2SC5247ZD-TR [HITACHI]
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SMPAK-3;
| 型号： | 2SC5247ZD-TR |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SMPAK-3 晶体 小信号双极晶体管 射频小信号双极晶体管 光电二极管 放大器 |
| 文件： | 总10页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5247
Silicon NPN Epitaxial
ADE-208-281
1st. Edition
Application
VHF / UHF wide band amplifier
Features
•
•
High gain bandwidth product
fT = 13.5 GHz typ
High gain, low noise figure
PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5247
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
8
V
1.5
V
50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Note: Marking is “ZD–”.
PC
80
Tj
150
Tstg
–55 to +150
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15
—
—
V
IC = 10 µA, IE = 0
Collector cutoff current
ICBO
ICEO
IEBO
hFE
—
—
—
50
—
—
1
µA
mA
µA
VCB = 12 V, IE = 0
VCE = 8 V, RBE = ∞
VEB = 1.5 V, IC = 0
VCE = 4 V, IC = 20 mA
—
1
Emitter cutoff current
—
10
160
0.75
DC current transfer ratio
Collector output capacitance
100
0.47
Cob
pF
VCB = 5 V, IE = 0,
f = 1 MHz
Gain bandwidth product
Power gain
fT
10.5
14
13.5
17
—
—
GHz
dB
VCE = 4 V, IC = 20 mA
PG
VCE = 4 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.2
2.5
dB
VCE = 4 V, IC = 5 mA,
f = 900 MHz
2
2SC5247
DC Current Transfer Ratio vs.
Collector Current
Collector Power Dissipation Curve
200
160
120
80
160
120
80
40
40
V
CE
= 4 V
Pulse Test
0
0.1
0.01
1
10
100
0
50
100
150
200
Collector Current I (mA)
C
Ambient Temperature Ta (°C)
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1.0
20
16
12
8
V
= 4V
CE
I
= 0
E
f = 1 MHz
0.8
0.6
0.4
0.2
0
4
0
0.1 0.2 0.5
1
2
5
10 20
(V)
1
10
2
5
20
50 100
Collector Current I (mA)
Collector to Base Voltage V
C
CB
3
2SC5247
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
f = 900 MHz
20
10
8
f = 900 MHz
V
CE
= 4V
16
12
8
V
CE
= 1V
6
V
CE
= 1V
4
4
0
2
0
V
= 4V
CE
50
50
0.1 0.2 0.5
1
2
5
10 20
C
0.1 0.2 0.5
1
2
5
10 20
Collector Current I (mA)
Collector Current I (mA)
C
4
2SC5247
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
Scale: 5 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
4
150°
.2
5
10
.2
.4 .6 .8 1.0 1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–90°
–1
Ω
Ω
Condition: V = 4 V , Zo = 50
CE
Condition: V = 4 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
C
(I = 20 mA)
C
(I = 20 mA)
C
S22 Parameter vs. Frequency
S12 Parameter vs. Frequency
Scale: 0.04 / div.
1
90°
.8
1.5
.6
60°
120°
2
.4
3
30°
4
5
150°
.2
10
.2
.4 .6 .8 1.0 1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–.6
–120°
–1.5
–.8
–1
–90°
Ω
Condition: V = 4 V , Zo = 50
CE
Ω
Condition: V = 4 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
C
(I = 20 mA)
C
(I = 20 mA)
C
5
2SC5247
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
Scale: 5 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
4
150°
.2
5
10
.2 .4
.6 .8 1.0 1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–90°
–1
Ω
Ω
Condition: V = 1 V , Zo = 50
CE
Condition: V = 1 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
C
(I = 20 mA)
C
(I = 20 mA)
C
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Scale: 0.04 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
150°
4
.2
5
10
.2
.4 .6 .8 1.0 1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–90°
–1
Ω
Ω
Condition: V = 1 V , Zo = 50
CE
Condition: V = 1 V , Zo = 50
CE
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
C
(I = 20 mA)
C
(I = 20 mA)
C
6
2SC5247
S Parameter (VCE = 4 V, IC = 5 mA, ZO = 50 Ω)
Freq.
(MHz)
200
S11
S21
S12
S22
MAG.
0.785
0.650
0.537
0.450
0.400
0.354
0.317
0.308
0.283
0.279
ANG.
