G1421 [GMT]
2W Stereo Audio Amplifier with No Headphone Coupling Capacitor Function; 2W立体声音频放大器，无耳机耦合电容功能
| 型号： | G1421 |
| 厂家： | 
GLOBAL MIXED-MODE TECHNOLOGY INC |
| 描述： | 2W Stereo Audio Amplifier with No Headphone Coupling Capacitor Function |
| 文件： | 总24页 (文件大小：432K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Global Mixed-mode Technology Inc.
G1421
2W Stereo Audio Amplifier with No Headphone
Coupling Capacitor Function
Features
General Description
Depop Circuitry Integrated
G1421 is a stereo audio power amplifier in 24pin
TSSOP thermal pad package. It can drive 1.8W con-
tinuous RMS power into 4Ω load per channel in
Bridge-Tied Load (BTL) mode at 5V supply voltage. Its
THD is smaller than 1% under the above operation
condition. To simplify the audio system design in the
notebook application, G1421 supports the Bridge-Tied
Load (BTL) mode for driving the speakers, Single-End
(SE) mode for driving the headphone. In the HP-IN
mode, it can support a DC value to the phone-jacket
and drive the headphone without the audio amplifier
outputs coupling capacitors. G1421 can mute the out-
put when Mute-In is activated. For the low current
consumption applications, the SHDN mode is sup-
ported to disable G1421 when it is idle. The current
consumption can be further reduced to below 5µA.
Output Power at 1% THD+N, VDD=5V
--1.8W/CH (typical) into a 4Ω Load
--1.2W/CH (typical) into a 8Ω Load
Eliminates Headphone Amplifier Output Cou-
pling Capacitors
Maximum Output Power Clamping Circuitry
Integrated
Bridge-Tied Load (BTL), Single-Ended (SE),
and Stereo Headphone Amplifier (HP-IN) modes
Supported
Stereo Input MUX
Mute and Shutdown Control Available
Surface-Mount Power Package
24-Pin TSSOP-P
G1421 also supports two input paths, that means two
different gain loops can be set in the same PCB and
Applications
Stereo Power Amplifiers for Notebooks or
Desktop Computers
choosing either one by setting HP/LINE pin. It en-
hances the hardware designing flexibility. G1421 also
supports an extra function -- the maximum output
power clamping function to protect the speakers or
headphones from burned-out.
Multimedia Monitors
Stereo Power Amplifiers for Portable Audio
Systems
Ordering Information
ORDER
NUMBER
G1421
ORDER NUMBER
(Pb free)
TEMP.
PACKAGE
RANGE
G1421f
-40°C to +85°C
TSSOP-24 (FD)
Note: U: Tape & Reel
(FD): Thermal Pad
Pin Configuration
G1421
GND/HS
VOL
GND/HS
24
23
1
TJ
LOUT+
LLINEIN
2
3
22 ROUT+
RLINEIN
4
5
6
21
20 RHPIN
LHPIN
LBYPASS
LVDD
Thermal
Pad
19 RBYPASS
18
17
16
RVDD
7
8
9
HP-IN
SHUTDOWN
MUTE OUT
LOUT-
HP/LINE
10
15 ROUT-
14 SE/BTL
MUTE IN 11
14
12
13
GND/HS
GND/HS
Top View
Bottom View
TSSOP-24 (FD)
Note: Recommend connecting the Thermal Pad to the GND for excellent power dissipation.
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
1
Global Mixed-mode Technology Inc.
G1421
Absolute Maximum Ratings
Supply Voltage, VDD……………………..………...…...6V
Input Voltage, VI………………………-0.3V to VDD+0.3V
Operating Ambient Temperature Range
TA…….…………………………..….…….-40°C to +85°C
Maximum Junction Temperature, TJ…..…………150°C
Storage Temperature Range, TSTG….…-65°C to+150°C
Reflow Temperature (soldering, 10sec)…………260°C
Power Dissipation (1)
TA ≤ 25°C…………………………………………..2.7W
TA ≤ 70°C…………………………………………..1.7W
TA ≤ 85°C………………….……………………….1.4W
Electrostatic Discharge, VESD
Human body mode
Lout- pin………………………..…………-8000 to 8000V
Other pins………………………………...-3000 to 3000(2)
Note:
(1) : Recommended PCB Layout.
(2) : Human body model : C = 100pF, R = 1500Ω, 3 positive pulses plus 3 negative pulses
Electrical Characteristics
DC Electrical Characteristics, TA=+25°C
PARAMETER
SYMBOL
CONDITION
HP-IN
MIN TYP MAX UNIT
VDD =3.3V
VDD = 5V
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---
---
---
---
5.5
6.5
7
11
14
13
8
HP-IN
Stereo BTL
Supply Current
IDD
VDD =3.3V
mA
Stereo SE
Stereo BTL
Stereo SE
3.5
8
16
10
50
16
14
10
5
V
DD = 5V
4
DC Differential Output Voltage
Supply Current in Mute Mode
IDD in Shutdown
VO(DIFF)
IDD(MUTE)
ISD
VDD = 5V,Gain = 2
5
mV
mA
µA
Stereo BTL
HP-IN
8
VDD = 5V
6.5
4
Stereo SE
VDD = 5V
2
(AC Operation Characteristics, VDD = 5.0V, TA=+25°C, RL = 4Ω, unless otherwise noted)
PARAMETER
SYMBOL
CONDITION
THD = 1%, BTL, RL = 4Ω
THD = 1%, BTL, RL = 8Ω
THD = 10%, BTL, RL = 4Ω
THD = 10%, BTL, RL = 8Ω
THD = 1%, SE, RL = 4Ω
THD = 1%, SE, RL = 8Ω
THD = 10%, SE, RL = 4Ω
THD = 10%, SE, RL L = 8Ω
THD = 0.5%, SE, RL = 32Ω
PO = 1.6W, BTL, RL = 4Ω
PO = 1W, BTL, RL = 8Ω
PO = 75mW, SE, RL = 32Ω
VI = 1V, RL = 10KΩ, G = 1
G = 1, THD =1%
MIN TYP MAX UNIT
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1.8
1.12
2
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W
1.4
500
320
650
400
90
Output power (each channel) see Note
P(OUT)
mW
m%
500
150
20
Total harmonic distortion plus noise
THD+N
10
Maximum output power bandwidth
Phase margin
BOM
20
kHz
°
dB
RL = 4Ω, Open Load
f = 120Hz
60
Power supply ripple rejection
Mute attenuation
PSRR
75
85
dB
Channel-to-channel output separation
Line/HP input separation
BTL attenuation in SE mode
Input impedance
f = 1kHz
82
dB
80
dB
85
dB
ZI
2
MΩ
dB
Signal-to-noise ratio
PO = 500mW, BTL
90
Output noise voltage
Vn
Output noise voltage
55
µV (rms)
Note :Output power is measured at the output terminals of the IC at 1kHz.
