G1420 [GMT]
2W Stereo Audio Amplifier; 2W立体声音频放大器
| 型号： | G1420 |
| 厂家： | 
GLOBAL MIXED-MODE TECHNOLOGY INC |
| 描述： | 2W Stereo Audio Amplifier |
| 文件： | 总20页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
G1420
Global Mixed-mode Technology Inc.
2W Stereo Audio Amplifier
Features
General Description
Depop Circuitry Integrated
G1420 is a stereo audio power amplifier in 24pin
TSSOP thermal pad package. It can drive 1.8W con-
tinuous RMS power into 4Ω load per channel in
Bridge-Tied Load (BTL) mode at 5V supply voltage. Its
THD is smaller than 1% under the above operation
condition. To simplify the audio system design in the
notebook application, G1420 supports the Bridge-Tied
Load (BTL) mode for driving the speakers, Single-End
(SE) mode for driving the headphone. G1420 can
mute the output when Mute-In is activated. For the low
current consumption applications, the SHDN mode is
supported to disable G1420 when it is idle. The current
consumption can be further reduced to below 5µA.
Output Power at 1% THD+N, VDD=5V
--1.8W/CH (typical) into a 4Ω Load
--1.2W/CH (typical) into a 8Ω Load
Bridge-Tied Load (BTL), Single-Ended (SE)
Stereo Input MUX
Mute and Shutdown Control Available
Surface-Mount Power Package
24-Pin TSSOP-P
Applications
Stereo Power Amplifiers for Notebooks or
Desktop Computers
G1420 also supports two input paths, that means two
different gain loops can be set in the same PCB and
Multimedia Monitors
Stereo Power Amplifiers for Portable Audio
Systems
choosing either one by setting HP/LINE pin. It en-
hances the hardware designing flexibility.
Ordering Information
ORDER
NUMBER
G1420F31U
ORDER NUMBER
(Pb free)
TEMP.
PACKAGE
RANGE
G1420F31Uf
-40°C to +85°C
TSSOP-24 (FD)
Note: F3: TSSOP-24 (FD)
U: Tape & Reel
Pin Configuration
G1420
GND/HS
NC
GND/HS
24
23
1
TJ
LOUT+
LLINEIN
2
3
22 ROUT+
RLINEIN
4
5
6
21
20 RHPIN
LHPIN
LBYPASS
LVDD
Thermal
Pad
19 RBYPASS
18
17
16
RVDD
NC
7
8
SHUTDOWN
MUTE OUT
LOUT-
9
HP/LINE
10
15 ROUT-
14 SE/BTL
MUTE IN 11
12
13
GND/HS
GND/HS
Top View
Bottom View
TSSOP-24 (FD)
Note: Recommend connecting the Thermal Pad to the GND for excellent power dissipation.
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.5
Aug 04, 2005
1
G1420
Global Mixed-mode Technology Inc.
Absolute Maximum Ratings
Supply Voltage, VCC…………………..…..…….……...6V
Operating Ambient Temperature Range
Power Dissipation (1)
TA ≤ 25°C…………………………………………..2.7W
TA ≤ 70°C…………………………………………..1.7W
TA ≤ 85°C………………….……………………….1.4W
Electrostatic Discharge, VESD
TA…….…………………………….……….40°C to +85°C
Maximum Junction Temperature, TJ…….…….…150°C
Storage Temperature Range, TSTG……-65°C to+150°C
Reflow Temperature (soldering, 10sec)…………260°C
Human body mode..…………………….-3000 to 3000(2)
Note:
(1) : Recommended PCB Layout
(2) : Human body model : C = 100pF, R = 1500Ω, 3 positive pulses plus 3 negative pulses
Electrical Characteristics
DC Electrical Characteristics, TA=+25°C
PARAMETER
SYMBOL
CONDITIONS
Stereo BTL
MIN TYP MAX UNIT
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7
3.5
8
13
8
VDD =3.3V
Stereo SE
Stereo BTL
Stereo SE
Supply Current
IDD
mA
16
10
50
16
10
5
VDD = 5V
4
DC Differential Output Voltage
Supply Current in Mute Mode
VO(DIFF)
IDD(MUTE)
ISD
VDD = 5V,Gain = 2
5
mV
mA
µA
Stereo BTL
Stereo SE
8
VDD = 5V
---
---
4
IDD in Shutdown
VDD = 5V
2
(AC Operation Characteristics, VDD = 5.0V, TA=+25°C, RL = 4Ω, unless otherwise noted)
PARAMETER
SYMBOL
CONDITIONS
THD = 1%, BTL, RL = 4Ω
THD = 1%, BTL, RL = 8Ω
THD = 10%, BTL, RL = 4Ω
THD = 10%, BTL, RL = 8Ω
THD = 1%, SE, RL = 4Ω
THD = 1%, SE, RL = 8Ω
THD = 10%, SE, RL = 4Ω
THD = 10%, SE, RL L = 8Ω
