ESJA28-02S [FUJI]
Rectifier Diode, 1 Element, 0.01A, 2200V V(RRM), Silicon;
| 型号： | ESJA28-02S |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Rectifier Diode, 1 Element, 0.01A, 2200V V(RRM), Silicon 二极管 |
| 文件： | 总2页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESJA28
(2.2kV, 2.7kV/10mA)
Outline Drawings
HIGH VOLTAGE DIODE
ESJA19 is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Cathode Mark
o 2.5
Lot No.
o 0.5
27 min.
6.5
27 min.
Features
High reliability design.
Ultra small pakage.
High temperature resistivity
Cathode Mark
Type
Mark
Applications
Distributor-less Ignition system of Coil Distributed
ESJA28-02S
ESJA28-03
ESJA28
Type for Automobile
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbols
Items
Condition
Units
-02S
2.2
-03
2.7
3.0
f=60Hz
VRRM
VRSM
IO
Repetitive Peak Renerse Voltage
Non-Repetitive Peak Reverse Voltage
Average Output Current
kV
kV
mA
A
Ignition Pulse
2.5
f=150Hz,1minute
60 Hz Sine wave
10
1.0
60 Hz Sine-half wave
peak value
IFSM
Tj
Suege Current
150
Operating Junction Temperature
Storage Temperature
°C
°C
Tstg
-40 to +150
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
ESJA28
Units
-02S
7
-03
8.4
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Current
VF
IF=10mA
V
IR1
IR2
VR=2.2kV
VR=2.5kV
5
µA
µA
10
Minimum Avalanche Breakdown Voltage
Vz
Iz=100µA
2.7
kV
ESJA28(2.2kV,2.7kv/5mA)
Characteristics
100
ESJA28-03
Tj=150°C
1
ESJA28-02S
80
60
ESJA28-03
Tj=100°C
0.1
I R
I
F
ESJA28-02S
[mA]
[ A]
µ
40
Tj=100°C
0.01
1E-3
Tj= 25°C
ESJA28-03
ESJA28-02S
20
Tj= 25°C
ESJA28-03
ESJA28-02S
0
0
1
2
3
4
0
2
4
6
8
10
V
[V]
V R [kV]
F
Forward Characteristics
Reverse Characteristics
2.0
1.6
1.2
0.8
0.4
0.0
Tj=25°C
f=1MHz
100
I
R
Cj
[pF]
[µ A]
10
Tj= 25°C
Tj=100°C
ESJA28-02S
ESJA28-02S
ESJA28-03
ESJA28-03
1
2
4
6
8
10
0
40
80
120
[V]
160
200
V
[kV]
AV
V Bias
Avalanche Breakdown Voltage
Junction Capacitance Characteristics
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