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
2
Global Mixed-mode Technology Inc.
(AC Operation Characteristics, VDD = 3.3V, TA=+25°C, RL = 4Ω, unless otherwise noted)
G1421
PARAMETER
SYMBOL
CONDITION
THD = 1%, BTL, RL = 4Ω
THD = 1%, BTL, RL = 8Ω
THD = 10%, BTL, RL = 4Ω
THD = 10%, BTL, RL = 8Ω
THD = 1%, SE, RL = 4Ω
THD = 1%, SE, RL = 8Ω
THD = 10%, SE, RL = 4Ω
THD = 10%, SE, RL L = 8Ω
THD = 0.5%, SE, RL = 32Ω
PO = 1.6W, BTL, RL = 4Ω
PO = 1W, BTL, RL = 8Ω
PO = 75mW, SE, RL = 32Ω
VI = 1V, RL = 10KΩ, G = 1
G = 1, THD 1%
MIN TYP MAX UNIT
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0.8
0.5
1
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W
0.6
230
140
290
180
43
Output power (each channel) see Note
P(OUT)
mW
270
100
20
Total harmonic distortion plus noise
THD+N
m%
10
Maximum output power bandwidth
Phase margin
BOM
20
kHz
°
dB
RL = 4Ω, Open Load
f = 120Hz
60
Power supply ripple rejection
Mute attenuation
PSRR
75
85
dB
Channel-to-channel output separation
Line/HP input separation
BTL attenuation in SE mode
Input impedance
f = 1kHz
80
dB
80
dB
85
dB
ZI
2
MΩ
dB
Signal-to-noise ratio
PO = 500mW, BTL
90
Output noise voltage
Vn
Output noise voltage
55
µV (rms)
Note :Output power is measured at the output terminals of the IC at 1kHz.
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
3
Global Mixed-mode Technology Inc.
G1421
Typical Characteristics
Table of Graphs
FIGURE
vs Output Power
vs Frequency
1,3,6,9,10,13,16,19,22,25,26,27,33,36,39
THD +N Total Harmonic Distortion Plus Noise
Output Noise Voltage
2,4,5,7,8,11,12,14,15,17,18,20,21,23,24,28,29
30,31,32,34,35,37,38,40,41
42,43,44
vs Frequency
Supply Ripple Rejection Ratio
vs Frequency
45,46,47
Vn
Crosstalk
vs Frequency
48,49,50,51,52
53,54,55,56
57
Closed loop Response
IDD Supply Current
vs Frequency
vs Supply Voltage
vs Supply Voltage
vs Load Resistance
vs Output Power
58,59
PO Output Power
60,61
PD Power Dissipation
62,63,64,65
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
20kHz
2
2
1
1
Po=1.8W
1kHz
0.5
0.5
%
%
0.2
0.2
0.1
VDD=5V
Po=1.5W
0.1
RL=3
BTL
20 Hz
Ω
VDD=5V
0.05
0.05
RL=3
Ω
Av=-2V/V
BTL
0.02
0.01
0.02
0.01
3m
5 m
10 m
20m
5 0m
100m
W
20 0m
500 m
1
2
3
20
50
10 0
2 00
5 00
Hz
1k
2 k
5 k
10 k
20k
Figure 1
Figure 2
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
Av=-4V/V
20kHz
2
1
2
1
Av=-2V/V
0.5
0.5
1kHz
%
%
0.2
0.1
0.2
0.1
VDD=5V
Av=-1V/V
VDD=5V
20 Hz
RL=4
BTL
Po=1.5W
Ω
0.05
0.05
RL=4
BTL
Ω
0.02
0.01
0.02
0.01
3m
5 m
10 m
20m
50m
100m
W
20 0m
500 m
1
2
3
20
50
10 0
2 00
5 00
Hz
1k
2 k
5 k
10 k
20k
Figure 3
Figure 4
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
4
Global Mixed-mode Technology Inc.