THD = 0.5%, SE, RL = 32Ω
PO = 1.6W, BTL, RL = 4Ω
PO = 1W, BTL, RL = 8Ω
PO = 75mW, SE, RL = 32Ω
VI = 1V, RL = 10KΩ, G = 1
G = 1, THD = 1%
MIN TYP MAX UNIT
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1.8
1.12
2
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W
1.4
500
320
650
400
90
Output power (each channel) see Note
P(OUT)
mW
500
150
20
Total harmonic distortion plus noise
THD+N
m%
10
Maximum output power bandwidth
Phase margin
BOM
20
kHz
°
RL = 4Ω, Open Load
60
Power supply ripple rejection
Mute attenuation
PSRR
f = 120Hz
75
dB
85
dB
Channel-to-channel output separation
Line/HP input separation
BTL attenuation in SE mode
Input impedance
f = 1kHz
82
dB
80
dB
85
dB
ZI
2
MΩ
dB
Signal-to-noise ratio
PO = 500mW, BTL
90
Output noise voltage
Vn
Output noise voltage
55
µV (rms)
Note :Output power is measured at the output terminals of the IC at 1kHz.
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.5
Aug 04, 2005
2
G1420
Global Mixed-mode Technology Inc.
(AC Operation Characteristics, VDD = 3.3V, TA=+25°C, RL = 4Ω, unless otherwise noted)
PARAMETER
SYMBOL
CONDITIONS
THD = 1%, BTL, RL = 4Ω
THD = 1%, BTL, RL = 8Ω
THD = 10%, BTL, RL = 4Ω
THD = 10%, BTL, RL = 8Ω
THD = 1%, SE, RL = 4Ω
THD = 1%, SE, RL = 8Ω
THD = 10%, SE, RL = 4Ω
THD = 10%, SE, RL L = 8Ω
THD = 0.5%, SE, RL = 32Ω
PO = 1.6W, BTL, RL = 4Ω
PO = 1W, BTL, RL = 8Ω
PO = 75mW, SE, RL = 32Ω
VI = 1V, RL = 10KΩ, G = 1
G = 1, THD 1%
MIN TYP MAX UNIT
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0.8
0.5
1
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W
0.6
230
140
290
180
43
Output power (each channel) see Note
P(OUT)
mW
270
100
20
Total harmonic distortion plus noise
THD+N
m%
10
Maximum output power bandwidth
Phase margin
BOM
20
kHz
°
dB
RL = 4Ω, Open Load
f = 120Hz
60
Power supply ripple rejection
Mute attenuation
PSRR
75
85
dB
Channel-to-channel output separation
Line/HP input separation
BTL attenuation in SE mode
Input impedance
f = 1kHz
80
dB
80
dB
85
dB
ZI
2
MΩ
dB
Signal-to-noise ratio
PO = 500mW, BTL
90
Output noise voltage
Vn
Output noise voltage
55
µV (rms)
Note :Output power is measured at the output terminals of the IC at 1kHz.
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.5
Aug 04, 2005
3
G1420
Global Mixed-mode Technology Inc.
Table of Graphs
Typical Characteristics
FIGURE
1,3,6,9,10,13,16,19,22,25,28,31
THD +N Total Harmonic Distortion Plus vs Output Power
Noise
Vn
vs Frequency
2,4,5,7,8,11,12,14,15,17,18,20,21,23,24,26,27,29,30,32,33
Output Noise Voltage
Supply Ripple Rejection Ratio
Crosstalk
vs Frequency
34,35
vs Frequency
36,37
vs Frequency
38,39,40,41
42,43,44,45
46
Closed Loop Response
vs Frequency
IDD Supply Current
PO Output Power
PD Power Dissipation
vs Supply Voltage
vs Load Resistance
vs Load Resistance
vs Output Power
47,48
49,50
51,52,53,54
Total Harmonic Distortion Plus
Total Harmonic Distortion Plus
Noise vs Output Frequency
Noise vs Output Power
10
5
10
5
2
20kHz
2
1
1
Po=1.8W
1kHz
0.5
0.5
%
%
0.2
0.1
0.2
VDD=5V
0.1
Po=1.5W
RL=3
20 Hz
Ω
VDD=5V
0.05
0.05
BTL
RL=3
Ω
Av=-2V/V
BTL
0.02
0.01
0.02
0.01
3m
5 m
10m
20m
5 0m
1 00m
W
20 0m
500 m
1
2
3
20
50
10 0
2 00
5 00
Hz
1k
2 k
5 k
10 k
20k
Figure 1
Figure 2
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
Av=-4V/V
20kHz
2
1
2
1
Av=-2V/V
0.5
0.5
1kHz
%
%
0.2
0.1
0.2
0.1
VDD=5V
Av=-1V/V
VDD=5V
20 Hz
RL=4
BTL
Ω
0.05
0.05
RL=4
BTL
Ω
Po=1.5W
0.02
0.01
0.02
0.01
3m
5 m
10m
20m
5 0m
1 00m
W
20 0m
500 m
1
2
3
20
50
10 0
2 00
5 00
Hz
1k
2 k
5 k
10 k
20k
Figure 3
Figure 4
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.5
Aug 04, 2005
4
G1420
Global Mixed-mode Technology Inc.
