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G8941-01 [HAMAMATSU]

InGaAs PIN photodiode; 砷化铟镓PIN光电二极管
G8941-01
型号： G8941-01
厂家： HAMAMATSU CORPORATION    HAMAMATSU CORPORATION
描述：

InGaAs PIN photodiode
砷化铟镓PIN光电二极管

光电 二极管 光电二极管
文件： 总3页 (文件大小：141K)
中文：  中文翻译
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P H O T O D I O D E  
InGaAs PIN photodiode  
G8941 series  
Sub-mount type photodiode for LD monitor  
Features  
Applications  
Active area  
LD monitor  
G8941-01: φ1 mm  
G8941-02: φ0.5 mm  
G8941-03: φ0.3 mm  
Miniature package: 2 × 2 × 1 mm  
Precise chip position tolerance: 0.0ꢀ5 mm  
ꢀ General rating  
Parameter  
G8941-01  
G8941-02  
G8941-03  
Unit  
mm  
Active area  
f1  
f0.5  
f0.3  
ꢀ Absolute maximum ratings  
Parameter  
Symbol  
Remark  
G8941-01  
10  
G8941-02  
20  
G8941-03  
20  
Unit  
V
VR  
Max.  
Reverse voltage  
Operating  
temperature  
Storage  
Topr  
Tstg  
-40 to +85  
°C  
°C  
*
-55 to +125  
temperature  
* In N2 environment or in vacuum  
ꢀ Electrical and optical characteristics (Ta=25 °C)  
G8941-01  
G8941-02  
G8941-03  
Parameter  
Symbol  
Condition  
Unit  
µm  
Min.  
Typ. Max. Min.  
0.9 to 1.7  
0.9  
Typ. Max. Min.  
Typ. Max.  
Spectral  
response range  
Photo sensitivity  
0.9 to 1.7  
0.9 to 1.7  
l
0.8  
-
-
0.8  
0.9  
0.95  
0.5  
-
-
0.8  
0.9  
0.95  
0.3  
-
-
l=1.31 µm  
l=1.55 µm  
VR=5 V  
S
A/W  
0.85  
0.95  
1
0.85  
0.85  
Dark current  
Shunt resistance  
Terminal  
capacitance  
Cut-off  
frequency  
ID  
-
-
5
-
-
-
2.5  
-
-
-
1.5  
-
nA  
Rsh  
VR=10 mV  
VR=5 V,  
f=1 MHz  
VR=5 V,  
RL=50 W  
100  
300  
1000  
MW  
Ct  
fc  
-
-
90  
35  
-
-
-
-
12  
-
-
-
-
5
-
-
pF  
200  
400  
MHz  
Noise equivalent  
power  
NEP  
2 × 10-14  
5 × 1012  
8 × 10-15  
5 × 1012  
4 × 10-15  
5 × 1012  
W/Hz1/2  
l=lp  
l=lp  
Detectivity  
cmHz1/2/W  
D*  
1
InGaAs PIN photodiode G8941 series  
ꢀ Spectral response  
ꢀ Dark current vs. reverse voltage  
(Typ. Ta=25 ˚C)  
(Typ. Ta=25 ˚C)  
1
10 nA  
G8941-01  
1 nA  
0.5  
G8941-02  
100 pA  
G8941-03  
10 pA  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0.01  
0.1  
1
10  
100  
WAVELENGTH (µm)  
REVERSE VOLTAGE (V)  
KIRDB0002EB  
KIRDB0270EB  
ꢀ Terminal capacitance vs. reverse voltage  
ꢀ Dark current vs. temperature  
(Typ. Ta=25 ˚C, f=1 MHz)  
(Typ. VR=5 V)  
1 nF  
100 nA  
G8941-01  
10 nA  
G8941-01  
G8941-02  
100 pF  
1 nA  
G8941-02  
100 pA  
G8941-03  
10 pF  
G8941-03  
10 pA  
1 pF  
0.01  
1 pA  
0.1  
1
10  
100  
-60  
-40  
-20  
0
20  
40  
60  
80 100  
REVERSE VOLTAGE (V)  
TEMPERATURE (˚C)  
KIRDB0271EA  
KIRDB0272EA  
2
InGaAs PIN photodiode G8941 series  
ꢀ Dimensional outline (unit: mm)  
G8941-01  
G8941-02  
2
0.05  
PHOTOSENSITIVE  
SURFACE  
PHOTOSENSITIVE  
SURFACE  
ANODE  
2
0.05  
(0.25)  
ANODE  
(0.25)  
1
0.1  
1
0.1  
0.2  
0.2  
0.3  
0.2  
(0.8)  
(0.8)  
0.6  
0.925  
ACTIVE AREA 0.5  
CATHODE  
ACTIVE AREA 1.0  
CATHODE  
Tolerance unless otherwise noted: 0.075  
Values in parentheses are not  
guaranteed, but for reference.  
Tolerance unless otherwise noted: 0.075  
Values in parentheses are not  
guaranteed, but for reference.  
2
0.05  
2
0.05  
KIRDA0159EA  
KIRDA0160EA  
G8941-03  
PHOTOSENSITIVE  
SURFACE  
ANODE  
2
0.05  
(0.25)  
0.2  
1
0.1  
0.2  
0.5  
(0.8)  
ACTIVE AREA 0.3  
CATHODE  
Tolerance unless otherwise noted: 0.075  
Values in parentheses are not  
guaranteed, but for reference.  
2
0.05  
KIRDA0161EA  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.  
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.  
HAMAMATSU PHOTONICS K.K., Solid State Division  
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658  
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777  
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01  
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741  
Cat. No. KIRD1054E03  
Jul. 2002 DN  
3

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