2SC5249 [SANKEN]

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose); 硅NPN三重扩散平面型晶体管(开关稳压器和通用)
2SC5249
型号: 2SC5249
厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述:

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
硅NPN三重扩散平面型晶体管(开关稳压器和通用)

晶体 稳压器 开关 晶体管 功率双极晶体管
文件: 总1页 (文件大小:27K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2 S C5 2 4 9  
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)  
Application : Switching Regulator and General Purpose  
External Dimensions FM20(TO220F)  
Absolute maximum ratings  
Electrical Characteristics  
(Ta=25°C)  
(Ta=25°C)  
2SC5249  
2SC5249  
600  
Symbol  
ICBO  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Conditions  
VCB=600V  
Unit  
µA  
µA  
V
Unit  
±0.2  
4.2  
±0.2  
10.1  
c
0.5  
2.8  
100max  
100max  
600min  
20 to 40  
0.5max  
1.2max  
6typ  
V
600  
IEBO  
VEB=7V  
V
7
V(BR)CEO  
hFE  
IC=10mA  
V
±0.2  
ø3.3  
a
b
3(Pulse6)  
1.5  
VCE=4V, IC=1A  
IC=1A, IB=0.2A  
IC=1A, IB=0.2A  
VCE=12V, IE=0.3A  
VCB=10V, f=1MHz  
A
VCE(sat)  
VBE(sat)  
fT  
IB  
V
V
A
PC  
35(Tc=25°C)  
150  
W
°C  
°C  
±0.15  
1.35  
Tj  
MHz  
pF  
±0.15  
1.35  
50typ  
COB  
Tstg  
–55 to +150  
+0.2  
-0.1  
0.85  
+0.2  
-0.1  
0.45  
±0.2  
2.4  
2.54  
2.54  
Typical Switching Characteristics (Common Emitter)  
±0.2  
2.2  
Weight : Approx 2.0g  
a. Type No.  
b. Lot No.  
VCC  
(V)  
RL  
IC  
VBB1  
VBB2  
(V)  
IB1  
IB2  
tstg  
ton  
tf  
()  
(A)  
(V)  
(A)  
(A)  
(µs)  
(µs)  
(µs)  
B
C E  
200  
200  
1
10  
–5  
0.1  
–0.1  
19max  
1.0max  
1.0max  
IC VCE Characteristics (Typical)  
VCE(sat) IC Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=4V)  
3
3
2
1
0
0.5  
IC/IB=5 Const.  
2
1
0
125˚C (Case Temp)  
25˚C (Case Temp)  
–55˚C (Case Temp)  
IB=20mA  
0
0.01  
0
1
2
3
4
0.05  
0.1  
0.5  
1
3
0
0.5  
1.0  
Collector-Emitter Voltage VCE(V)  
Base-Emittor Voltage VBE(V)  
Collector Current IC(A)  
hFE IC Characteristics (Typical)  
tontstgtf IC Characteristics (Typical)  
θ
j-a t Characteristics  
(VCE=4V)  
3
1
200  
100  
50  
30  
125˚C  
25˚C  
tstg  
10  
5
VCC 200V  
IC:IB1:–IB2=10:1:1  
–55˚C  
ton  
tf  
1
0.5  
0.3  
10  
5
0.5  
0.2  
0.1  
1
10  
100  
1000  
0.01  
0.05 0.1  
0.5  
1
3
0.5  
1
3
Collector Current IC(A)  
Time t(ms)  
Collector Current IC(A)  
Safe Operating Area (Single Pulse)  
Reverse Bias Safe Operating Area  
Pc Ta Derating  
7
5
35  
30  
7
5
1
1
20  
10  
0.5  
0.5  
Without Heatsink  
Natural Cooling  
L=3mH  
Without Heatsink  
Natural Cooling  
–IB2=–1.0A  
Duty:less than 1%  
0.1  
0.1  
Without Heatsink  
2
0
0.05  
0.05  
10  
50  
100  
500  
10  
50  
100  
500  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
131  

相关型号:

2SC5250

Silicon NPN Triple Diffused Planar
HITACHI

2SC5250

Silicon NPN Power Transistors
SAVANTIC

2SC5250

Silicon NPN Power Transistors
ISC

2SC5251

Silicon NPN Triple Diffused Planar
HITACHI

2SC5252

Silicon NPN Triple Diffused Planar
HITACHI

2SC5254

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
TOSHIBA

2SC5254(TE85L)

2SC5254(TE85L)
TOSHIBA

2SC5254-O

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP RF Small Signal
TOSHIBA

2SC5254-R

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP RF Small Signal
TOSHIBA

2SC5254O

TRANSISTOR | BJT | NPN | 7V V(BR)CEO | 40MA I(C) | SOT-23
ETC

2SC5254R

TRANSISTOR | BJT | NPN | 7V V(BR)CEO | 40MA I(C) | SOT-23
ETC

2SC5255

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND SOW NOISE AMPLIFIER APPLICATIONS)
TOSHIBA