPICAL BOND PAD IS .004” SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
WP-8
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 4
HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
3 mil Ribbon Bond
0.076mm
(0.003”)
3
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order to
minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is
recommended to minimize inductance on RF, LO & IF ports.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
3 mil Ribbon Bond
0.076mm
(0.003”)
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD
strikes.
RF Ground Plane
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 5
HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Notes:
3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 6
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