G1421
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
VDD=5V
VDD=5V
5
RL=8
BTL
Av=-2V/V
Ω
RL=4
BTL
Av=-2V/V
Ω
20kHz
Po=1.5W
2
1
2
1
Po=0.25W
0.5
0.5
%
%
0.2
0.1
0.2
0.1
1kHz
0.05
0.05
Po=0.75W
20Hz
0.02
0.01
0.02
0.01
20
50
100
200
500
Hz
1k
2 k
5k
10k
20k
3m
5 m
10m
20m
50m
100m
W
20 0m
500 m
1
2
3
Figure 5
Figure 6
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=5V
VDD=5V
RL=8
BTL
RL=8
Ω
Av=-4V/V
Ω
Po=1W
2
1
2
1
BTL
Av=-2V/V
Po=1W
Po=0.25W
0.5
0.5
Av=-2V/V
%
%
0.2
0.1
0.2
0.1
Po=0.5W
0.05
0.05
Av=-1V/V
0.02
0.01
0.02
0.01
20
50
100
200
500
Hz
1k
2 k
5k
10k
20k
20
50
10 0
2 00
5 00
Hz
1k
2 k
5 k
10k
20k
Figure 8
Figure 7
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
5
20kHz
1kHz
20kHz
2
1
2
1
1kHz
0.5
0.5
%
%
0.2
0.1
0.2
0.1
VDD=3.3V
VDD=3.3V
20Hz
RL=4
Ω
0.05
0.05
RL=3
20Hz
Ω
BTL
BTL
0.02
0.01
0.02
0.01
1m
2m
5m
10m
20m
50m
100m
200 m
500 m
1
1m
2m
5m
10m
20 m
50 m
100m
2 00 m
500 m
1
W
W
Figure 9
Figure 10
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
5
Global Mixed-mode Technology Inc.
G1421
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=3.3V
VDD=3.3V
RL=4
BTL
Ω
Av=-4V/V
RL=4
BTL
Ω
2
1
2
1
Av=-2V/V
Po=0.7W
Av=-2V/V
Po=0.65W
0.5
0.5
%
%
Po=0.1W
0.2
0.1
0.2
0.1
Po=0.35W
Av=-1V/V
0.05
0.05
0.02
0.01
0.02
0.01
20
50
100
200
5 00
Hz
1k
2k
5 k
10k
20k
20
50
100
200
500
Hz
1k
2k
5k
10 k
20k
Figure 12
Figure 11
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
10
5
VDD=3.3V
5
VDD=3.3V
RL=8
BTL
Ω
RL=8
BTL
Ω
20kHz
2
1
Av=-4V/V
2
1
Po=0.4W
Av=-2V/V
0.5
0.5
%
%
1kHz
0.2
0.1
0.2
0.1
0.05
0.05
Av=-1V/V
20Hz
0.02
0.01
0.02
0.01
20
50
100
200
500
Hz
1k
2 k
5k
10 k
20k
1m
2m
5m
1 0m
20 m
50m
10 0m
200m
500m
1
W
Figure 13
Figure 14
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
5
VDD=5V
VDD=3.3V
RL=4
Ω
RL=8
BTL
Ω
SE
2
1
2
1
Po=0.4W
Av=-2V/V
20kHz
1kHz
0.5
0.5
%
%
Po=0.1W
0.2
0.1
0.2
0.1
0.05
0.05
Po=0.25W
100Hz
0.02
0.01
0.02
0.01
20
50
100
200
500
Hz
1k
2k
5k
10 k
20k
1m
2m
5m
10m
20m
50m
10 0m
2 00 m
500m
1
W
Figure 15
Figure 16
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
6
Global Mixed-mode Technology Inc.
G1421
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
VDD=5V
5
VDD=5V
RL=4
RL=4
Ω
Ω
2
1
2
1
SE
Av=-4V/V
SE
Av=-2V/V
Po=0.4W
Po=0.5W
0.5
0.5
Av=-2V/V
%
%
0.2
0.1
0.2
0.1
Po=0.1W
0.05
0.05
Av=-1V/V
Po=0.25W
0.02
0.01
0.02
0.01
20
50
100
200
5 00
Hz
1k
2k
5k
10k
20k
20
50
100
2 00
5 00
Hz
1k
2k
5 k
10k
20k
Figure 17
Figure 18
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
5
VDD=5V
VDD=5V
RL=8
Ω
RL=8
Ω
2
1
2
1
SE
SE
Po=0.25W
20kHz
0.5
0.5
Av=-2V/V
%
%
0.2
0.1
0.2
0.1
Av=-4V/V
1kHz
0.05
0.05
100Hz
0.02
0.01
0.02
0.01
Av=-1V/V
20
50
10 0
200
500
Hz
1k
2k
5k
10 k
20k
1m
2m
5m
10m
20m
50 m
100m
2 00m
500m
1
W
Figure 20
Figure 19
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=5V
VDD=5V
2
1
RL=8
SE
Ω
RL=32
Ω
2
1
SE
0.5
Av=-2
20kHz
0.2
0.1
0.5
Po=0.05W
Po=0.25W
%
%
20Hz
0.2
0.1
0.05
0.02
0.01
Po=0.1W
0.05
0.005
1kHz
0.02
0.01
0.002
0.001
1m
2m
5m
10 m
20m
50m
10 0m
200m
20
50
10 0
200
500
Hz
1k
2 k
5k
10 k
20k
W
Figure 21
Figure 22
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
7
Global Mixed-mode Technology Inc.
G1421
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
10
5
5
VDD=5V
VDD=5V
2
1
RL=32
SE
Po=75mW
2
1
Ω
RL=32
Ω
SE
0.5
0.5
Av=-4V/V
Po=25mW
0.2
0.1
0.2
0.1
%
%
%
%
0.05
Av=-2V/V
0.05
Po=50mW
0.02
0.01
0.02
0.01
0.0 05
0.005
Av=-1V/V
Po=75mW
0.0 02
0.0 01
0.002
0.001
20
50
100
200
5 00
Hz
1k
2k
5 k
10k
20k
20
50
100
200
500
Hz
1k
2k
5k
10 k
20k
Figure 23
Figure 24
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
5
VDD=5V
RL=8
HP-IN
Av=-2V/V
VDD=5V
Ω
RL=4
HP-IN
Ω
2
1
2
1
20kHz
Av=-2V/V
0.5
0.5
20kHz
%
0.2
0.1
0.2
0.1
1kHz
1kHz
0.05
0.05
0.02
0.01
0.02
0.01
100Hz
100Hz
1m
2m
5m
1 0m
20 m
50m
10 0m
200m
500m
1
1m
2m
5m
10m
20m
50m
100m
200m
5 00m
1
W
W
Figure 26
Figure 25
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Power
10
5
10
5
VDD=5V
RL=4
VDD=5V
RL=32
HP-IN
Av=-2V/V
2
1
Ω
Ω
2
1
HP-IN
Po=0.5W
Av=-4V/V
0.5
20kHz
0.2
0.1
0.5
%
Av=-2V/V
0.05
0.2
0.1
1kHz
0.02
0.01
0.05
0.005
Av=-1V/V
100Hz
0.02
0.01
0.002
0.001
1m
2m
5m
10m
20m
W
50m
100m
200m
500m
20
50
100
200
500
Hz
1 k
2 k
5k
10 k
20k
Figure 27
Figure 28
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
8
Global Mixed-mode Technology Inc.
