ESJA09-10 [FUJI]
HIGH VOLTAGE DIODE; 高压二极管
| 型号： | ESJA09-10 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | HIGH VOLTAGE DIODE |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESJA09-10
(10kV/5mA)
Outline Drawings
HIGH VOLTAGE DIODE
ESJA09 is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Cathode Mark
o 2.5
Lot No.
o 0.5
10
27 min.
27 min.
Features
High speed switching
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
Cathode Mark
Type
Mark
Applications
Rectification for CRT display monitor high voltage
57
ESJA09-10
power supply (FBT:Flyback Transformer)
Maximum Ratings and Characteristics
White
Absolute Maximum Ratings
Symbols
VRRM
IO
ESJA09-10
10
Items
Condition
Units
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
kV
mA
Apeak
°C
5
Ta=25°C,Resistive Load
10mS Sine-half wave
peak value
IFSM
Tj
0.5
120
Junction Temperature
Tc
100
Allowable Operation Case Temperature
Storage Temperature
°C
Tstg
-40 to +120
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
ESJA09-10
Items
Symbols
Conditions
Units
V
35
2
Maximum Forward Voltage Drop
Maximum Reverse Current
VF
IR1
IR2
trr
at 25°C,IF=10mA
at 25°C,VR=10kV
at 100°C,VR=10kV
at 25°C,IF=2mA,IR=4mA
µA
5
µA
µs
Maximum Reverse Recovery Time
Junction Capacitance
0.05
Cj
at 25°C,VR=0V,f=1MHz
1
pF
ESJA09-10 (10kV/5mA)
Characteristics
Reverse characteristic (VR-IR)
Forward characteristic (VF-IF)
Typical
Typical
10
Ta=25°C
30
25
20
15
10
5
Toil=100°C
1
0.1
0.01
2
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
45
50
VR (kV)
VF (V)
Reverse recovery time characteristic (Ta-trr)
Avalanche characteristic (Vz-Iz)
Typical
Typical
130
IF/IR=2/4mA
75%Recovery
Ta=25°C
120
110
100
90
100
10
1
80
70
60
50
40
30
50
60
70
80
90
100
110
120
130
10
11
12
13
14
15
16
17
18
19
20
Ta (°C)
Vz (kV)
相关型号：
ESJA18-08
Rectifier Diode, 1 Element, 0.005A, 8000V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-2
FUJI
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