FMH13N60ES [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | FMH13N60ES |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总5页 (文件大小：591K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FUJI POWER MOSFET
FMH13N60ES
3S
N-CHANNEL SILICON POWER MOSFET
Super FAP-E series
Features
Outline Drawings [mm]
Equivalent circuit schematic
Maintains both low power loss and low noise
Lower RDS(on) characteristic
TO-3P(Q)
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Drain(D)
Gate(G)
Applications
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
V
Remarks
VDS
600
600
Drain-Source Voltage
VDSX
V
VGS = -30V
Continuous Drain Current
I
I
D
±13
A
Pulsed Drain Current
DP
±52
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
I
AR
13
A
Note*1
Note*2
Note*3
Note*4
E
E
AS
AR
471.5
19.5
4.7
mJ
mJ
kV/µs
A/µs
dV/dt
-di/dt
Peak Diode Recovery -di/dt
100
Note*5
2.50
195
Ta=25°C
Tc=25°C
Maximum Power Dissipation
P
D
W
T
ch
150
°C
°C
Operating and Storage Temperature range
Tstg
-55 to + 150
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
-
max.
-
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
I
I
D
=250µA, VGS=0V
=250µA, VDS=VGS
DS=600V, VGS=0V
DS=480V, VGS=0V
GS=±30V, VDS=0V
600
V
V
VGS (th)
D
3.7
-
4.2
-
4.7
25
V
V
V
T
ch=25°C
Zero Gate Voltage Drain Current
I
DSS
µA
Tch=125°C
-
-
250
100
0.58
-
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
I
GSS
-
10
0.50
10
1700
190
10
38
24
86
16
48
16
16
7
nA
Ω
R
DS (on)
I
I
D
=6.5A, VGS=10V
=6.5A, VDS=25V
-
g
fs
D
5
-
S
Ciss
Coss
Crss
td(on)
tr
2550
285
15
V
V
DS=25V
GS=0V
Output Capacitance
-
pF
ns
f=1MHz
Reverse Transfer Capacitance
-
-
57
V
V
cc=300V
GS=10V
Turn-On Time
Turn-Off Time
-
36
I
R
D
=6.5A
=18Ω
td(off)
tf
-
129
24
G
-
Total Gate Charge
Q
Q
Q
Q
G
-
72
Vcc=300V
Gate-Source Charge
GS
GD
SW
-
24
I
D
=13A
nC
Gate-Drain Charge
-
24
VGS=10V
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
10.5
-
I
AV
L=2.36mH, Tch=25°C
13
-
-
A
V
VSD
I
F
=13A, VGS=0V, Tch=25°C
0.90
0.7
8
1.08
-
trr
-
µS
µC
I
F
=13A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Qrr
-
-
Thermal Characteristics
Description
Symbol
Test Conditions
Channel to case
min.
typ.
max.
0.640
50.0
Unit
°C/W
°C/W
Rth (ch-c)
Rth (ch-a)
Thermal resistance
Channel to ambient
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=6A, L=24.0mH, Vcc=60V, RG=50Ω
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
E
AS limited by maximum channel temperature and avalanche current.
Note *4 : I
Note *5 : I
F
≤-I
≤-I
D
, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
, dv/dt=4.7kV/µs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche Energy' graph.
F
D
1
FUJI POWER MOSFET
FMH13N60ES
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
Allowable Power Dissipation
PD=f(Tc)
102
101
100
10-1
10-2
300
250
200
150
100
50
t=
1µs
10µs
100µs
1ms
Power loss waveform :
Square waveform
PD
t
0
100
101
102
103
0
25
50
75
100
125
150
°
Tc [ C]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
30
25
20
15
10
5
100
10
1
10V
8.0V
7.5V
7.0V
6.5V
VGS=6.0V
0.1
0
0
2
4
6
8
10
12
0
4
8
12
16
20
24
VDS [V]
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
100
10
1
VGS=6.0V
6.5V
7V
8V
10V
20V
0.1
0
5
10
20
25
30
15
ID [A]
0.1
1
10
100
ID [A]
2
FUJI POWER MOSFET
FMH13N60ES
Drain-Source On-state Resistance
Gate Threshold Voltage vs. Tch
RDS(on)=f(Tch):ID=6.5A,VGS=10V
VGS(th)=f(Tch):VDS=VGS,ID=250µA
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
8
7
6
5
4
3
2
1
0
max.
typ.
max.
typ.
min.
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=13A,Tch=25 °C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
14
12
10
8
104
103
102
101
100
Vcc= 120V
300V
480V
Ciss
6
Coss
Crss
4
2
0
10-2
10-1
100
VDS [V]
101
102
0
20
40
60
80
100
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=18Ω
103
102
101
100
100
10
1
td(off)
tf
td(on)
tr
0.1
10-1
100
101
102
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
ID [A]
3
FUJI POWER MOSFET
FMH13N60ES
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=13A
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
700
600
500
400
300
200
100
0
IAS=6A
IAS=8A
IAS=13A
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
0
25
50
75
100
125
150
starting Tch [°C]
4
FUJI POWER MOSFET
FMH13N60ES
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
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5
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