G1421
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=5V
RL=4
HP-IN
VDD=5V
RL=8
HP-IN
Po=0.25W
Ω
Ω
2
1
2
1
Av=-2V/V
Po=0.25W
0.5
0.5
Av=-4V/V
%
%
0.2
0.1
0.2
0.1
Po=0.1W
Av=-2V/V
0.05
0.05
Po=0.4W
0.02
0.01
0.02
0.01
Av=-1V/V
20
50
100
200
500
Hz
1k
2k
5k
10 k
20k
20
50
100
200
500
Hz
1 k
2 k
5k
10 k
10k
10k
20k
20k
20k
Figure 29
Figure 30
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=5V
VDD=5V
2
1
RL=8
Ω
RL=32
HP-IN
Ω
2
1
HP-IN
Av=-2V/V
Po=0.1W
Po=25mW
0.5
Av=-2V/V
0.2
0.1
0.5
%
%
0.2
0.1
0.05
Po=50mW
0.02
0.01
0.05
Po=0.05W
0.0 05
Po=70mW
0.02
0.01
Po=0.25W
0.0 02
0.0 01
20
50
100
200
500
Hz
1k
2k
5k
10 k
20k
20
50
100
200
5 00
Hz
1k
2k
5k
Figure 31
Figure 32
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=3.3V
VDD=3.3V
RL=4 ,SE
Ω
RL=4
Ω
Av=-2
2
1
2
1
SE
Po=0.2W
20kHz
Av=-4V/V
0.5
0.5
%
%
Av=-2V/V
0.2
0.1
0.2
0.1
1kHz
0.05
0.05
Av=-1V/V
100Hz
0.02
0.01
0.02
0.01
1m
2m
5m
10m
20m
50m
100m
2 00m
500m
1
20
50
10 0
200
500
Hz
1k
2k
5k
W
Figure 33
Figure 34
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Global Mixed-mode Technology Inc.
G1421
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Power
10
10
R
R
5
VDD=3.3V
RL=8 ,SE
Av=-2
5
VDD=3.3V
Ω
RL=4
Ω
2
1
2
1
Po=50mW
SE
Av=-2
20kHz
0.5
0.5
%
%
0.2
0.1
0.2
0.1
Po=100mW
1kHz
0.05
0.05
0.02
0.01
0.02
0.01
Po=150mW
100Hz
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
1m
2m
5m
10m
20 m
50m
100m
200m
W
Figure 35
Figure 36
Total Harmonic Distortion Plus
Noise vs Output Frequency
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=3.3V
VDD=3.3V
RL=8
Ω
RL=8
Ω
2
1
2
1
SE
SE
Po=100mW
Po=25mW
Av=-4V/V
0.5
0.5
%
%
0.2
0.1
0.2
0.1
Po=50mW
Av=-2V/V
0.05
0.05
0.02
0.01
0.02
0.01
Av=-1V/V
Po=100mW
20
50
10 0
200
5 00
Hz
1k
2k
5 k
10k
20k
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
Figure 38
Figure 37
Total Harmonic Distortion Plus
Noise vs Output Power
Total Harmonic Distortion Plus
Noise vs Output Frequency
10
5
10
5
VDD=3.3V
VDD=3.3V
2
1
RL=32
Ω
RL=32
SE
Ω
1kHz
2
1
SE
Av=-4V/V
0.5
Po=30mW
0.2
0.1
0.5
20kHz
Av=-2V/V
%
%
0.2
0.1
0.05
0.02
0.01
20Hz
0.05
0.005
Av=-1V/V
0.02
0.01
0.002
0.001
1m
2m
5m
10m
W
20m
50m
100m
20
50
100
2 00
500
Hz
1k
2k
5k
10k
20k
Figure 39
Figure 40
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Global Mixed-mode Technology Inc.
G1421
Total Harmonic Distortion Plus
Noise vs Output Frequency
Output Noise Voltage
vs Frequency
10
5
100u
90u
80u
VDD=3.3V
VDD=5V
BW=22Hz to 20kHz
70u
60u
RL=32
2
1
Ω
RL=4
Ω
SE
50u
40u
0.5
Po=10mW
0.2
0.1
Vo BTL
Vo SE
%
V
30u
20u
0.05
Po=20mW
0.02
0.01
0.005
Po=30mW
0.002
0.001
10u
20
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
50
10 0
200
5 00
Hz
1k
2k
5 k
10k
20k
Figure 41
Figure 42
Output Noise Voltage
vs Frequency
Output Noise Voltage
vs Frequency
100u
90u
80u
100u
90u
VDD=3.3V
80u
70u
BW=22Hz to 20kHz
Vo BTL
70u
60u
RL=4
Ω
60u
50u
50u
40u
BW=22Hz to 20kHz
A- Weighted Filter
40u
30u
V
V
30u
20u
VDD=5V
HP-IN
20u
Vo SE
RL=4
Ω
10u
20
10u
20
5 0
1 00
200
500
Hz
1k
2k
5k
10k
20k
50
100
200
5 00
Hz
1k
2k
5 k
10k
20k
Figure 43
Figure 44
Supply Ripple Rejection
Ratio vs Frequency
Supply Ripple Rejection
Ratio vs Frequency
+0
+0
T
T
T
T
-10
-20
-30
-10
-20
-30
VDD=5V
VDD=5V
HP-IN
RL=4
RL=4
Ω
CB=4.7uF
Ω
-40
-50
-40
-50
CB=4.7uF
d
B
d
B
BTL
-60
-70
-80
-90
-60
-70
-80
-90
SE
-100
20
-100
20
5 0
1 00
2 00
500
1k
2k
5k
10k
20k
5 0
1 00
200
500
Hz
1k
2k
5k
10k
20k
Hz
Figure 45
Figure 46
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Global Mixed-mode Technology Inc.
