FMH09N90E [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET型号: | FMH09N90E |
厂家: | FUJI ELECTRIC |
描述: | N-CHANNEL SILICON POWER MOSFET |
文件: | 总5页 (文件大小:516K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FMH09N90E
FUJI POWER MOSFET
3
N-CHANNEL SILICON POWER MOSFET
Super FAP-E series
Features
Outline Drawings [mm]
Equivalent circuit schematic
Maintains both low power loss and low noise
Lower RDS(on) characteristic
TO-3P(Q)
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.0±0.5V)
High avalanche durability
Drain(D)
Gate(G)
Applications
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
V
Remarks
VDS
900
900
Drain-Source Voltage
VDSX
V
VGS = -30V
Continuous Drain Current
I
I
D
±9
A
Pulsed Drain Current
DP
±36
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
I
AR
9
A
Note*1
Note*2
Note*3
Note*4
E
E
AS
AR
565.3
20.5
2.1
mJ
mJ
kV/µs
A/µs
dV/dt
-di/dt
Peak Diode Recovery -di/dt
100
Note*5
2.5
Ta=25°C
Tc=25°C
Maximum Power Dissipation
P
D
W
205
T
ch
150
°C
°C
Operating and Storage Temperature range
Tstg
-55 to + 150
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
-
max.
-
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
I
I
D
=250µA, VGS=0V
=250µA, VDS=VGS
DS=900V, VGS=0V
DS=720V, VGS=0V
GS=±30V, VDS=0V
900
V
V
VGS (th)
D
3.5
4.0
-
4.5
25
250
100
1.4
-
V
V
V
T
ch=25°C
-
-
Zero Gate Voltage Drain Current
I
DSS
µA
Tch=125°C
-
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
I
GSS
-
10
1.16
10
1700
150
11
nA
Ω
R
DS (on)
I
I
D
=4.5A, VGS=10V
=4.5A, VDS=25V
-
g
fs
D
5.0
-
S
Ciss
Coss
Crss
td(on)
tr
2550
225
17
V
V
DS=25V
GS=0V
Output Capacitance
-
pF
ns
f=1MHz
Reverse Transfer Capacitance
-
-
35
30
110
30
50
15
16
6
53
45
165
45
75
23
24
9
V
V
cc=600V
GS=10V
Turn-On Time
Turn-Off Time
-
I
R
D
=4.5A
=24Ω
td(off)
tf
-
G
-
Total Gate Charge
Q
Q
Q
Q
G
-
Vcc=450V
Gate-Source Charge
GS
GD
SW
-
I
D
=9A
nC
Gate-Drain Charge
-
VGS=10V
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
I
AV
L=5.12mH, Tch=25°C
9
-
-
-
A
V
VSD
I
F
=9A, VGS=0V, Tch=25°C
0.90
1.8
15
1.35
-
trr
-
µS
µC
I
F
=9A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Qrr
-
-
Thermal Characteristics
Description
Symbol
Test Conditions
Channel to case
min.
typ.
max.
0.610
50.0
Unit
°C/W
°C/W
Rth (ch-c)
Rth (ch-a)
Thermal resistance
Channel to ambient
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=3.6A, L=80.0mH, Vcc=90V, RG=10Ω
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
E
AS limited by maximum channel temperature and avalanche current.
Note *4 : I
Note *5 : I
F
≤-I
≤-I
D
, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
, dv/dt=2.1kV/µs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche current' graph.
F
D
1
FUJI POWER MOSFET
FMH09N90E
Allowable Power Dissipation
PD=f(Tc)
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25°C
102
101
100
10-1
10-2
100
240
200
160
120
80
t=
1μs
10μs
100μs
1ms
Power loss waveform :
Square waveform
40
PD
t
0
0
25
50
75
100
125
150
10-1
100
101
VDS [V]
102
103
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25°C
Typical Transfer Characteristic
ID=f(VGS):80μs pulse test,VDS=25V,Tch=25 C
°
15
10
5
10V
7.0V
6.5V
10
6.0V
1
VGS=5.5V
0.1
0
0
1
2
3
4
5
6
7
8
9
10
0
4
8
12
VDS [V]
16
20
24
VGS[V]
Typical Transconductance
gfs=f(ID):80μs pulse test,VDS=25V,Tch=25 C
Typical Drain-Source on-state Resistance
°
°
RDS(on)=f(ID):80 μs pulse test,Tch=25 C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
100
VGS=5.5V
6V
6.5V
7V
10V
10
20V
1
0.1
0
4
8
12
0.1
1
10
100
ID [A]
ID [A]
2
FUJI POWER MOSFET
FMH09N90E
Drain-Source On-state Resistance
Gate Threshold Voltage vs. Tch
RDS(on)=f(Tch):ID=4.5A,VGS=10V
VGS(th)=f(Tch):VDS=VGS,ID=250μA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
max.
typ.
min.
max.
typ.
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=9A,Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
103
102
101
100
14
12
10
8
Vcc= 120V
450V
Ciss
720V
6
Coss
Crss
4
2
0
0
20
40
60
80
100
10-2
10-1
100
VDS [V]
101
102
Qg [nC]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=24Ω
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 μs pulse test,Tch=25°C
100
10
103
102
101
100
tf
td(off)
td(on)
tr
1
0.1
0.01
10-1
100
101
102
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
ID [A]
3
FUJI POWER MOSFET
FMH09N90E
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=90V,I(AV)<=9A
101
600
500
400
300
200
100
0
IAS=3.6A
100
IAS=5.4A
IAS=9.0A
-1
10
-2
10
-3
10
-6
-5
10
-4
10
-3
-2
10
-1
10
10
10
100
t [sec]
0
25
50
75
100
125
150
starting Tch [°C]
4
FUJI POWER MOSFET
FMH09N90E
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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5
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