G8931-03 [HAMAMATSU]
Avalanche Photodiode;
| 型号： | G8931-03 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Avalanche Photodiode 局域网 光电 半导体 |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
InGaAs APD
G8931-03
2.5 Gbps operation, avalanche photodiode
Features
Applications
2.5 Gbps operation
Low capacitance
Optical fiber communications
SDH/SONET
Active area: φ0.03 mm
Metro area network
ꢀ General rating
Parameter
Active area
Symbol
-
Value
φ0.03
Unit
mm
ꢀ Absolute maximum ratings
Parameter
Forward current
Reverse current
Operating temperature
Storage temperature
Symbol
Value
2
500
Unit
mA
µA
°C
F
I
R
I
Topr
Tstg
-40 to +85
-55 to +125
°C
ꢀ Electrical and optical characteristics (Ta=25 °C)
Parameter
Photo sensitivity
Symbol
S
Condition
Min.
0.73
45
-
Typ.
-
-
0.2
20
Max.
-
80
-
50
Unit
A/W
V
%/°C
nA
λ=1.3 µm, M=1
BR
D
Breakdown voltage
Temperature coefficient of V
Dark current
V
I =10 µA
BR
δ
*
D
R
BR
I
V =V × 0.95
-
R
BR
V =V × 0.95,
Terminal capacitance
Ct
-
-
0.3
pF
f=1 MHz
Cut-off frequency
Gain
fc
M
M=10
λ=1.55 µm
-
15
2
-
-
-
GHz
-
* δ=[VB (25 + ∆T)-VB (25)] / [∆T × VB (25)] × 100 (%/°C)
1
InGaAs APD G8931-03
ꢀꢀSpectral response
ꢀꢀDark current vs. reverse voltage
(Typ.)
(Typ. Ta=25 ˚C, M=1)
1 mA
100 µA
10 µA
1 µA
1.0
0.8
0.6
0.4
0.2
0
50 ˚C
25 ˚C
0 ˚C
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
100 fA
0
20
40
60
80
100
0.6
0.8
1
1.2
1.4
1.6
1.8
2.0
REVERSE VOLTAGE (V)
WAVELENGTH (µm)
KAPDB0068EA
KAPDB0069EA
ꢀꢀTerminal capacitance vs. reverse voltage
ꢀꢀDimensional outline (unit: mm)
(Typ. Ta=25 ˚C)
1.6
5.4 ± 0.2
4.7 ± 0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
WINDOW
3.0 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.5 ± 0.2
0
10
20
30
40
50
60
70
REVERSE VOLTAGE (V)
KAPDB0070EA
CASE
KIRDA0154EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KAPD1011E03
Jul. 2003 DN
2
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