2SC5250 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC5250 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5250
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·Character display horizontal deflection
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
VCEO
VEBO
IC
Open base
1500
Open collector
6
V
8
16
A
ICP
ID
Collector current-peak
Diode current
A
8
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5250
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
ICES
PARAMETER
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
CONDITIONS
IC=400mA ;IB=0
MIN
TYP.
MAX
UNIT
V
6
VCE=1500V; RBE=0
IC=1A ; VCE=5V
IC=5A ; VCE=5V
IC=5A ; IB=1.25A
IC=5A ; IB=1.25A
IF=8A
500
25
7
μA
hFE-1
6
4
hFE-2
DC current gain
VCE(sat)
VBE(sat)
VECF
Collector-emitter saturation voltage
Base-emitter saturation voltage
Forward voltage of damper diode
Fall time
5
V
V
1.5
2
V
ICP=5A;IB1=1A;
fH=31.5kHz
tf
0.2
0.4
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5250
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5250
4
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