G1421
Supply Ripple Rejection
Ratio vs Frequency
Crosstalk vs Frequency
+0
-20
-25
T
-10
-20
-30
VDD=3.3V
RL=4
VDD=5V
Po=1.5W
-30
-35
Ω
-40
-45
RL=4
BTL
CB=4.7uF
Ω
-50
-55
-60
-40
-50
d
B
d
B
BTL
L to R
-65
-70
-75
-60
-70
-80
-90
-80
-85
R to L
SE
-90
-95
-100
20
-100
50
100
200
500
Hz
1k
2k
5k
10k
20k
20
50
100
200
500
Hz
1k
2k
5k
10k 20k
Figure 47
Figure 48
Crosstalk vs Frequency
Crosstalk vs Frequency
-30
-35
-40
-20
-25
VDD=3.3V
Po=0.75W
VDD=5V
Po=75mW
-30
-35
-40
-45
-50
-45
-50
-55
-60
RL=4
Ω
RL=32
Ω
BTL
SE
-55
-60
-65
-70
-75
-80
-85
-90
-95
-100
d
B
d
B
-65
-70
R to L
L to R
R to L
-75
-80
-85
-90
-95
L to R
-100
20
20
50
100
200
500
Hz
1k
2k
5k
10k 20k
50
100
200
500
Hz
1k
2 k
5k
10k
20k
Figure 49
Figure 50
Crosstalk vs Frequency
Crosstalk vs Frequency
-30
-35
-40
-2 0
-2 5
VDD=3.3V
Po=35mW
-3 0
-3 5
VDD=5V
Po=75mW
RL=32Ω
HP-IN
-45
-50
RL=32
Ω
-4 0
-4 5
SE
R to L
-55
-60
-5 0
-5 5
d
B
d
B
-65
-70
-6 0
-6 5
R to L
L to R
-7 0
-7 5
-75
-80
-85
-8 0
-8 5
-90
-95
-9 0
-9 5
L to R
-100
20
-100
20
50
10 0
20 0
50 0
Hz
1k
2 k
5k
10 k
20k
50
100
200
500
Hz
1k
2k
5k
10k
20 k
Figure 52
Figure 51
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Global Mixed-mode Technology Inc.
G1421
Closed Loop Response
Closed Loop Response
Figure 54
Figure 53
Closed Loop Response
Closed Loop Response
Figure 55
Figure 56
Supply Current vs Supply Voltage
Output Power vs Supply Voltage
10
9
8
7
6
5
4
3
2
1
0
2.5
2
THD+N=1%
BTL
Each Channel
Stereo BTL
RL=4
Ω
1.5
1
RL=3
Ω
RL=8
Ω
Stereo SE
0.5
0
3
4
5
6
2.5
3.5
4.5
5.5
6.5
Supply Voltage (V)
Supply Voltage (V)
Figure 58
Figure 57
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Global Mixed-mode Technology Inc.
G1421
Output Power vs Supply Voltage
Output Power vs Load Resistance
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2
1.8
1.6
1.4
1.2
1
THD+N=1%
SE
Each Channel
THD+N=1%
BTL
Each Channel
VDD=5V
RL=8
Ω
RL=4
Ω
VDD=3.3V
0.8
0.6
0.4
0.2
0
RL=32
5.5
Ω
2.5
3.5
4.5
6.5
0
4
8
12
16
20
24
28
32
Supply Voltage(V)
Figure 59
Load Resistance(Ω)
Figure 60
Output Power vs Load Resistance
Power Dissipation vs Output Power
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.8
1.6
1.4
1.2
1
THD+N=1%
SE
Each Channel
VDD=5V
RL=3
Ω
RL=4
0.8
0.6
0.4
0.2
0
Ω
VDD=5V
BTL
Each Channel
RL=8
Ω
VDD=3.3V
0
4
8
12
16
20
24
28
32
0
0.5
1
1.5
2
2.5
Po-Output Pow er(W)
Load Resistance(Ω)
Figure 62
Figure 61
Power Dissipation vs Output Power
Power Dissipation vs Output Power
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.35
0.3
RL=3
Ω
RL=4
Ω
0.25
0.2
RL=4
Ω
RL=8
Ω
0.15
0.1
VDD=5V
SE
Each Channel
RL=8
VDD=3.3V
BTL
Each Channel
Ω
0.05
0
RL=32
Ω
0
0.25
0.5
0.75
1
0
0.2
0.4
0.6
0.8
Output Pow er(W)
Output Pow er(W)
Figure 63
Figure 64
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Global Mixed-mode Technology Inc.
G1421
Recommended Minimum Footprint
TSSOP-24 (FD)
Power Dissipation vs Output Power
0.16
0.14
0.12
0.1
RL=4
Ω
VDD=3.3V
SE
0.08
0.06
0.04
0.02
0
Each Channel
RL=8
Ω
RL=32
Ω
0
0.05
0.1
0.15
0.2
0.25
0.3
Output Pow er (W)
Figure 65
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Global Mixed-mode Technology Inc.
G1421
Pin Description
PIN
1,12,13,24
2
NAME
GND/HS
TJ
I/O
FUNCTION
Ground connection for circuitry, directly connected to thermal pad.
