ESJA19 [FUJI]
HIGH VOLTAGE DIODE; 高压二极管
| 型号： | ESJA19 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | HIGH VOLTAGE DIODE |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESJA19
(10kV,12kv/5mA)
Outline Drawings
HIGH VOLTAGE DIODE
ESJA19 is high reliability resin molded type high voltage
diode in small size package which is sealed (a multilayed
mesa type silicon chip) by epoxy resin.
Cathode Mark
Lot No.
o 2.5
o 0.5
Features
Ultra high speed switching
27 min.
10
27 min.
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
Cathode Mark
Type
Mark
Applications
Rectification for CRT display monitor high voltage
ESJA19-10
ESJA19-12
power supply (FBT: Flyback Transformer)
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbols
Items
ESJA19
Condition
Units
-10
-12
VRRM
Repetitive Peak Reverse Voltage
Average Output Current
Surge Current
10
12
kV
mA
A
IO
5
Ta=25°C,Resistive Load
IFSM
Tj
0.5
10mS Sine-half wave
peak value
Junction Temperature
120
100
°C
°C
°C
Tc
Allowable Operation Case Temperature
Storage Temperature
Tstg
-40 to +120
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
ESJA19
Symbols
Conditions
Units
-10
-12
Maximum Forward Voltage Drop
Maximum Reverse Current
36
42
VF
IF=10mA
V
2
IR
trr
VR=VRRM
µA
µs
Maximum Reverse Recovery Time
Ta=25°C,IF=2mA,IR=4mA
0.045
1
Junction Capacitance
Cj
Ta=25°C,VR=0V,f=1MHz
pF
ESJA19(10kV,12kv/5mA)
Characteristics
ESJA19-10
30
Tj=100°C
ESJA19-12
0.1
20
I R
[µA]
I
Tj= 25°C
Tj=100°C
F
[mA]
0.01
10
ESJA19-10
ESJA19-12
ESJA19-10
Tj= 25°C
ESJA19-12
1E-3
0
0
4
8
12
16
0
20
40
60
80
V R [kV]
Reverse Characteristics
V
[V]
F
Forward Characteristics
100
80
60
40
20
0
1.0
0.8
0.6
0.4
0.2
0.0
Tj= 25°C
Tj=25°C
f=1MHz
IR=100 µA
N=100pcs.
Cj
N
[pF]
ESJA19-12
[pcs.]
ESJA19-10
ESJA19-10
ESJA19-12
8
12
16
20
24
28
0
40
80
V
120
160
200
V
[kV]
[V]
AV
Bias
Avalanche Breakdown Voltage
Junction Capacitance Characteristics
0.01µF
D.U.T
ESJA19-10
Tj= 25°C
100
N=100pcs.
150
1kohm
kohm
100ohm
50
OSCILLO SCOPE
0
N
ESJA19-12
100
[pcs.]
IF=2mA
0
1mA
50
IR=4mA
0
0.00
0.02
0.04
0.06
0.08
0.10
trr
(
µ s)
trr
Reverse Recovery Time
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