HMC331_08 [HITTITE]

GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT; 砷化镓被动倍频, 12 - 18 GHz的输入
HMC331_08
型号: HMC331_08
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT
砷化镓被动倍频, 12 - 18 GHz的输入

输入元件
文件: 总6页 (文件大小:169K)
中文:  中文翻译
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HMC331  
v04.1007  
GaAs MMIC PASSIVE FREQUENCY  
DOUBLER, 12 - 18 GHz INPUT  
Typical Applications  
The HMC331 is suitable for:  
• Wireless Local Loop  
Features  
Conversion Loss: 14 dB  
Fo, 3Fo, 4Fo Isolation: 50 dB  
Passive: No Bias Required  
Die Size: 0.85 x 0.55 x 0.1 mm  
2
• LMDS, VSAT, and Point-to-Point Radios  
• Test Equipment  
General Description  
Functional Diagram  
The HMC331 is a passive miniature frequency  
doubler MMIC. Suppression of undesired fundamental  
and higher order harmonics is 50 dB typical with  
respect to input signal level. The doubler utilizes the  
same GaAs Schottky diode/balun technology found  
in Hittite MMIC mixers. It features small size, requires  
no DC bias, and adds no measurable additive phase  
noise onto the multiplied signal.  
Electrical Specifications, TA = +25° C, As a Function of Drive Level  
Input = +11 dBm  
Input = +13 dBm  
Input = +15 dBm  
Parameter  
Frequency Range, Input  
Frequency Range, Output  
Conversion Loss  
Min.  
Typ.  
13 - 18  
26 - 36  
15  
Max.  
Min.  
Typ.  
12 - 18  
24 - 36  
14  
Max.  
Min.  
Typ.  
12 - 18  
24 - 36  
14  
Max.  
19  
Units  
GHz  
GHz  
dB  
20  
20  
FO Isolation  
(with respect to input level)  
45  
50  
50  
50  
60  
60  
45  
45  
50  
50  
60  
60  
45  
47  
50  
50  
60  
60  
dB  
dB  
dB  
3FO Isolation  
(with respect to input level)  
4FO Isolation  
(with respect to input level)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
2 - 26  
HMC331  
v04.1007  
GaAs MMIC PASSIVE FREQUENCY  
DOUBLER, 12 - 18 GHz INPUT  
Conversion Loss vs.  
Conversion Loss  
Temperature @ +15 dBm Drive Level  
@ 25 C Vs. Drive Level  
0
0
2
+ 25 C  
-5  
-5  
+ 15 dBm  
+ 13 dBm  
+ 11 dBm  
+ 85 C  
-55 C  
-10  
-10  
-15  
-20  
-25  
-30  
-15  
-20  
-25  
12  
13  
14  
15  
16  
17  
18  
12  
13  
14  
15  
16  
17  
18  
INPUT FREQUENCY (GHz)  
FREQUENCY (GHz)  
Isolation @ +15 dBm Drive Level*  
Input Return Loss vs. Drive Level  
0
0
Fo  
3Fo  
4Fo  
-5  
-20  
-40  
-10  
-15  
-60  
+ 15 dBm  
+ 13 dBm  
-20  
+ 11 dBm  
-80  
-25  
-100  
-30  
10  
15  
20  
25  
30  
35  
40  
45  
50  
12  
13  
14  
15  
16  
17  
18  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
*With respect to input level  
Output Return Loss  
For Three Input Frequencies  
0
-6  
13 GHz In  
15 GHz In  
18 GHz In  
-12  
-18  
-24  
-30  
22  
24  
26  
28  
30  
32  
34  
36  
OUTPUT FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
2 - 27  
HMC331  
v04.1007  
GaAs MMIC PASSIVE FREQUENCY  
DOUBLER, 12 - 18 GHz INPUT  
Absolute Maximum Ratings  
Input Drive  
+27 dBm  
2
Storage Temperature  
Operating Temperature  
-65 to +150 °C  
-55 to +85 °C  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
Outline Drawing  
NOTES:  
Die Packaging Information [1]  
1. ALL DIMENSIONS ARE IN INCHES [MM]  
2. DIE THICKNESS IS .004”  
Standard  
Alternate  
3. TYPICAL BOND IS .004” SQUARE  
4. BACKSIDE METALLIZATION: GOLD  
5. BOND PAD METALLIZATION: GOLD  
6. BACKSIDE METAL IS GROUND.  
7. CONNECTION NOT REQUIRED FOR  
UNLABELED BOND PADS.  
GP-5  
[2]  
[1] Refer to the “Packaging Information” section for die  
packaging dimensions.  
[2] For alternate packaging information contact Hittite  
Microwave Corporation.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
2 - 28  
HMC331  
v04.1007  
GaAs MMIC PASSIVE FREQUENCY  
DOUBLER, 12 - 18 GHz INPUT  
Pad Description  
Pad Number  
Function  
Description  
Interface Schematic  
2
1
RFIN  
DC coupled and matched to 50 Ohm.  
2
RFOUT  
GND  
DC coupled and matched to 50 Ohm.  
Die Bottom  
Die bottom must be connected to RF/DC ground.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
2 - 29  
HMC331  
v04.1007  
GaAs MMIC PASSIVE FREQUENCY  
DOUBLER, 12 - 18 GHz INPUT  
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs  
The die should be attached directly to the ground plane eutectically or with  
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).  
0.102mm (0.004”) Thick GaAs MMIC  
2
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film  
substrates are recommended for bringing RF to and from the chip (Figure 1). If  
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be  
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface  
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick  
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then  
attached to the ground plane (Figure 2).  
Wire 3 mil Ribbon Bond  
0.076mm  
(0.003”)  
RF Ground Plane  
Microstrip substrate should be brought as close to the die as possible in order to  
minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils).  
Gold ribbon of 0.075mm ( 3 mil) width and minimal length <0.31mm ( <12 mils) is  
recommended to minimize inductance on RF ports.,  
0.127mm (0.005”) Thick Alumina  
Thin Film Substrate  
Figure 1.  
Handling Precautions  
Follow these precautions to avoid permanent damage.  
0.102mm (0.004”) Thick GaAs MMIC  
Storage: All bare die are placed in either Waffle or Gel based ESD protective  
containers, and then sealed in an ESD protective bag for shipment. Once the  
sealed ESD protective bag has been opened, all die should be stored in a dry  
nitrogen environment.  
Ribbon Bond  
0.076mm  
(0.003”)  
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean  
the chip using liquid cleaning systems.  
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.  
RF Ground Plane  
Transients: Suppress instrument and bias supply transients while bias is applied.  
Use shielded signal and bias cables to minimize inductive pick-up.  
0.150mm (0.005”) Thick  
Moly Tab  
General Handling: Handle the chip along the edges with a vacuum collet or with  
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and  
should not be touched with vacuum collet, tweezers, or fingers.  
0.254mm (0.010”) Thick Alumina  
Thin Film Substrate  
Figure 2.  
Mounting  
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mount-  
ing surface should be clean and flat.  
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of  
265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a tem-  
perature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.  
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the  
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.  
Wire Bonding  
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of  
40 - 60 grams. DC bonds of 0.001” (0.025mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made  
with a force of 40 - 50 grams and wedge bonds at 18 - 22 grams. All bonds should be made with a nominal stage temperature of 150  
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,  
less than 12 mils (0.31 mm).  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
2 - 30  
HMC331  
v04.1007  
GaAs MMIC PASSIVE FREQUENCY  
DOUBLER, 12 - 18 GHz INPUT  
Notes  
2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
2 - 31  

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