ESJA09 [FUJI]
HIGH VOLTAGE DIODE; 高压二极管
| 型号： | ESJA09 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | HIGH VOLTAGE DIODE |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESJA09
(10kV,12kV/5mA)
Outline Drawings
HIGH VOLTAGE DIODE
ESJA09 is high reliability resin molded type high voltage
diode in small size package which is sealed (a multilayed
mesa type silicon chip) by epoxy resin.
Cathode Mark
Lot No.
o 2.5
o 0.5
27 min.
10
27 min.
Features
Ultra high speed switching
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
Cathode Mark
Type
Mark
Applications
Rectification for CRT display monitor high voltage
ESJA09-10
ESJA09-12
power supply (FBT:Flyback Transformer)
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbols
Items
ESJA09
Condition
Units
-10
-12
VRRM
Repetitive Peak Reverse Voltage
Average Output Current
10
12
kV
mA
A
IO
5
Ta=25°C,Resistive Load
IFSM
Tj
Surge Current
0.5
10mS Sine-half wave
peak value
Junction Temperature
120
100
°C
°C
°C
Tc
Allowable Operation Case Temperature
-40 to +120
Storage Temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
ESJA09
Items
Symbols
Conditions
Units
-10
-12
42
Maximum Forward Voltage Drop
Maximum Reverse Current
VF
IR
trr
IF=10mA
V
2
VR=VRRM
µA
µs
Maximum Reverse Recovery Time
Junction Capacitance
Ta=25°C,IF=2mA,IR=4mA
0.05
Cj
Ta=25°C,VR=0V,f=1MHz
1
pF
ESJA09 (10kV,12kV/5mA)
Characteristics
30
Tj=100 o C
ESJA09-10
ESJA09-12
0.1
ESJA09-10
20
IR
ESJA09-12
IF
[µ A]
[mA]
0.01
10
Tj= 25 o C
Tj=100 o C
ESJA09-10
ESJA09-12
Tj= 25 o C
1E-3
0
0
20
40
V F [V]
60
80
200
0.10
0
4
8
12
16
V R [kV]
Forward Characteristics
Reverse Characteristics
100
1.0
Tj= 25
o C
IR =100 µ A
Tj=25 o C
f=1MHz
N=100pcs.
80
0.8
0.6
0.4
0.2
0.0
60
40
20
Cj
N
ESJA09-12
[pcs.]
[pF]
ESJA09-10
ESJA09-12
ESJA09-10
0
8
12
16
20
24
28
0
40
80
120
160
V
[kV]
AV
V Bias [V]
Avalanche Breakdown Voltage
Junction Capacitance Characteristics
0.01µF
D.U.T
ESJA09-10
Tj= 25 o C
100
N=100pcs.
150
1kohm
kohm
100ohm
50
N
[pcs.]
0
OSCILLO SCOPE
ESJA09-12
100
IF=2mA
1mA
50
0
IR=4mA
0
0.00
0.02
0.04
0.06
0.08
trr ( µ s)
trr
Reverse Recovery Time
相关型号：
ESJA18-08
Rectifier Diode, 1 Element, 0.005A, 8000V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-2
FUJI
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