FMH15N60S1 [FUJI]
Power Field-Effect Transistor;
| 型号： | FMH15N60S1 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总8页 (文件大小：742K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
FMH15N60S1
Super J-MOS series
Features
N-Channel enhancement mode power MOSFET
Outline Drawings [mm]
Equivalent circuit schematic
φ3.2±0.1
15.5max
13 ±0.2
10 ±0.2
Pb-free lead terminal
RoHS compliant
TO-3P
1.5±0.2
4.5± 0.2
②Drain
Applications
For switching
+0.3
-0.1
+0.3
-0.1
1.6
1.6
+0.3
-0.1
2.2
PRE-SOLDER
①
Gate
+0.2
-0.1
0.5 +0.2
0
1.1
5.45±0.2
5.45±0.2
1.5
①
②
③
CONNECTION
③Source
1
2
3
GATE
DRAIN
SOURCE
JEDEC
:
TO-3P
DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at T =25°C (unless otherwise specified)
C
Parameter
Symbol
Characteristics
Unit
Remarks
V
V
DS
600
600
±15
±9.5
±45
±30
V
V
A
A
A
V
Drain-Source Voltage
DSX
VGS=-30V
Tc=25°C Note*1
Tc=100°C Note*1
Note *1
Continuous Drain Current
ID
Pulsed Drain Current
Gate-Source Voltage
I
DP
GS
V
Repetitive and Non-Repetitive
Maximum Avalanche Current
I
AR
3.7
A
Note *2
Note *3
Non-Repetitive
Maximum Avalanche Energy
E
AS
506.5
mJ
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
dVDS/dt
dV/dt
-di/dt
50
15
kV/μs
kV/μs
A/μs
VDS≤ 600V
Note *4
Note *5
100
2.5
T
a
=25°C
=25°C
Maximum Power Dissipation
P
D
W
115
T
C
T
T
ch
150
°C
°C
Operating and Storage Temperature range
stg
-55 to +150
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=2.3A, L=176mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDS peak≤600V, Tch≤150°C.
Note *5 : IF≤-ID, dV/dt=15kV/μs, VDS peak≤600V, Tch≤150°C.
Electrical Characteristics at T =25°C (unless otherwise specified)
C
• Static Ratings
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
I
V
D
=250μA
GS=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
600
-
3.0
-
-
V
ID
=250μA
DS=VGS
V
GS(th)
2.5
3.5
25
V
V
V
V
DS=600V
GS=0V
T
ch=25°C
-
-
-
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
I
DSS
μA
nA
V
V
DS=480V
GS=0V
Tch=125°C
-
250
100
V
V
GS= ± 30V
DS=0V
IGSS
10
I
V
D
=7.5A
GS=10V
Drain-Source On-State Resistance
Gate resistance
R
DS(on)
G
-
-
0.195
3.4
0.23
-
Ω
Ω
R
f=1MHz, open drain
8434
OCTOBER 2015
1
FUJI POWER MOSFET
FMH15N60S1
http://www.fujielectric.com/products/semiconductor/
• Dynamic Ratings
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
I
V
D
=7.5A
DS=25V
Forward Transconductance
gfs
7.3
14.7
-
S
Input Capacitance
C
C
C
iss
-
-
-
1050
34
-
-
-
V
V
DS=400V
GS=0V
Output Capacitance
oss
rss
f=250kHz
Reverse Transfer Capacitance
3.2
Effective output capacitance,
energy related (Note *6)
V
V
GS=0V
DS=0…480V
Co(er)
-
7.7
-
pF
V
V
GS=0V
DS=0…480V
Effective output capacitance,
time related (Note *7)
Co(tr)
-
256
-
ID=constant
t
t
t
t
d(on)
-
-
-
-
-
-
-
-
32
13.5
124
17.5
43
-
-
-
-
-
-
-
-
Turn-On Time
Turn-Off Time
V
DD=400V, VGS=10V
r
ID
=7.5A, R
G
=24Ω
ns
d(off)
f
See Fig.3 and Fig.4
Total Gate Charge
Q
Q
Q
Q
G
V
V
DD=480V, I
GS=10V
D
=15A
Gate-Source Charge
GS
GD
SW
11.5
13.5
7
nC
Gate-Drain Charge
See Fig.5
Drain-Source crossover Charge
Note *6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS.