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
VDD=5V
VDD=5V
5
RL=8
BTL
Av=-2V/V
Ω
RL=4
BTL
Av=-2V/V
Ω
20kHz
Po=1.5W
2
1
2
1
Po=0.25W
0.5
0.5
%
%
0.2
0.1
0.2
0.1
1kHz
Po=0.75W
0.05
0.05
20Hz
0.02
0.01
0.02
0.01
20
50
10 0
200
5 00
Hz
1k
2k
5k
10k
20k
3m
5 m
10m
20m
50m
100m
W
200m
500 m
1
2
3
Figure 5
Figure 6
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=5V
VDD=5V
RL=8
BTL
Av=-2V/V
RL=8
BTL
Po=1W
Ω
Ω
2
1
2
1
Av=-4V/V
Po=1W
Po=0.25W
0.5
0.5
%
Av=-2V/V
%
0.2
0.1
0.2
0.1
Po=0.5W
0.05
0.05
Av=-1V/V
0.02
0.01
0.02
0.01
20
50
10 0
200
5 00
Hz
1k
2k
5k
10k
20k
20
50
10 0
200
5 00
Hz
1k
2k
5k
10k
20k
Figure 8
Figure 7
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
5
20kHz
1kHz
20kHz
2
1
2
1
1kHz
0.5
0.5
%
%
0.2
0.1
0.2
0.1
VDD=3.3V
VDD=3.3V
20Hz
0.05
0.05
RL=3
20Hz
Ω
RL=4
Ω
BTL
BTL
0.02
0.01
0.02
0.01
1m
2m
5m
1 0m
20m
50 m
100m
200m
500m
1
1m
2m
5m
1 0m
20m
50 m
100m
200m
500m
1
W
W
Figure 9
Figure 10
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.5
Aug 04, 2005
5
G1420
Global Mixed-mode Technology Inc.
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
10
5
VDD=3.3V
5
VDD=3.3V
Av=-4V/V
RL=4
BTL
Av=-2V/V
Ω
RL=4
BTL
Po=0.65W
Ω
2
1
2
1
Po=0.7W
Av=-2V/V
0.5
0.5
%
%
Po=0.1W
0.2
0.1
0.2
0.1
Po=0.35W
Av=-1V/V
0.05
0.05
0.02
0.01
0.02
0.01
20
50
100
2 00
5 00
Hz
1k
2 k
5k
10k
20k
20
50
10 0
2 00
5 00
Hz
1k
2k
5k
10k
20k
Figure 11
Figure 12
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
VDD=3.3V
5
VDD=3.3V
RL=8
Ω
RL=8
Ω
20kHz
2
1
BTL
2
1
Av=-4V/V
BTL
Po=0.4W
0.5
Av=-2V/V
0.5
%
%
1kHz
0.2
0.1
0.2
0.1
0.05
0.05
Av=-1V/V
20Hz
0.02
0.01
0.02
0.01
1m
2m
5m
10m
20 m
50 m
10 0m
2 00m
500 m
1
20
50
10 0
200
500
Hz
1k
2 k
5 k
10 k
20k
W
Figure 13
Figure 14
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
5
VDD=5V
VDD=3.3V
RL=4
SE
RL=8
BTL
Av=-2V/V
Ω
Ω
2
1
2
1
Po=0.4W
20kHz
0.5
0.5
%
%
Po=0.1W
0.2
0.1
0.2
0.1
1kHz
0.05
0.05
Po=0.25W
100Hz
0.02
0.01
0.02
0.01
20
50
10 0
2 00
5 00
Hz
1k
2k
5k
10k
20k
1m
2m
5m
1 0m
20m
50 m
10 0m
2 00 m
500 m
1
W
Figure 15
Figure 16
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.5
Aug 04, 2005
6
G1420
Global Mixed-mode Technology Inc.
