G8921-01_04 [HAMAMATSU]
GaAs PIN photodiode array; 对GaAs PIN光电二极管阵列
| 型号： | G8921-01_04 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | GaAs PIN photodiode array |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
GaAs PIN photodiode array
G8921-01
Photodiode array for data communication
Features
Applications
Active area: φ0.06 mm
Optical fiber communications
High-speed data link
Element pitch: 250 µm
4-element array
High-speed response: 10 Gbps [(2.5 Gbps per channel) ×4]
at low bias voltage (VR=2 V)
Low dark current, low capacitance
Up to 16 elements available as option
ꢀ General ratings
Parameter
Symbol
Value
f0.06
250
4
Unit
mm
µm
ch
Active area
-
-
-
Element pitch
Number of elements
ꢀ Absolute maximum ratings
Parameter
Symbol
VR Max.
IR Max.
Topr
Remark
Value
30
Unit
V
Reverse voltage
Reverse current
0.5
mA
°C
Operating temperature
Storage temperature
* In N2 environment or in vacuum
-40 to +85
-55 to +125
*
Tstg
°C
ꢀ Electrical and optical characteristics (Unless other wise, Ta=25 °C, per 1 element)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Symbol
Condition
Min.
Typ.
470 to 870
850
Max.
Unit
nm
nm
A/W
pA
l
lp
S
-
-
-
-
l=850 nm
0.45
0.5
-
Dark current
ID
Ct
VR=5 V
-
-
2
50
0.5
Terminal capacitance
VR=2 V, f=1 MHz
l=850 nm, VR=2 V,
RL=50 W, -3 dB
0.35
pF
Cut-off frequency
fc
2
-
-
GHz
1
GaAs PIN photodiode array G8921-01
ꢀ Spectral response
ꢀ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
0.6
100 pA
0.5
0.4
0.3
0.2
0.1
0
10 pA
1 pA
100 fA
10 fA
300
400
500
600
700
800
900 1000
0.01
0.1
1
10
100
WAVELENGTH (nm)
REVERSE VOLTAGE (V)
KGPDB0048EA
KGPDB0049EA
ꢀ Terminal capacitance vs. reverse voltage
ꢀ Cross-talk characteristic
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C, λ=830 nm, step: 5 µm, Pin=20 nW, spot light size: 10 µm)
10 pF
1000
100
10
n ch
n+1 ch
1
1 pF
0.1
0.01
0.001
100 fF
0.01
0.1
1
10
100
0
100
200
300
400
500
REVERSE VOLTAGE (V)
POSITION (µm)
KGPDB0050EA
KGPDB0051EA
ꢀ Dimensional outline (unit: mm)
0.15
0.25
ANODE
CATHODE
6.4
ACTIVE AREA
0.06 × 4 ch
KGPDA0017EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KGPD1009E02
Jan. 2004 DN
2
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