7MBR35VW120-50 [FUJI]
IGBT MODULE; IGBT模块
| 型号： | 7MBR35VW120-50 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT MODULE |
| 文件： | 总8页 (文件大小：819K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
7MBR35VW120-50
IGBT MODULE (V series)
1200V / 35A / PIM
IGBT Modules
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Maximum
ratings
Items
Symbols
Conditions
Units
Collector-Emitter voltage
V
CES
GES
1200
±20
35
V
V
Gate-Emitter voltage
Collector current
V
Ic
Continuous
1ms
Tc=80°C
Tc=80°C
Icp
70
A
-Ic
35
-Ic pulse
Pc
1ms
70
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
1 device
210
1200
±20
25
W
V
VCES
VGES
V
I
I
C
Continuous
1ms
Tc=80°C
Tc=80°C
Collector current
A
CP
50
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
P
C
1 device
170
1200
1600
35
W
V
VRRM
VRRM
V
I
I
O
50Hz/60Hz, sine wave
A
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
FSM
260
338
175
150
150
150
125
-40 to +125
A
A2s
10ms, Tj=150°C
half sine wave
I2t
Inverter, Brake
Converter
Junction temperature
Tj
Inverter, Brake
Converter
Operating junciton temperature
(under switching conditions)
Tjop
°C
Case temperature
Tc
Storage temperature
Tstg
between terminal and copper base (*1)
between thermistor and others (*2)
Isolation voltage
Screw torque
V
iso
AC : 1min.
M5
2500
3.5
VAC
N m
Mounting (*3)
-
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
7MBR35VW120-50
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
-
max.
Zero gate voltage collector current
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1200V
-
-
1.0
mA
nA
V
Gate-Emitter leakage current
Gate-Emitter threshold voltage
GE = 0V, VGE = ±20V
-
200
VGE (th)
CE = 20V, I
C
= 35mA
6.0
-
6.5
7.0
Tj=25°C
2.15
2.50
2.55
1.85
2.20
2.25
2.9
2.60
VCE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
Tj=25°C
-
-
(terminal)
I
C
= 35A
-
-
Collector-Emitter saturation voltage
V
-
2.30
VCE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
-
-
(chip)
I
C
= 35A
-
-
-
Input capacitance
Turn-on time
Cies
ton
tr
VCE = 10V, VGE = 0V, f = 1MHz
-
nF
µs
-
0.39
0.09
0.03
0.53
0.06
2.00
2.15
2.10
1.70
1.85
1.80
-
1.20
0.60
-
VCC = 600V
-
I
C
= 35A
tr (i)
toff
tf
-
VGE = +15 / -15V
-
1.00
0.30
2.45
-
RG = 27Ω
Turn-off time
-
Tj=25°C
-
VF
I
F
= 35A
Tj=125°C
Tj=150°C
Tj=25°C
-
(terminal)
-
-
Forward on voltage
V
-
2.15
-
VF
(chip)
I
I
F
F
= 35A
= 35A
Tj=125°C
Tj=150°C
-
-
-
Reverse recovery time
trr
-
0.1
µs
V
GE = 0V
Zero gate voltage collector current
I
I
CES
GES
-
-
-
-
1.0
mA
VCE = 1200V
VCE = 0V
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
200
nA
V
VGE = +20 / -20V
Tj=25°C
-
2.05
2.40
2.45
1.85
2.20
2.25
0.39
0.09
0.53
0.06
-
2.50
-
V
CE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
Tj=25°C
-
(terminal)
I
C
= 25A
-
-
-
2.30
-
V
(chip)
CE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
-
I
C
= 25A
-
-
ton
tr
-
1.20
0.60
1.00
0.30
1.00
2.10
-
VCE = 600V
-
I
C
= 25A
µs
VGE = +15 / -15V
toff
tf
-
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
R
G
= 39Ω
-
IRRM
VR
= 1200V
-
mA
V
terminal
chip
-
1.65
1.35
-
V
(chip)
FM
I
F
= 35A
= 1600V
-
-
IRRM
VR
1.0
-
mA
Ω
T = 25°C
-
5000
495
3375
R
B
T = 100°C
T = 25 / 50°C
465
3305
520
3450
B value
K
Thermal resistance characteristics
Characteristics
Items
Symbols Conditions
Units
min.
typ.
max.