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
VDD=5V
5
VDD=5V
RL=4
Ω
RL=4
Ω
2
1
2
1
SE
Av=-4V/V
SE
Po=0.5W
Po=0.4W
Av=-2V/V
0.5
0.5
%
%
Av=-2V/V
0.2
0.1
0.2
0.1
Po=0.1W
0.05
0.05
Av=-1V/V
Po=0.25W
0.02
0.01
0.02
0.01
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
20
50
10 0
200
500
Hz
1k
2k
5k
10k
20k
Figure 17
Figure 18
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
5
VDD=5V
VDD=5V
RL=8
Ω
RL=8
Ω
2
1
2
1
SE
SE
Po=0.25W
20kHz
0.5
0.5
Av=-2V/V
%
%
0.2
0.1
0.2
0.1
Av=-4V/V
1kHz
0.05
0.05
100Hz
0.02
0.01
0.02
0.01
Av=-1V/V
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
1m
2m
5m
10m
20 m
50m
100m
200 m
500 m
1
W
Figure 19
Figure 20
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=5V
VDD=5V
RL=8
2
1
Ω
RL=32
Ω
2
1
SE
Av=-2
SE
0.5
20kHz
0.2
0.1
0.5
Po=0.05W
%
%
0.2
0.1
0.05
20Hz
0.02
0.01
Po=0.1W
0.05
0.005
Po=0.25W
1kHz
0.02
0.01
0.002
0.001
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
1m
2m
5m
10m
20m
50m
100m
200m
W
Figure 21
Figure 22
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.5
Aug 04, 2005
7
G1420
Global Mixed-mode Technology Inc.
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=5V
VDD=5V
RL=32
2
1
Ω
RL=32
SE
2
1
Ω
SE
0.5
Po=75mW
0.5
Av=-4V/V
Po=25mW
0.2
0.1
0.2
0.1
%
%
Av=-2V/V
0.05
0.05
Po=50mW
0.02
0.01
0.02
0.01
0.005
0.005
Av=-1V/V
Po=75mW
0.002
0.001
0.002
0.001
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
Figure 23
Figure 24
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
5
VDD=3.3V
VDD=3.3V
RL=4 ,SE
Ω
RL=4
SE
Ω
Av=-2
2
1
2
1
20kHz
Av=-4V/V
Po=0.2W
0.5
0.5
%
%
Av=-2V/V
0.2
0.1
0.2
0.1
1kHz
0.05
0.05
100Hz
0.02
0.01
0.02
0.01
Av=-1V/V
20
50
10 0
200
500
Hz
1k
2k
5k
10k
20k
1m
2m
5m
10m
20m
50m
100m
200m
500m
1
W
Figure 25
Figure 26
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
10
5
R
R
5
VDD=3.3V
VDD=3.3V
RL=8 ,SE
Ω
RL=4
Ω
2
1
2
1
Av=-2
Po=50mW
SE
Av=-2
20kHz
0.5
0.5
%
%
0.2
0.1
0.2
0.1
Po=100mW
1kHz
0.05
0.05
0.02
0.01
0.02
0.01
Po=150mW
100Hz
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
1m
2m
5m
10m
20m
50m
100m
200m
W
Figure 27
Figure 28
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.5
Aug 04, 2005
8
G1420
Global Mixed-mode Technology Inc.
Total Harmonic Distortion Plus
Total Harmonic Distortion Plus
Noise vs Output Frequency
Noise vs Output Frequency
10
10
5
5
VDD=3.3V
VDD=3.3V
RL=8
Ω
RL=8
SE
Ω
2
1
2
1
SE
Po=100mW
Av=-4V/V
Po=25mW
0.5
0.5
%
%
0.2
0.1
0.2
0.1
Po=50mW
Av=-2V/V
0.05
0.05
0.02
0.01
0.02
0.01
Av=-1V/V
Po=100mW
20
50
100
200
5 00
Hz
1k
2k
5 k
10 k
20k
20
50
100
2 00
500
Hz
1k
2 k
5k
10k
20k
Figure 29
Figure 30
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
5
VDD=3.3V
VDD=3.3V
2
1
RL=32
Ω
RL=32
SE
Ω
2
1
1kHz
SE
Av=-4V/V
0.5
Po=30mW
0.2
0.1
0.5
20kHz
Av=-2V/V
%
%
0.2
0.1
0.05
0.02
0.01
20Hz
0.05
0.005
Av=-1V/V
0.02
0.01
0.002
0.001
20
50
100
2 00
500
Hz
1k
2 k
5k
10k
20k
1m
2m
5m
1 0m
W
20m
50m
1 00m
Figure 31
Figure 32
Total Harmonic Distortion Plus
Noise vs Output Frequency
Output Noise Voltage vs Frequency
10
100u
90u
80u
5
VDD=5V
VDD=3.3V
BW=22Hz to 20kHz
70u
60u
RL=32
2
1
Ω
RL=4
Ω
SE
50u
40u
0.5
Po=10mW
Vo BTL
Vo SE
0.2
0.1
%
V
30u
20u
0.05
Po=20mW
0.02
0.01
0.0 05
Po=30mW
0.0 02
0.0 01
10u
20
20
50
100
200
5 00
Hz
1k
2k
5 k
10 k
20k
50
100
2 00
500
Hz
1k
2 k
5k
10k
20k
Figure 33
Figure 34
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Global Mixed-mode Technology Inc.