O
Source a current inversely to the junction temperature. This pin should be left uncon-
nected during normal operation. For more information, see the junction temperature
measurement section of this document.
3
4
5
LOUT+
LLINE IN
LHP IN
O
I
Left channel + output in BTL mode, + output in SE mode.
Left channel line input, selected when HP/ pin is held low.
I
Left channel headphone input, selected when HP/pin is held high.
6
7
8
LBYPASS
LVDD
Connect to voltage divider for left channel internal mid-supply bias.
Supply voltage input for left channel and for primary bias circuits.
Shutdown mode control signal input, places entire IC in shutdown mode when held
high, IDD = 5µA.
I
I
SHUTDOWN
9
MUTE OUT
LOUT-
O
O
Follows MUTE IN pin, provides buffered output.
10
Left channel - output in BTL mode, high impedance state in SE mode. Supply VDD/2 to
the phone jacket in HP-IN mode.
11
14
15
16
MUTE IN
SE/
I
I
Mute control signal input, hold low for normal operation, hold high to mute.
Mode control signal input, hold low for BTL mode, hold high for SE mode.
Right channel - output in BTL mode, high impedance state in SE mode.
MUX control input, hold high to select headphone inputs (5,20), hold low to select line
inputs (4,21).
ROUT-
HP/
O
I
17
HP-IN
This pin can activate the HP-IN mode to supplied the VDD/2 at LOUT- onto the phone
jacket. So the DC blocking capacitors can be removed in HP-IN type (like SE mode
except no DC blocking capacitors). Hold high to activate this function. If this function is
not used, it should be strongly tied to low.
18
19
20
21
22
23
RVDD
RBYPASS
RHP IN
RLINE IN
ROUT+
VOL
I
Supply voltage input for right channel.
Connect to voltage divider for right channel internal mid-supply bias.
Right channel headphone input, selected when HP/pin is held high.
Right channel line input, selected when HP/pin is held low.
I
I
O
I
Right channel + output in BTL mode, + output in SE mode.
The output power can be clamped by setting a low bound voltage to this pin. The high
bound voltage will be generated internally. The output voltage will be clamped between
high/low bound voltages. Then the output power is limited. It is weakly pull-low inter-
nally, let this pin floating or tied to GND can deactivate this function.
Recommend connecting the Thermal Pad to the GND for excellent power dissipation.
Thermal Pad
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Global Mixed-mode Technology Inc.
G1421
Block Diagram
20k
21
20
RLINEIN
RHPIN
_
+
22
15
ROUT+
ROUT-
RIGHT
MUX
RBYPASS
19
RVDD
HP-IN
18
17
16
14
2
MUTEIN
11
MUTEOUT
SHUTDOWN
VOL
HP/LINE
SE/BTL
TJ
9
8
BIAS CIRCUITS
MODES CONTROL
CIRCUITS
23
LVDD
7
6
LBYPASS
+
10
3
LOUT-
LOUT+
LHPIN
5
4
_
LEFT
MUX
LLINEIN
20k
Parameter Measurement Information
11
HP-IN
17
16
MUTEIN
HP/LINE
8
SHUTDOWN
VOL
14
7
23
SE/BTL
LVDD
RL 4/8/32ohm
6
LBYPASS
CB
4.7µF
LOUT-
LOUT+
10
3
+
_
5
4
LHPIN
CI
LEFT
MUX
LLINEIN
AC source
RI
RF
BTL Mode Test Circuit
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Global Mixed-mode Technology Inc.
G1421
Parameter Measurement Information (Continued)
11
HP-IN
17
MUTEIN
HP/LINE
8
SHUTDOWN
VOL
16
14
VDD
23
SE/BTL
LVDD
7
6
LBYPASS
CB
4.7µF
LOUT-
LOUT+
10
3
+
_
5
4
LHPIN
CI
LEFT
MUX
LLINEIN
AC source
RI
RL 32ohm
RF
SE Mode Test Circuit
VDD
11
HP-IN
17
MUTEIN
HP/LINE
8
SHUTDOWN
VOL
16
14
23
SE/BTL
LVDD
7
6
LBYPASS
CB
4.7µF
LOUT-
LOUT+
10
3
+
RL 32ohm
5
4
LHPIN
CI
LEFT
MUX
_
LLINEIN
AC source
RI
RF
HP-IN Mode (Non-DC Blocking Cap) Test Circuit
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Global Mixed-mode Technology Inc.
G1421
Application Circuits
With DC blocking Capacitors Application
GND/HS
TJ
GND/HS
VOL
1
2
24
23
LOUT+
ROUT+
3
4
22
21
RIL
CIL
RIR
CIR
1µF
LLINEIN
RLINEIN
RFL
20KΩ
CFR
AUDIO SOURCE
RFL 20KΩ
AUDIO SOURCE
CFL
10KΩ
10KΩ
1µF
LHPIN
RHPIN
LVDD
5
6
20
7
LBYPASS
RVDD
HP-IN
RBYPASS
G1421
4.7µF
19
8
18
17
R
4.7µF
SHUTDWON
CSR
4.7µF
100KΩ
COUTR
220µF
MUTE OUT
LOUT-
HP/LINE
ROUT-
9
16
15
10
R
1
3
MUTE IN
GND/HS
SE/BTL
GND/HS
1KΩ
11
12
14
13
100KΩ
4
2
PHONOJACK
0.1µF
COUTR
220µF
1KΩ
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Global Mixed-mode Technology Inc.