Inverter IGBT
-
-
-
-
-
-
0.72
0.91
0.89
0.88
-
Inverter FWD
Rth(j-c)
-
Thermal resistance (1device)
Brake IGBT
-
-
°C/W
Converter Diode
Contact thermal resistance (1device) (*4)
Rth(c-f)
with Thermal Compound
0.05
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
7MBR35VW120-50
IGBT Modules
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
70
60
50
40
30
20
10
0
70
VGE=20V
15V
VGE=20V
15V
12V
60
50
40
30
20
10
0
12V
10V
10V
8V
8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
Collector-Emitter voltage: VCE[V]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
70
8
6
4
Tj=25°C
Tj=150°C
60
50
40
30
20
10
0
Tj=125°C
Ic=70A
Ic=35A
Ic=18A
2
0
0
1
2
3
4
5
5
10
15
20
25
Collector current: IC [A]
Gate - Emitter voltage: VGE [V]
[ Inverter ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
Dynamic gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25°C
10.0
Cies
VGE
1.0
0.1
0.0
Cres
Coes
VCE
100
0
10
20
30
0
200
300
400
Collector - Emitter voltage: VCE [V]
Gate charge: Qg [nC]
3
7MBR35VW120-50
IGBT Modules
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=27Ω, Tj= 125°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=27Ω, Tj= 150°C
10000
10000
1000
100
10
1000
100
10
toff
ton
toff
ton
tr
tr
tf
tf
0
20
40
60
80
0
20
40
60
80
Collector current: IC [A]
Collector current: IC [A]
[ Inverter ]
[ Inverter ] a
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=35A, VGE=±15V, Tj= 125°C
10000
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=27Ω
10
8
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
1000
100
10
6
toff
ton
4
tr
tf
Err(150°C)
Err(125°C)
2
0
10
100
0
25
50
75
100
Collector current: IC [A]
[ Inverter ]
Gate resistance : Rg [Ω]
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=35A, VGE=±15V
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 27Ω ,Tj <= 125°C
7
6
5
4
3
2
1
0
100
90
80
70
60
Eon(150°C)
Eon(125°C)
Eoff(150°C)
50
Eoff(125°C)
RBSOA
(Repetitive pulse)
40
30
20
10
0
Err(150°C)
Err(125°C)
0
400
800
1200
10
100
Collector-Emitter voltage : VCE [V]
Gate resistance : Rg [Ω]
4
7MBR35VW120-50
IGBT Modules
[ Inverter ]
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=27Ω
1000
70
60
50
40
30
20
10
0
Tj=25°C
trr(150°C)
trr(125°C)
100
10
1
Irr(150°C)
Irr(125°C)
Tj=150°C
Tj=125°C
0
1
2
3
4
5
0
25
50
75
100
Forward on voltage : VF [V]
Forward current : IF [A]
[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
70
60
50
40
30
20
10
0
Tj=25°C
Tj=125°
0
1
2
3
4
Forward on voltage : VFM [V]
[ Thermistor ]
Temperature characteristic (typ.)
Transient thermal resistance (max.)
10.00
1.00
0.10
0.01
100
10
1
FWD[Inverter]
IGBT[Brake]
Conv. Diode
IGBT[Inverter]
0.1
0.001
0.010
0.100
1.000
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
Pulse width : Pw [sec]
Temperature [°C ]
5
7MBR35VW120-50
IGBT Modules
[ Brake ]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
50
50
VGE=20V
V=20V
15V
15V
12V
40
30
20
10
0
40
30
20
10
0
12V
10V
10V
8V
8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
Collector-Emitter voltage: VCE[V]
[ Brake ]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
o
Tj= 25 C / chip
50
8
6
4
Tj=25°C
Tj=150°C
40
30
20
10
0
Tj=125°C
Ic=50A
Ic=25A
Ic=13A
2
0
0
1
2
3
4
5
5
10
15
20
25
Collector-Emitter voltage: VCE[V]
Gate - Emitter voltage: VGE [V]
[ Brake ]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
Dynamic gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25°C
10.0
1.0
0.1
0.0
Cies
VGE
Cres
Coes
VCE
0
10
20
30
0
100
200
300
Collector - Emitter voltage: VCE [V]
Gate charge: Qg [nC]
6
7MBR35VW120-50
IGBT Modules
Outline Drawings, mm
shows theoretical dimension.
) shows reference dimension.
(
Section A-A
Equivalent Circuit Schematic
7
7MBR35VW120-50
IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• Machine tools
• OA equipment
• Audiovisual equipment
• Communications equipment (terminal devices)
• Electrical home appliances • Personal equipment
• Measurement equipment
• Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Traffic-signal control equipment
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• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Medical equipment
• Safety devices
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment
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7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
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Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
8
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