Supply Ripple Rejection Ratio vs Frequency
Output Noise Voltage vs Frequency
10 0u
90u
80u
+0
T
VDD=3.3V
-10
-20
-30
BW=22Hz to 20kHz
70u
60u
VDD=5V
RL=4
RL=4
Ω
Ω
50u
40u
CB=4.7uF
Vo BTL
Vo SE
-40
-50
d
B
V
30u
20u
BTL
-60
-70
-80
-90
SE
10u
20
-100
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
50
100
200
500
Hz
1k
2k
5k
10k
20k
Figure 35
Figure 36
Crosstale vs Frequency
Supply Ripple Rejection Ratio vs Frequency
+0
-20
-25
T
-10
VDD=3.3V
RL=4
VDD=5V
Po=1.5W
-30
-35
-40
-45
-50
-55
-60
-65
Ω
-20
-30
RL=4
BTL
CB=4.7uF
Ω
-40
-50
d
B
d
B
BTL
L to R
-60
-70
-80
-90
-70
-75
-80
-85
-90
-95
R to L
SE
-100
20
-100
50
100
200
500
Hz
1k
2k
5k
10k
20k
20
50
100
200
500
Hz
1k
2k
5k
10k 20k
Figure 37
Figure 38
Crosstale vs Frequency
Crosstale vs Frequency
-30
-35
-40
-20
-25
VDD=3.3V
Po=0.75W
-30
-35
-40
VDD=5V
Po=75mW
-45
-50
RL=4
BTL
Ω
RL=32
Ω
-45
-50
-55
-55
-60
SE
d
B
d
B
-60
-65
-70
-75
-80
-85
-65
-70
R to L
L to R
-75
-80
-85
-90
-95
-90
-95
R to L
L to R
-100
-100
20
20
50
100
200
500
Hz
1k
2k
5k
10k 20k
50
100
200
500
Hz
1k
2k
5k
10k
20k
Figure 39
Figure 40
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G1420
Global Mixed-mode Technology Inc.
Closed Loop Response
Crosstale vs Frequency
-30
-35
-40
VDD=3.3V
Po=35mW
-45
-50
-55
-60
RL=32
Ω
SE
d
B
-65
-70
R to L
-75
-80
-85
-90
-95
L to R
-100
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
Figure 41
Figure 42
Closed Loop Response
Closed Loop Response
Figure 44
Figure 43
Closed Loop Response
Supply Current vs Supply Voltage
10
9
8
7
6
5
4
3
2
1
0
Stereo BTL
Stereo SE
3
4
5
6
Supply Voltage (V)
Figure 45
Figure 46
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G1420
Global Mixed-mode Technology Inc.
Output Power vs Supply Voltage
Output Power vs Supply Voltage
2.5
2
0.7
THD+N=1%
SE
Each Channel
THD+N=1%
BTL
Each Channel
0.6
0.5
0.4
0.3
0.2
0.1
0
RL=4
Ω
RL=8
Ω
1.5
1
RL=4
Ω
RL=3
Ω
RL=8
Ω
RL=32
5.5
Ω
0.5
0
2.5
3.5
4.5
5.5
6.5
2.5
3.5
4.5
6.5
Supply Voltage(V)
Supply Voltage (V)
Figure 48
Figure 47
Output Power vs Load Resistance
Output Power vs Load Resistance
2
1.8
1.6
1.4
1.2
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
THD+N=1%
BTL
Each Channel
VDD=5V
VDD=5V
THD+N=1%
SE
Each Channel
VDD=3.3V
0.8
0.6
0.4
0.2
0
VDD=3.3V
0
4
8
12
16
20
24
28
32
0
4
8
12
16
20
24
28
32
Load Resistance(Ω)
Load Resistance(Ω)
Figure 50
Figure 49
Power Dissipation vs Output Power
Power Dissipation vs Output Power
1.8
1.6
1.4
1.2
1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
RL=3
Ω
RL=3
Ω
RL=4
Ω
RL=4
Ω
0.8
0.6
0.4
0.2
0
VDD=5V
BTL
Each Channel
VDD=3.3V
BTL
Each Channel
RL=8
Ω
RL=8
Ω
0
0.5
1
1.5
2
2.5
0
0.25
0.5
0.75
1
Output Pow er(W)
Po-Output Pow er(W)
Figure 52
Figure 51
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Global Mixed-mode Technology Inc.
