2SC5248 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SC5248 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5248
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SA1964
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
160
160
5
UNIT
V
V
V
A
Collector Current-Continuous
1.5
Collector Power Dissipation
@Ta=25℃
2
PC
W
Collector Power Dissipation
@TC=25℃
20
Junction Temperature
Storage Temperature
150
-55~150
℃
℃
TJ
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5248
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
160
160
5
TYP.
MAX
UNIT
V
IC= 1mA; IB= 0
IC= 50μA; IE= 0
V
IE= 50μA; IC= 0
V
IC= 1A; IB= 0.1A
1.0
1.0
1.0
200
V
VCE
(sat)
ICBO
VCB= 160V; IE= 0
VEB= 4V; IC= 0
μA
μA
IEBO
hFE
fT
Emitter Cutoff Current
DC Current Gain
IC= 0.1A; VCE= 5V
IC= 0.2A; VCE= 10V
IE= 0; VCB= 10V; f= 1MHz
60
Current-Gain—Bandwidth Product
Output Capacitance
150
20
MHz
pF
COB
hFE Classifications
D
E
60-120
100-200
2
isc Website：www.iscsemi.cn
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2SC5249
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