Note *7 : Co(tr) is a fixed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 80% BVDSS.
• Reverse Diode
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
L=42.2mH, Tch=25°C
See Fig.1 and Fig.2
Avalanche Capability
IAV
3.7
-
-
A
I
T
F
=15A, VGS=0V
ch=25°C
Diode Forward On-Voltage
Reverse Recovery Time
V
SD
-
0.9
345
5
1.35
V
ns
μC
A
trr
-
-
-
I
F
=15A, VDD=400V
-di/dt=100A/μs
T
See Fig.6 and Fig.7
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
rr
-
-
ch=25°C
Irp
29
Thermal Resistance
Parameter
Symbol
min.
typ.
max.
Unit
Channel to Case
R
th(ch-c)
th(ch-a)
-
-
-
-
1.09
50
°C/W
°C/W
Channel to Ambient
R
2
FUJI POWER MOSFET
FMH15N60S1
http://www.fujielectric.com/products/semiconductor/
Safe Operating Area
ID=f(VDS): Duty=0(Single pulse), Tc=25°C
Allowable Power Dissipation
=f(T
PD
C)
100
10
150
t=
1µs
10µs
100
100µs
1
50
Power loss waveform :
Square waveform
0.1
0.01
1ms
PD
t
0
0
1
10
100
1000
25
50
75
C]
100
125
150
T
C
[
°
VDS [V]
Typical Output Characteristics
Typical Output Characteristics
ID
=f(VDS): 80
µ
s pulse test, Tch=25
°
C
ID
=f(VDS): 80
µ
s pulse test, Tch=150°C
50
40
30
20
10
0
30
20
10
0
20V
20V
10V
8V
7V
10V
8V
6V
6.5V
6V
5.5V
5V
5.5V
V
GS=4.5V
V
GS=5V
0
5
10
15
20
25
0
5
10
15
20
25
VDS [V]
VDS [V]
Typical Drain-Source on-state Resistance
): 80 s pulse test, Tch=25
Typical Drain-Source on-state Resistance
): 80µs pulse test, Tch=150°C
R
DS(on)=f(I
D
µ
°
C
R
DS(on)=f(I
D
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
5.5V
6V
6.5V
4.5V
5.5V
5V
5V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6V
8V
7V
8V
10V
GS=20V
V
10V
GS=20V
V
0
10
20
30
40
50
0
10
20
30
ID
[A]
ID [A]
3
FUJI POWER MOSFET
FMH15N60S1
http://www.fujielectric.com/products/semiconductor/
Drain-Source On-state Resistance
Drain-Source Breakdown Voltage
=10mA, VGS=0V
R
DS(on)=f(Tch): I =7.5A, VGS=10V
D
B
VDSS=f(Tch): I
D
700
680
660
640
620
600
580
560
540
520
500
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
This curve is not a guaranteed performance and is a reference value.
max.
typ.
-50
-25
0
25
50
C]
75
100
125
150
-50
-25
0
25
50
Tch [°C]
75
100
125
150
T
ch
[
°
Typical Transfer Characteristic
Gate Threshold Voltage vs. Tch
=250µA
I
D
=f(VGS): 80µs pulse test, VDS=25V
V
GS(th)=f(Tch): VDS=VGS, I
D
6
5
4
3
2
1
0
100
10
1
150℃
T
ch=25℃
typ.
