G8931-20 [HAMAMATSU]
InGaAs APD; 砷化铟镓APD
| 型号： | G8931-20 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | InGaAs APD |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
InGaAs APD
G8931-20
Large active area: φ0.2 mm, high-speed response: 0.9 GHz
G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its
large active area of φ0.2 mm, G8931-20 provides high-speed response (typical cut-off frequency 0.9 GHz at M=10).
Features
Applications
Active area: φ0.2 mm
Low voltage operation
Low capacitance
High sensitivity
Distance measurement
Spatial light transmission
OTDR
Low-light-level detection
Low dark current
ꢀ General ratings
Parameter
Active area
Symbol
-
Value
φ0.2
Unit
mm
ꢀ Absolute maximum ratings
Parameter
Forward current
Symbol
IF
Value
2
500
Unit
mA
µA
R
Reverse current
I
Operating temperature
Storage temperature
Topr
Tstg
-40 to +85
-55 to +125
°C
°C
ꢀ Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Symbol
Condition
Min.
-
-
0.8
40
-
Typ.
0.9 to 1.7
1.55
0.9
Max.
-
-
-
60
0.16
200
-
Unit
µm
µm
A/W
V
V/°C
nA
λ
λp
S
λ=1.55 µm, M=1
BR
D
Breakdown voltage
V
I =100 µA
-
Temperature coefficient of VBR
Dark current
Γ
-40 to +85 °C
0.11
150
0.9
D
R
BR
I
V =V
× 0.9
-
Cut-off frequency
fc
M=10
0.6
GHz
VR=VBR × 0.9
f=1 MHz
Terminal capacitance
Ct
-
1.5
2
pF
ꢀꢀSpectral response
ꢀꢀDark current vs. reverse voltage
(Typ. Ta=25 ˚C, M=1)
(Typ. Ta=25 ˚C)
1.0
0.8
0.6
0.4
0.2
0
1 mA
100 µA
10 µA
1 µA
PHOTOCURRENT
100 nA
10 nA
1 nA
DARK CURRENT
100 pA
10 pA
1 pA
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
10
20
30
40
50
WAVELENGTH (µm)
REVERSE VOLTAGE (V)
KAPDB0120EA
KAPDB0121EA
1
InGaAs APD G8931-20
ꢀꢀTerminal capacitance vs. reverse voltage
ꢀꢀDimensional outline (unit: mm)
5.4 ± 0.2
(Typ. Ta=25 ˚C)
12
4.7 ± 0.1
WINDOW
3.0 ± 0.1
10
8
PHOTOSENSITIVE
SURFACE
6
0.45
LEAD
4
2.5 ± 0.2
2
0
0
10
20
30
40
50
REVERSE VOLTAGE (V)
KAPDB0122EA
CASE
KAPDA0034EA
ꢀꢀPeripheral circuit example of APD
BIAS SUPPLY VOLTAGE
(FOR TEMPERATURE COMPENSATION)
1 MΩ MIN.
CURRENT LIMITTING RESISTANCE
0.1 µF MIN.
(AS CLOSE TO APD AS POSSIBLE)
EXCESSIVE VOLTAGE
PROTECTIVE CIRCUIT
APD
-
+
HIGH-SPEED OP AMP
LH0032, etc.
READOUT
CIRCUIT
KAPDC0005EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KAPD1019E02
Jul. 2007 DN
2
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