FMH06N90E [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | FMH06N90E |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总5页 (文件大小：634K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
http://www.fujisemi.com
FMH06N90E
FUJI POWER MOSFET
3
N-CHANNEL SILICON POWER MOSFET
Super FAP-E series
Features
Outline Drawings [mm]
Equivalent circuit schematic
Maintains both low power loss and low noise
Lower RDS(on) characteristic
TO-3P(Q)
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.0±0.5V)
High avalanche durability
Drain(D)
Gate(G)
Applications
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
GATE
DRAIN
SOURCE
JEDEC:TO-3P
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
V
Remarks
VDS
900
900
Drain-Source Voltage
VDSX
V
VGS = -30V
Continuous Drain Current
I
I
D
±6
A
Pulsed Drain Current
DP
±24
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
I
AR
6
A
Note*1
Note*2
Note*3
Note*4
Note*5
E
E
AS
AR
323.6
11.5
2.0
mJ
mJ
kV/µs
A/µs
dV/dt
-di/dt
Peak Diode Recovery -di/dt
100
2.5
Ta=25°C
Tc=25°C
Maximum Power Dissipation
P
D
W
115
T
ch
150
°C
°C
Operating and Storage Temperature range
Tstg
-55 to + 150
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
-
max.
-
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
I
I
D
=250µA, VGS=0V
=250µA, VDS=VGS
DS=900V, VGS=0V
DS=720V, VGS=0V
GS=±30V, VDS=0V
900
V
V
VGS (th)
D
3.5
4.0
-
4.5
25
250
100
2.5
-
V
V
V
T
ch=25°C
-
-
Zero Gate Voltage Drain Current
I
DSS
µA
Tch=125°C
-
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
I
GSS
-
10
2.1
7.0
980
95
6.5
33
32
100
32
33
10
3.5
11
nA
Ω
R
DS (on)
I
I
D
=3.0A, VGS=10V
=3.0A, VDS=25V
-
g
fs
D
3.5
-
S
Ciss
Coss
Crss
td(on)
tr
1500
150
10
V
V
DS=25V
GS=0V
Output Capacitance
-
pF
ns
f=1MHz
cc=600V
GS=10V
Reverse Transfer Capacitance
-
-
50
48
150
48
50
15
V
Turn-On Time
Turn-Off Time
-
V
I
R
D
=3.0A
=39Ω
td(off)
tf
-
G
-
Total Gate Charge
Q
Q
Q
Q
G
-
Vcc=450V
Gate-Source Charge
GS
SW
GD
-
I
D
=6A
nC
VGS=10V
Drain-Source Crossover Charge
Gate-Drain Charge
-
5.5
17
See Fig.5
-
Avalanche Capability
I
AV
L=6.59mH, Tch=25°C
6
-
-
-
A
V
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
I
F
=6A, VGS=0V, Tch=25°C
0.90
1.6
9.5
1.35
-
trr
-
µS
µC
I
F
=6A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Qrr
-
-
Thermal Characteristics
Description
Symbol
min.
typ.
max.
1.087
50.0
Unit
°C/W
°C/W
Rth (ch-c)
Rth (ch-a)
Thermal resistance
Note *1 : Tch≤150°C.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *2 : Stating Tch=25°C, IAS=2.4A, L=103mH, Vcc=90V, R
G
=10Ω,
Note *4 : I
Note *5 : I
F
≤-I
≤-I
D
, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
, dv/dt=2.0kV/µs, Vcc≤BVDSS, Tch≤150°C.
E
AS limited by maximum channel temperature and avalanche current.
F
D
See to 'Avalanche current' graph.
1
FUJI POWER MOSFET
FMH06N90E
http://www.fujisemi.com
Allowable Power Dissipation
PD=f(Tc)
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse), Tc=25 °c
102
101
100
10-1
10-2
150
125
100
75
t=
1µs
10µs
100µs
1ms
50
Power loss waveform :
Square waveform
25
PD
t
0
10-1
100
101
VDS [V]
102
103
0
25
50
75
100
125
150
Tc [°C]
TypicalTransferCharacteristic
ID=f(VGS):80µs pulse test, VDS=25V, Tch=25°C
Typical Output Characteristics
ID=f(VDS):80µs pulse test, Tch=25°C
100
10
1
8
7
6
5
4
3
2
1
0
20V
10V
7.0V
6.0V
VGS=5.5V
0.1
0
1
2
3
4
5
6
7
8
9
10
0
4
8
12
16
20
24
VGS[V]
VDS [V]
Typical Transconductance
gfs=f(ID):80µs pulse test, VDS=25V, Tch=25°C
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25°C
100
10
1
4.0
6V
VGS=5.5V
3.6
3.2
2.8
2.4
2.0
1.6
7V
10V
20V
0.1
0
1
2
3
4
5
6
7
8
0.1
1
10
100
ID [A]
ID [A]
2
FUJI POWER MOSFET
FMH06N90E
http://www.fujisemi.com
Drain-Source On-state Resistance
Gate Threshold Voltage vs. Tch
RDS(on)=f(Tch):ID=3.0A, VGS=10V
VGS(th)=f(Tch):VDS=VGS, ID=250µA
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
max.
typ.
min.
max.
typ.
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=6A, Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V, f=1MHz
104
103
102
101
100
14
12
10
8
Ciss
Vcc= 120V
450V
720V
6
Coss
Crss
4
2
0
10-2
10-1
100
101
102
0
10
20
30
Qg [nC]
40
50
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test, Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V, VGS=10V, RG=39Ω
100
10
103
tf
td(off)
102
101
100
td(on)
tr
1
0.1
0.01
10-1
100
101
102
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
ID [A]
3
FUJI POWER MOSFET
FMH06N90E
http://www.fujisemi.com
Maximum Avalanche Energyvs. starting Tch
E(AV)=f(startingTch):Vcc=90V, I(AV)<=6A
350
300
250
200
150
100
50
IAS=2.4A
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
IAS=3.6A
IAS=6.0A
10- 1
10- 2
10- 3
0
10- 6
10- 5
10- 4
10- 3
10- 2
10- 1
100
0
25
50
75
100
125
150
t [sec]
starting Tch [°C]
4
FUJI POWER MOSFET
FMH06N90E
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd.
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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5
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