Power Dissipation vs Output Power
Power Dissipation vs Output Power
0.35
0.3
0.16
0.14
RL=4
Ω
0.12
0.1
RL=4
0.25
0.2
Ω
RL=8
Ω
0.08
0.06
0.04
0.02
0
0.15
0.1
RL=8
Ω
VDD=3.3V
SE
Each Channel
VDD=5V
SE
0.05
0
Each Channel
RL=32
Ω
RL=32
0.2
Ω
0
0.4
0.6
0.8
0
0.05
0.1
0.15
0.2
0.25
0.3
Output Pow er(W)
Output Pow er (W)
Figure 53
Figure 54
Recommended Minimum Footprint
TSSOP-24 (FD)
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G1420
Global Mixed-mode Technology Inc.
Pin Description
PIN
1,12,13,24
2
NAME
GND/HS
TJ
I/O
FUNCTION
Ground connection for circuitry, directly connected to thermal pad.
O
Source a current inversely to the junction temperature. This pin should be left uncon-
nected during normal operation. For more information, see the junction temperature
measurement section of this document.
3
4
5
LOUT+
LLINE IN
LHP IN
O
I
Left channel + output in BTL mode, + output in SE mode.
Left channel line input, selected when HP/ pin is held low.
I
Left channel headphone input, selected when HP/pin is held high.
6
7
8
LBYPASS
LVDD
Connect to voltage divider for left channel internal mid-supply bias.
Supply voltage input for left channel and for primary bias circuits.
Shutdown mode control signal input, places entire IC in shutdown mode when held
high, IDD = 5µA.
I
I
SHUTDOWN
9
MUTE OUT
LOUT-
O
O
I
Follows MUTE IN pin, provides buffered output.
10
11
14
15
16
Left channel - output in BTL mode, high impedance state in SE mode.
Mute control signal input, hold low for normal operation, hold high to mute.
Mode control signal input, hold low for BTL mode, hold high for SE mode.
MUTE IN
SE/BTL
ROUT-
I
O
I
Right channel - output in BTL mode, high impedance state in SE mode.
MUX control input, hold high to select headphone inputs (5,20), hold low to select line
inputs (4,21).
HP/LINE
17,23
NC
18
RVDD
I
Supply voltage input for right channel.
19
RBYPASS
RHP IN
RLINE IN
ROUT+
Connect to voltage divider for right channel internal mid-supply bias.
Right channel headphone input, selected when HP/pin is held high.
Right channel line input, selected when HP/pin is held low.
Right channel + output in BTL mode, + output in SE mode.
Recommend connecting the Thermal Pad to the GND for excellent power dissipation.
20
I
I
21
22
O
Thermal Pad
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Global Mixed-mode Technology Inc.
Block Diagram
20k
21
20
RLINEIN
RHPIN
_
+
22
15
ROUT+
ROUT-
RIGHT
MUX
RBYPASS
19
RVDD
18
MUTEIN
HP/LINE
SE/BTL
TJ
16
14
2
11
BIAS CIRCUITS
MODES CONTROL
CIRCUITS
MUTEOUT
SHUTDOWN
9
8
LVDD
7
6
LBYPASS
+
10
3
LOUT-
LOUT+
LHPIN
5
4
_
LEFT
MUX
LLINEIN
20k
Parameter Measurement Information
11
8
MUTEIN
HP/LINE
SE/BTL
SHUTDOWN
16
14
LVDD
7
RL 4/8/32ohm
6
LBYPASS
CB
4.7µF
LOUT-
LOUT+
10
3
+
5
4
LHPIN
CI
LEFT
MUX
_
LLINEIN
AC source
RI
RF
BTL Mode Test Circuit
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Global Mixed-mode Technology Inc.
