HMC331 [HITTITE]
GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT; 砷化镓被动倍频， 12 - 18 GHz的输入
| 型号： | HMC331 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT |
| 文件： | 总5页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC331
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 12 - 18 GHz INPUT
v02.1201
MICROWAVE CORPORATION
Typical Applications
Features
The HMC331 is suitable for:
• Wireless Local Loop
Conversion Loss: 14 dB
Fo, 3Fo, 4Fo Isolation: 50 dB
Passive: No Bias Required
• LMDS, VSAT, and Pt to Pt Radios
• Test Equipment
4
General Description
Functional Diagram
The HMC331 is a passive miniature frequency dou-
bler MMIC. Suppression of undesired fundamental
and higher order harmonics is 50 dB typical with
respect to input signal level. The doubler utilizes
the same GaAs Schottky diode/balun technology
found in Hittite MMIC mixers. It features small size,
requires no DC bias, and adds no measurable addi-
tive phase noise onto the multiplied signal.
Electrical Specifications, TA = +25° C, As a Function of Drive Level
Input = +11 dBm
Input = +13 dBm
Input = +15 dBm
Parameter
Frequency Range, Input
Frequency Range, Output
Conversion Loss
Min.
Typ.
13 - 18
26 - 36
15
Max.
Min.
Typ.
12 - 18
24 - 36
14
Max.
Min.
Typ.
12 - 18
24 - 36
14
Max.
Units
GHz
GHz
dB
20
20
19
FO Isolation
(with respect to input level)
45
50
50
50
60
60
45
45
50
50
60
60
45
47
50
50
60
60
dB
dB
dB
3FO Isolation
(with respect to input level)
4FO Isolation
(with respect to input level)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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HMC331
v02.1201
MICROWAVE CORPORATION
GaAs MMIC FREQUENCY
DOUBLER, 12 - 18 GHz INPUT
Conversion Loss vs.
Temperature @ +15 dBm Drive Level
Conversion Loss
@ 25 Deg C Vs. Drive Level
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
0
0
+ 25 C
-5
-10
-15
-20
-25
-30
+ 85 C
-5
- 55 C
-10
-15
-20
-25
+ 15 dBm
+ 13 dBm
+ 11 dBm
4
12
13
14
15
16
17
18
12
13
14
15
16
17
18
INPUT FREQUENCY (GHz)
FREQUENCY (GHz)
Isolation @ +15 dBm Drive Level*
Input Return Loss vs. Drive Level
0
0
Fo
3Fo
4Fo
-5
-10
-15
-20
-20
-40
-60
+ 15 dBm
+ 13 dBm
+ 11 dBm
-80
-25
-30
-100
10
15
20
25
30
35
40
45
50
12
13
14
15
16
17
18
FREQUENCY (GHz)
FREQUENCY (GHz)
*With respect to input level
Output Return Loss
For Three Input Frequencies
0
13 GHz In
15 GHz In
18 GHz In
-6
-12
-18
-24
-30
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
OUTPUT FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 23
HMC331
v02.1201
MICROWAVE CORPORATION
GaAs MMIC FREQUENCY
DOUBLER, 12 - 18 GHz INPUT
Absolute Maximum Ratings
Input Drive
+27 dBm
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
4
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 24
HMC331
v02.1201
MICROWAVE CORPORATION
GaAs MMIC FREQUENCY
DOUBLER, 12 - 18 GHz INPUT
MMIC Assembly Techniques for HMC331
Ribbon Bond
3
mil Ribbon Bond
4
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bring-
ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrate should be brought as close to the die as possible in order to minimize ribbon bond length. Typical
die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075mm ( 3 mil) width and minimal length <0.31mm (
<12 mils) is recommended to minimize inductance on RF ports.,
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 25
HMC331
v02.1201
MICROWAVE CORPORATION
GaAs MMIC FREQUENCY
DOUBLER, 12 - 18 GHz INPUT
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid clean-
ing systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
4
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent
tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet,
tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool tempera-
ture of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C.
DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically
bonded with a force of 40 - 60 grams. DC bonds of 0.001” (0.025mm) diameter, thermosonically bonded,
are recommended. Ball bonds should be made with a force of 40 - 50 grams and wedge bonds at 18 - 22
grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultra-
sonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less
than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
4 - 26
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