ESJA18-08 [FUJI]

Rectifier Diode, 1 Element, 0.005A, 8000V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-2;
ESJA18-08
型号: ESJA18-08
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

Rectifier Diode, 1 Element, 0.005A, 8000V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-2

二极管
文件: 总2页 (文件大小:18K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ESJA18  
(8kV/5mA)  
Outline Drawings  
HIGH VOLTAGE DIODE  
ESJA18 is high reliability resin molded type high voltage  
diode in small size package which is sealed a multilayed  
mesa type silicon chip by epoxy resin.  
CathodeMark  
o 2.5  
Lot No.  
o 0.5  
27 min.  
6.5  
27 min.  
Features  
Ultra high speed switching  
Low VF  
High surge resisitivity for CRT discharge  
High reliability design  
Ultra small pakage  
Cathode Mark  
Type  
Mark  
Applications  
Rectification for CRT display monitor high voltage  
ESJA18-08  
power supply (FBT:Flyback Transformer)  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings  
Symbols  
VRRM  
IO  
Items  
Ratings  
Condition  
Units  
kV  
Repetitive Peak Renerse Voltage  
Average Output Current  
Suege Current  
8
5
mA  
A
IFSM  
Tj  
0.5  
120  
Ta=25°C,Resistive Load  
10mS Sine-half wave  
peak value  
Junction Temperature  
°C  
Tc  
Allowable Operation Case Temperature  
Storage Temperature  
100  
°C  
-40 to +120  
Tstg  
°C  
Electrical Characteristics (Ta=25°C Unless otherwise specified )  
Retings  
Items  
Symbols  
Conditions  
IF=10mA  
Units  
V
28  
2
Maximum Forward Voltage Drop  
Maximum Reverse Current  
VF  
IR  
VR=VRRM  
µA  
µs  
Maximum Reverse Recovery Time  
Junction Capacitance  
trr  
Cj  
Ta=25°C,IF=2mA,IR=4mA  
Ta=25°C,VR=0V,f=1MHz  
0.045  
2
pF  
ESJA18 (8kV/5mA)  
Characteristics  
28  
24  
20  
1
Tj=100 o C  
0.1  
IR  
Tj=100 o C  
Tj= 25 o C  
IF  
[µ A]  
[mA]  
16  
12  
0.01  
Tj= 25 o C  
1E-3  
8
0
10  
20  
30  
40  
0
2
4
6
8
10  
12  
V F [V]  
V R [kV]  
Forward Characteristics  
Reverse Characteristics  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
100  
80  
60  
40  
20  
Tj= 25 o C  
IR =100 µ A  
Tj=25 o C  
f=1MHz  
N=100pcs.  
N
Cj  
[pcs.]  
[pF]  
0
0
50  
100  
V Bias [V]  
Junction Capacitance Characteristics  
150  
200  
0
4
8
12  
AV  
16  
[kV]  
20  
24  
28  
V
Avalanche Breakdown Voltage  
120  
100  
80  
Tj= 25 o C  
N=100pcs.  
0.01µF  
D.U.T  
150  
1kohm  
kohm  
100ohm  
N
[pcs.]  
60  
OSCILLO SCOPE  
40  
20  
IF=2mA  
1mA  
0
0
0.00  
0.02  
0.04  
trr ( µ s)  
0.06  
0.08  
0.10  
IR=4mA  
Reverse Recovery Time  
trr  

相关型号:

ESJA18-20

Rectifier Diode, 1 Element, 0.0015A, 20000V V(RRM),
FUJI

ESJA19

HIGH VOLTAGE DIODE
FUJI

ESJA19-10

Rectifier Diode, 1 Element, 0.005A, 10000V V(RRM), Silicon, ULTRA SMALL PACKAGE-2
FUJI

ESJA23-03A

5.0mA 3.0kV 80nS Fast Recovery High Voltage Silicon Rectifier Diode
SAMTEC

ESJA23-04

HIGH VOLTAGE SILICON DIODE
FUJI

ESJA23-04A

5.0mA 4.0kV 80nS Fast Recovery High Voltage Silicon Rectifier Diode
SAMTEC

ESJA23-05A

5.0mA 5.0kV 80nS Fast Recovery High Voltage Silicon Rectifier Diode
SAMTEC

ESJA28

HIGH VOLTAGE DIODE
FUJI

ESJA28-02S

Rectifier Diode, 1 Element, 0.01A, 2200V V(RRM), Silicon
FUJI

ESJA28-03

HIGH VOLTAGE AUTOMOTIVE DIODE
ETC

ESJA37-24

Rectifier Diode, 1 Element, 0.005A, 24000V V(RRM),
FUJI

ESJA52-10

Rectifier Diode, 1 Element, 0.005A, 10000V V(RRM), Silicon
FUJI