Parameter Measurement Information (Continued)
11
8
MUTEIN
HP/LINE
SE/BTL
SHUTDOWN
16
14
VDD
LVDD
7
6
LBYPASS
CB
4.7µF
LOUT-
LOUT+
10
3
+
_
5
4
LHPIN
CI
LEFT
MUX
LLINEIN
AC source
RI
RL 32ohm
RF
SE Mode Test Circuit
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G1420
Global Mixed-mode Technology Inc.
Application Circuits
GND/HS
TJ
GND/HS
NC
1
2
24
23
LOUT+
ROUT+
3
4
22
21
RIL
CIL
RIR
CIR
1µF
LLINEIN
RLINEIN
RFL
20KΩ
CFR
AUDIO SOURCE
RFL 20KΩ
AUDIO SOURCE
CFL
10KΩ
10KΩ
1µF
LHPIN
RHPIN
LVDD
5
6
20
7
LBYPASS
RVDD
NC
RBYPASS
G1420
4.7µF
19
8
18
17
R
4.7µF
SHUTDWON
CSR
4.7µF
100KΩ
COUTR
220µF
MUTE OUT
LOUT-
HP/LINE
ROUT-
9
16
15
10
R
1
3
MUTE IN
GND/HS
SE/BTL
1KΩ
11
12
14
13
100KΩ
4
2
GND/HS
PHONOJACK
0.1µF
COUTR
220µF
1KΩ
Logical Truth Table
INPUTS
OUTPUT
Mute Out
----
AMPLIFIER STATES
Mute In
Shutdown
High
Input
L/R Out+
L/R Out-
Mode
Mute
Mute
Mute
SE/BTL
X
HP/LINE
X
X
X
----
X
X
X
----
----
VDD/2
----
Low
High
High
----
High
VDD/2
VDD/2
BTL
High
----
High
BTL
Low
Low
High
High
Low
High
Low
High
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
L/R Line
L/R HP
L/R Line
L/R HP
BTL
BTL
SE
Output
BTL
Output
BTL
Output
SE
Output
----
----
Output
SE
SE
Output
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Global Mixed-mode Technology Inc.
Application Information
Input MUX Operation
There are two input signal paths – HP & Line. With the
prompt setting, G1420 allows the setting of different
gains for BTL and SE modes. Generally, speakers
typically require approximately a factor of 10 more
gain for similar volume listening levels as compared
with headphones.
-3 dB
SE Gain(HP)
BTL Gain(LINE)
To achieve headphones and speakers listening parity,
(RF(LINE/RI(LINE)) is suggested to be 5 times of (RF(HP)
=
-(RF(HP)/RI(HP)
)
fc
=
-2(RF(LINE)/RI(LINE)
)
Figure B
/
RI(HP)). The ratio of (RF(HP)/RI(HP)) can be determined by
the applications. When the optimum distortion per-
formance into the headphones (clear sound) is impor-
tant, gain of –1 ((RF(HP) / RI(HP)) = 1) is suggested.
Bridged-Tied Load Mode Operation
G1420 has two linear amplifiers to drive both ends of
the speaker load in Bridged-Tied Load (BTL) mode
operation. Figure C shows the BTL configuration. The
differential driving to the speaker load means that
when one side is slewing up, the other side is slewing
down, and vice versa. This configuration in effect will
double the voltage swing on the load as compared to a
ground reference load. In BTL mode, the peak-to-peak
voltage VO(PP) on the load will be two times than a
ground reference configuration. The voltage on the
load is doubled, this will also yield 4 times output
power on the load at the same power supply rail and
loading. Another benefit of using differential driving
configuration is that BTL operation cancels the dc off-
sets, which eliminates the dc coupling capacitor that is
needed to cancelled dc offsets in the ground reference
configuration. Low-frequency performance is then lim-
ited only by the input network and speaker responses.
Cost and PCB space can be minimized by eliminating
the dc coupling capacitors.
Single Ended Mode Operation
G1420 can drive clean, low distortion SE output power
into headphone loads (generally 16Ω or 32Ω) as in
Figure A. Please refer to Electrical Characteristics to
see the performances. A coupling capacitor is needed
to block the dc offset voltage, allowing pure ac signals
into headphone loads. Choosing the coupling capaci-
tor will also determine the 3 dB point of the high-pass
filter network, as Figure B.
fC=1/(2πRLCC)
For example, a 68uF capacitor with 32Ω headphone
load would attenuate low frequency performance be-
low 73Hz. So the coupling capacitor should be well
chosen to achieve the excellent bass performance
when in SE mode operation.