0.1
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
Tch [°C]
Typical Transconductance
Typical Forward Characteristics of Reverse Diode
=f(VSD): 80µs pulse test
gfs=f(ID): 80µ
s pulse test, VDS=25V
IF
100
10
1
100
T
ch=25℃
10
150℃
150℃
T
ch=25℃
1
0.1
0.1
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
ID
[A]
VSD [V]
4
FUJI POWER MOSFET
FMH15N60S1
http://www.fujielectric.com/products/semiconductor/
Typical Capacitance
C=f(VDS): VGS=0V, f=250kHz
Typical Coss stored energy
100000
10000
1000
100
12
10
8
Ciss
6
Coss
Crss
4
10
2
1
0
0.1
1
10
DS [V]
100
0
100
200
300
400
500
600
V
V
DS [V]
Typical Switching Characteristics vs. ID Tch=25°C
t=f(I ): Vdd=400V, VGS=10V/0V, R =24Ω
Typical Gate Charge Characteristics
GS=f(Q ): I =15A, Tch=25
D
G
V
g
D
°C
1000
100
10
10
8
Vdd=480V
300V
td(off)
td(on)
120V
6
tr
tf
4
2
1
0
0.1
1
10
100
0
5
10
15
20
25
30
35
40
45
ID
[A]
Qg [nC]
Maximum Avalanche Energy vs. startingTch
(AV)=f(starting Tch): Vcc=60V, I(AV)<=3.7A
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
E
1
1000
900
800
700
600
500
400
300
200
100
0
10
IAS=1.2A
0
10
-1
10
IAS=2.3A
IAS=3.7A
-2
10
-3
10
-6
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
10
t [sec]
0
25
50
75
100
125
150
starting Tch [ °C]
5
FUJI POWER MOSFET
FMH15N60S1
http://www.fujielectric.com/products/semiconductor/
+10V
VGS
L
-15V
BVDSS
IAV
VDD
Rg
D.U.T.
VDS
ID
0
Fig.1 Avalanche Test circuit
Fig.2 Operating waveforms of Avalanche Test
VDS
VGS
V
DS ×90%
VDS ×90%
L
Diode
V
GS ×90%
VDD
RG
D.U.T.
V
DS ×10%
V
DS ×10%
V
GS ×10%
PG
td(on) tr
td(off)
tf
Fig.3 Switching Test circuit
Fig.4 Operating waveform of Switching Test
VGS,VDS
VDS
VGS
QG
QSW
10V
QGS
QGD
Qg
Fig.5 Operating waveform of Gate charge Test
VDS peak
VDS
IF
L
D.U.T
trr
VDD
Irp×10%
Same as
D.U.T.
RG
PG
Qrr= t0rrir・dt
Irp
∫
Fig.6 Reverse recovery Test circuit
Fig.7 Operating waveform of Reverse recovery Test
6
FUJI POWER MOSFET
FMH15N60S1
http://www.fujielectric.com/products/semiconductor/
Outview: TO-3P Package
φ3.2±0.1
15.5max
13 ±0.2
1.5± 0.2
4.5± 0.2
±0.2
10
+0.3
-0.1
+0.3
-0.1
1.6
1.6
+0.3
-0.1
2.2
PRE-SOLDER
+0.2
-0.1
0.5 +0.2
1.1
0
5.45±0.2
5.45±0.2
1.5
CONNECTION
1
2
3
GATE
DRAIN
SOURCE
JEDEC : TO-3P
DIMENSIONS ARE IN MILLIMETERS.
Marking
Country of
origin mark.
P : Philippines
Type name
Date code & Lot No.
Trademark
15N60S1
YMNNN
Y: Last digit of year
M: Month code 1~9 and O,N,D
NNN: Lot. serial number
Under bar of date code
: means lead-free mark
* The font (font type,size) and the trademark-size
might be actually different.
7
FUJI POWER MOSFET
FMH15N60S1
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2015.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment • Electrical home appliances
• Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Traffic-signal control equipment
• Emergency equipment for responding to disasters and anti-burglary devices
• Medical equipment
• Trunk communications equipment
• Gas leakage detectors with an auto-shut-off feature
• Safety devices
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
8
相关型号：
FMH16N50E
Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3P(Q), 3 PIN
FUJI
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