G1421
Application Circuits (Continued)
No DC Blocking Capacitors Application
GND/HS
1
GND/HS
VOL
24
23
TJ
2
LOUT+
3
ROUT+
22
21
CIR
RIR
CIL
RIL
RLINEIN
LLINEIN
RFL
20KΩ
RFR
20KΩ
CFR
AUDIO SOURCE
CFL
4
RC
4.7Ω
10KΩ
1µF
10KΩ
1µF
AUDIO SOURCE
LHPIN
5
6
RHPIN
LVDD
20
7
CC
0.1µF
LBYPASS
RVDD
HP-IN
G1421
RBYPASS
CBL
4.7µF
4.7µF
19
8
18
17
SHUTDWON
4.7µF
MUTE OUT
LOUT-
HP/LINE
ROUT-
9
16
15
1
2
10
3
4
MUTE IN
GND/HS
SE/BTL
11
12
14
13
RC
4.7Ω
5
GND/HS
PHONOJACK
CC
0.1µF
Logical Truth Table
INPUTS
OUTPUT
AMPLIFIER STATES
Input L/R Out+ L Out- R Out- Mode
HP-IN Mute In Shutdown Mute Out
SE/BTL HP/LINE
X
Low
High
X
X
X
X
X
X
X
----
High
----
----
X
X
X
X
----
VDD/2
VDD/2
VDD/2
BTL
----
----
VDD/2
----
Mute
Mute
Mute
Mute
High
High
High
High
High
High
VDD/2
----
X
----
High
----
VDD/2
BTL
----
BTL
Low
Low
High
High
X
Low
High
Low
High
Low
High
Low
Low
Low
Low
High
High
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
L/R Line
L/R HP
L/R Line
L/R HP
L/R Line
L/R HP
BTL
BTL
Output
BTL
Output
BTL
Output
BTL
Output
SE
Output
Output
----
----
----
----
----
----
SE
Output
SE
SE
Output
SE
VDD/2
VDD/2
HP-IN
HP-IN
Output
SE
X
Output
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Global Mixed-mode Technology Inc.
G1421
Application Information
Input MUX Operation
There are two input signal paths – HP & Line. With the
prompt setting, G1421 allows the setting of different
gains for BTL and SE modes. Generally, speakers
typically require approximately a factor of 10 more
gain for similar volume listening levels as compared
with headphones.
-3 dB
SE Gain(HP)
BTL Gain(LINE)
To achieve headphones and speakers listening parity,
(RF(LINE/RI(LINE)) is suggested to be 5 times of (RF(HP)
=
-(RF(HP)/RI(HP)
)
fc
=
-2(RF(LINE)/RI(LINE)
)
Figure B
/
RI(HP)). The ratio of (RF(HP)/RI(HP)) can be determined by
the applications. When the optimum distortion per-
formance into the headphones (clear sound) is impor-
tant, gain of –1 ((RF(HP) / RI(HP)) = 1) is suggested.
Bridged-Tied Load Mode Operation
G1421 has two linear amplifiers to drive both ends of
the speaker load in Bridged-Tied Load (BTL) mode
operation. Figure C shows the BTL configuration. The
differential driving to the speaker load means that
when one side is slewing up, the other side is slewing
down, and vice versa. This configuration in effect will
double the voltage swing on the load as compared to a
ground reference load. In BTL mode, the peak-to-peak
voltage VO(PP) on the load will be two times than a
ground reference configuration. The voltage on the
load is doubled, this will also yield 4 times output
power on the load at the same power supply rail and
loading. Another benefit of using differential driving
configuration is that BTL operation cancels the dc off-
sets, which eliminates the dc coupling capacitor that is
needed to cancelled dc offsets in the ground reference
configuration. Low-frequency performance is then lim-
ited only by the input network and speaker responses.
Cost and PCB space can be minimized by eliminating
the dc coupling capacitors.
Single Ended Mode Operation
G1421 can drive clean, low distortion SE output power
into headphone loads (generally 16Ω or 32Ω) as in
Figure A. Please refer to Electrical Characteristics to
see the performances. A coupling capacitor is needed
to block the dc offset voltage, allowing pure ac signals
into headphone loads. Choosing the coupling capaci-
tor will also determine the 3 dB point of the high-pass
filter network, as Figure B.
fC=1/(2πRLCC)
For example, a 68uF capacitor with 32Ω headphone
load would attenuate low frequency performance be-
low 73Hz. So the coupling capacitor should be well
chosen to achieve the excellent bass performance
when in SE mode operation.
VDD
VDD
Vo(PP)
Vo(PP)
RL
2xVo(PP)
-Vo(PP)
CC
VDD
Vo(PP)
RL
Figure A
Figure C
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
21
Global Mixed-mode Technology Inc.
G1421
HP-IN Mode Operation
MUTE and SHUTDOWN Mode Operations
G1421 implements the mute and shutdown mode
operations to reduce supply current, IDD, to the ab-
solute minimum level during nonuse periods for
battery-power conservation. When the shutdown
pin (pin 8) is pulled high, all linear amplifiers will be
deactivated to mute the amplifier outputs. And
G1421 enters an extra low current consumption
state, IDD is smaller than 5µA. If pulling mute-in pin
(pin 11) high, it will force the activated linear ampli-
fier to supply the VDD/2 dc voltage on the output to
mute the AC performance. In mute mode operation,
the current consumption will be a little different be-
tween BTL, SE and HP-IN modes. (SE < HP-IN <
BTL) Typically, the supply current is about 2.5mA in
BTL mute operation. Shutdown and Mute-In pins
should never be left unconnected, this floating con-
dition will cause the amplifier operations unpredict-
able.
An internal weakly pull-up circuit is connected to
HP-IN control pin (pin 17). When this pin is left un-
connected or tied to VDD, HP-IN mode is activated,
ignoring SE/ BTL setting. In normal SE/ BTL mode
operations, this HP-IN pin should be tied to GND. In
HP-IN mode, the linear amplifiers of LOUT+ (pin 3)
/ROUT+ (pin 22) are still alive, the linear amplifier of
ROUT- (pin 15) is deactivated, the linear amplifier of
LOUT- (pin 10) supplies VDD/2 on this pin to cancel
the dc offsets. (Please refer to Logical Truth Table and
No DC CAP Application Circuit for detailed operation.)