VDD
VDD
Vo(PP)
Vo(PP)
RL
2xVo(PP)
-Vo(PP)
CC
VDD
Vo(PP)
RL
Figure A
Figure C
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MUTE and SHUTDOWN Mode Operations
G1420 implements the mute and shutdown mode
operations to reduce supply current, IDD, to the ab-
solute minimum level during nonuse periods for
battery-power conservation. When the shutdown
pin (pin 8) is pulled high, all linear amplifiers will be
deactivated to mute the amplifier outputs. And
G1420 enters an extra low current consumption
state, IDD is smaller than 5µA. If pulling mute-in pin
(pin 11) high, it will force the activated linear ampli-
fier to supply the VDD/2 dc voltage on the output to
mute the AC performance. In mute mode operation,
the current consumption will be a little different be-
tween BTL, SE. (SE < BTL) Typically, the supply
current is about 2.5mA in BTL mute operation.
Shutdown and Mute-In pins should never be left
unconnected, this floating condition will cause the
amplifier operations unpredictable.
VDD
100 kΩ
50 kΩ
Bypass
100 kΩ
Figure D
Junction Temperature Measurement
Characterizing a PCB layout with respect to thermal
impedance is very difficult, as it is usually impossi-
ble to know the junction temperature of the IC.
G1420 TJ (pin 2) sources a current inversely pro-
portional to the junction temperature. Typically TJ
sources–120µA for a 5V supply at 25°C. And the
slope is approximately 0.22µA/°C. As the resistors
have a tolerance of ±20%, these values should be
calibrated on each device. When the temperature
sensing function is not used, TJ pin can be left
floating or tied to VDD to reduce the current con-
sumption.
Optimizing DEPOP Operation
Circuitry has been implemented in G1420 to mini-
mize the amount of popping heard at power-up and
when coming out of shutdown mode. Popping oc-
curs whenever a voltage step is applied to the
speaker and making the differential voltage gener-
ated at the two ends of the speaker. To avoid the
popping heard, the bypass capacitor should be
chosen promptly, 1/(CBx100kΩ) ≦ 1/(CI*(RI+RF)).
Where 100kΩ is the output impedance of the
mid-rail generator, CB is the mid-rail bypass ca-
pacitor, CI is the input coupling capacitor, RI is the
input impedance, RF is the gain setting impedance
which is on the feedback path. CB is the most im-
portant capacitor. Besides it is used to reduce the
popping, CB can also determine the rate at which
the amplifier starts up during startup or recovery
from shutdown mode.
Temperature sensing circuit is shown on Figure E.
VDD
R
De-popping circuitry of G1420 is shown on Figure D.
The PNP transistor limits the voltage drop across
the 50kΩ by slewing the internal node slowly when
power is applied. At start-up, the voltage at
BYPASS capacitor is 0. The PNP is ON to pull the
mid-point of the bias circuit down. So the capacitor
sees a lower effective voltage, and thus the charg-
ing is slower. This appears as a linear ramp (while
the PNP transistor is conducting), followed by the
expected exponential ramp of an R-C circuit.
R
5R
TJ
Figure E
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G1420
Global Mixed-mode Technology Inc.
Package Information
D
24
L
D1
E
E1
E2
1
Note 5
A2
A1
e
b
TSSOP-24 (FD) Package
NOTE:
1. Package body sizes exclude mold flash protrusions or gate burrs
2. Tolerance ±0.1mm unless otherwise specified
3. Coplanarity : 0.1mm
4. Controlling dimension is millimeter. Converted inch dimensions are not necessarily exact.
5. Die pad exposure size is according to lead frame design.
6. Follow JEDEC MO-153
DIMENSION IN MM
DIMENSION IN INCH
SYMBOLS
MIN
-----
0.00
0.80
0.19
0.20
7.7
NOM
-----
MAX
1.20
0.15
1.05
0.30
-----
MIN
-----
NOM
-----
MAX
0.047
0.006
0.041
0.012
-----
A
A1
A2
b
-----
0.000
0.031
0.007
0.008
0.303
0.173
-----
1.00
0.039
-----
-----
C
-----
-----
D
7.8
7.9
0.307
-----
0.311
0.193
D1
E
4.4
-----
4.9
6.40 BSC
4.40
0.252 BSC
0.173
-----
E1
E2
e
4.30
2.7
4.50
3.2
0.169
0.106
0.177
0.126
-----
0.65 BSC
0.60
0.026 BSC
0.024
-----
L
0.45
0º
0.75
8º
0.018
0º
0.030
8º
θ
-----
Taping Specification
PACKAGE
Q’TY/REEL
TSSOP-24 (FD)
2,500 ea
Feed Direction
Typical TSSOP Package Orientation
GMT Inc. does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and GMT Inc. reserves the right at any time without notice to change said circuitry and specifications.
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