–33.8
–59.8
–79.7
–96.7
–112
–122
–134
–145
–154
–163
MAG.
11.8
9.73
7.85
6.54
5.43
4.67
4.09
3.64
3.32
3.02
ANG.
153
MAG.
0.037
0.061
0.077
0.087
0.097
0.105
0.114
0.123
0.133
0.142
ANG.
72.5
61.4
56.3
54.6
54.8
55.3
56.6
58.0
59.0
60.3
MAG.
0.905
0.758
0.632
0.540
0.477
0.434
0.403
0.382
0.363
0.348
ANG.
–20.6
–34.2
–42.5
–47.4
–49.5
–51.2
–52.3
–53.4
–54.7
–55.6
400
134
600
120
800
111
1000
1200
1400
1600
1800
2000
103
96.7
92.1
87.6
83.6
79.8
S Parameter (VCE = 4 V, IC = 20 mA, ZO = 50 Ω)
Freq.
(MHz)
200
S11
S21
S12
S22
MAG.
0.510
0.376
0.310
0.278
0.266
0.251
0.252
0.253
0.252
0.253
ANG.
–60.9
–96.0
–120
–137
–151
–162
–172
178
MAG.
21.4
14.3
10.4
8.05
6.56
5.54
4.81
4.25
3.83
3.48
ANG.
137
MAG.
0.029
0.044
0.056
0.069
0.082
0.095
0.108
0.122
0.135
0.148
ANG.
67.3
63.5
64.8
66.9
68.5
69.4
70.7
70.8
70.9
71.3
MAG.
0.747
0.527
0.411
0.347
0.310
0.287
0.272
0.261
0.255
0.248
ANG.
–33.8
–45.5
–48.7
–49.7
–49.1
–49.1
–48.8
–49.2
–49.8
–50.6
400
116
600
106
800
98.5
92.9
88.6
85.3
81.8
78.6
75.8
1000
1200
1400
1600
1800
2000
173
165
7
2SC5247
S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω)
Freq.
(MHz)
200
S11
S21
S12
S22
MAG.
0.763
0.627
0.517
0.448
0.408
0.375
0.351
0.333
0.326
0.325
ANG.
–39.3
–68.8
–90.9
–108
–124
–137
–147
–157
–166
–174
MAG.
11.6
9.27
7.33
5.94
4.98
4.28
3.73
3.32
3.02
2.76
ANG.
151
MAG.
0.046
0.073
0.089
0.101
0.111
0.121
0.130
0.141
0.152
0.161
ANG.
69.6
58.4
53.2
51.6
51.7
52.4
53.4
54.6
56.0
57.6
MAG.
0.879
0.708
0.570
0.475
0.409
0.365
0.333
0.311
0.290
0.275
ANG.
–25.4
–42.0
–51.8
–57.9
–61.7
–64.5
–66.0
–67.9
–69.8
–71.1
400
130
600
117
800
107
1000
1200
1400
1600
1800
2000
99.6
94.3
89.2
84.9
81.3
77.3
S Parameter (VCE = 1 V, IC = 10 mA, ZO = 50 Ω)
Freq.
(MHz)
200
S11
S21
S12
S22
MAG.
0.484
0.404
0.378
0.367
0.370
0.365
0.363
0.373
0.367
0.372
ANG.
–81.3
–120
–142
–157
–168
–176
177
MAG.
18.7
12.0
8.49
6.54
5.31
4.50
3.92
3.46
3.13
2.84
ANG.
131
MAG.
0.036
0.052
0.066
0.080
0.094
0.109
0.124
0.139
0.155
0.170
ANG.
62.6
59.5
61.6
64.1
65.6
67.1
68.0
68.3
68.5
68.9
MAG.
0.651
0.425
0.315
0.254
0.219
0.195
0.180
0.170
0.162
0.156
ANG.
–43.8
–60.0
–66.5
–70.3
–71.6
–73.3
–74.1
–75.9
–77.6
–78.4
400
111
600
101
800
94.6
89.4
85.2
81.8
78.3
75.4
72.2
1000
1200
1400
1600
1800
2000
170
164
158
8
Unit: mm
2.2 Max
4.2 Max
0.6 Max
0.45 ± 0.1
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
JEDEC
SPAK
—
EIAJ
—
Weight (reference value) 0.10 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
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(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
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Tel: <852> (2) 735 9218
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Tel: 535-2100
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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