If connected VDD/2 on the LOUT- (pin 10) to the
phone jacket, the dc offset can be eliminated without
using coupling capacitors in headphone applications.
By using HP-IN mode, cost and PCB space can be
further minimized than traditional headphone applica-
tions with coupling capacitors. The HP-IN configura-
tion is shown on Figure D.
Maximum Power Clampping Function
G1421 supports the maximum output power clamping
function to avoid damaging the speaker when the am-
plifier output a power beyond the speaker tolerance.
The Vol pin (pin 23) is weakly pull-low internally. If
inputting a non-zero voltage (low boundary voltage) to
the Vol pin, G1421 will generate a high boundary
voltage which the difference between the VDD/2 and
the high boundary voltage is the same as the differ-
ence between the VDD/2 and the low boundary volt-
age. ( i.e. VOH – VDD/2 = VDD/2 – VOL ) Then the out-
puts of linear amplifiers will be effectively limited be-
tween the high/low boundary voltage, the maximum
output power is clamped. By setting the voltage of Vol,
the maximum output power can be well controlled.
When the maximum power clamping function is not
used, the Vol pin should be floated or tied to GND.
VDD
Vo(PP)+VDD/2
RL
Vo(PP)
VDD/2
VDD/2
Figure D
Short circuit protection is implemented on LOUT-
(pin10) to avoid the short-circuit damage caused by
the sleeve of the phone jack connected to ground ac-
cidentally during the module assembling. When
short-circuit is detected, the linear amplifier of LOUT-
(pin 10) will turn off for a period. After this period, it
activates again. If the short circuit condition still exists,
it will be turned off again. With this protection, the
damage caused by larger dc short circuit current (from
VDD/2 to GND) can be avoided.
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
22
Global Mixed-mode Technology Inc.
G1421
Optimizing DEPOP Operation
Junction Temperature Measurement
Circuitry has been implemented in G1421 to mini-
mize the amount of popping heard at power-up and
when coming out of shutdown mode. Popping oc-
curs whenever a voltage step is applied to the
speaker and making the differential voltage gener-
ated at the two ends of the speaker. To avoid the
popping heard, the bypass capacitor should be
chosen promptly, 1/(CBx100kΩ) ≦ 1/(CI*(RI+RF)).
Where 100kΩ is the output impedance of the
mid-rail generator, CB is the mid-rail bypass ca-
pacitor, CI is the input coupling capacitor, RI is the
input impedance, RF is the gain setting impedance
which is on the feedback path. CB is the most im-
portant capacitor. Besides it is used to reduce the
popping, CB can also determine the rate at which
the amplifier starts up during startup or recovery
from shutdown mode.
Characterizing a PCB layout with respect to thermal
impedance is very difficult, as it is usually impossi-
ble to know the junction temperature of the IC.
G1421 TJ (pin 2) sources a current inversely pro-
portional to the junction temperature. Typically TJ
sources–120µA for a 5V supply at 25°C. And the
slope is approximately 0.22µA/°C. As the resistors
have a tolerance of ±20%, these values should be
calibrated on each device. When the temperature
sensing function is not used, TJ pin can be left
floating or tied to VDD to reduce the current con-
sumption.
Temperature sensing circuit is shown on Figure F.
VDD
R
De-popping circuitry of G1421 is shown on Figure E.
The PNP transistor limits the voltage drop across
the 50kΩ by slewing the internal node slowly when
power is applied. At start-up, the voltage at
BYPASS capacitor is 0. The PNP is ON to pull the
mid-point of the bias circuit down. So the capacitor
sees a lower effective voltage, and thus the charg-
ing is slower. This appears as a linear ramp (while
the PNP transistor is conducting), followed by the
expected exponential ramp of an R-C circuit.
R
5R
TJ
Figure F
VDD
100 kΩ
50 kΩ
Bypass
100 kΩ
Figure E
TEL: 886-3-5788833
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Ver: 1.6
Aug 04, 2005
23
Global Mixed-mode Technology Inc.
G1421
Package Information
D
24
L
D1
E
E1
E2
1
Note 5
A2
A1
e
b
TSSOP-24(FD) Package
NOTE:
1. Package body sizes exclude mold flash protrusions or gate burrs
2. Tolerance ±0.1mm unless otherwise specified
3. Coplanarity : 0.1mm
4. Controlling dimension is millimeter. Converted inch dimensions are not necessarily exact.
5. Die pad exposure size is according to lead frame design.
6. Follow JEDEC MO-153
DIMENSION IN MM
DIMENSION IN INCH
SYMBOLS
MIN
-----
0.00
0.80
0.19
0.20
7.7
NOM
-----
MAX
1.20
0.15
1.05
0.30
-----
MIN
-----
NOM
-----
MAX
0.047
0.006
0.041
0.012
-----
A
A1
A2
b
-----
0.000
0.031
0.007
0.008
0.303
0.173
-----
1.00
0.039
-----
-----
C
-----
-----
D
7.8
7.9
0.307
-----
0.311
0.193
D1
E
4.4
-----
4.9
6.40 BSC
4.40
0.252 BSC
0.173
-----
E1
E2
e
4.30
2.7
4.50
3.2
0.169
0.106
0.177
0.126
-----
0.65 BSC
0.60
0.026 BSC
0.024
-----
L
0.45
0º
0.75
8º
0.018
0º
0.030
8º
θ
-----
Taping Specification
PACKAGE
Q’TY/REEL
TSSOP-24 (FD)
2,500 ea
Feed Direction
Typical TSSOP Package Orientation
GMT Inc. does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and GMT Inc. reserves the right at any time without notice to change said circuitry and specifications.
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 1.6
Aug 04, 2005
24
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