7MBR50SB-120 [FUJI]
Power Integrated Module (PIM); 功率集成模块（ PIM ）
| 型号： | 7MBR50SB-120 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Power Integrated Module (PIM) |
| 文件： | 总6页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT PIM
1200V
7MBR 50SB-120
6x50A+Chopper
Power Integrated Module (PIM)
I Features
I Outline Drawing
• NPT-Technology
• Solderable Package
• Square SC SOA at 10 x IC
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
Switching Loss
• Low Losses And Soft Switching
I Equivalent Circuit
I Absolute Maximum Ratings ( Tc=25°C)
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Symbols
Test Conditions
Ratings
1200
20
Units
V
VCES
VGES
IC
Continuous 25°C / 80°C
75 / 50
150 / 100
50
Collector Current
IC PULSE
-IC PULSE
PC
1ms
25°C / 80°C
A
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Average Output Current
1 device
360
W
V
VRRM
IO
1600
50
50Hz/60Hz sinus wave
Tj=150°C, 10 ms,
sinus wave
A
A2s
V
Surge Current
(Non Repetitive)
(Non Repetitive)
IFSM
520
I2t
1352
1200
20
Collector-Emitter Voltage
Gate –Emitter Voltage
VCES
VGES
IC
Continuous 25°C / 80°C
35 / 25
70 / 50
180
Collector Current
A
IC PULSE
1ms
25°C / 80°C
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Operating Junction Temperature
Storage Temperature
PC
1 device
W
V
VRRM
Tj
1200
+150
-40 ∼ +125
2500
3.5
°C
TStg
VISO
Isolation Voltage
A.C. 1min.
V
Mounting Screw Torque*
Nm
Note: *:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
IGBT PIM
1200V
7MBR 50SB-120
6x50A+Chopper
I Electrical Characteristics( Tj=25°C )
Units
Items
Symbols
ICES
Test Conditions
Min. Typ. Max.
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
VGE=0V VCE=1200V
1.0
mA
nA
IGES
200
8.5
VCE=0V VGE= 20V
VGE=20V IC=50mA
VGE(th)
5.5
7.2
2.1
VGE=15V
IC = 50A
Chip
Terminal
V
Collector-Emitter Saturation Voltage
Input Capacitance
VCE(sat)
2.3
Cies
ton
tr,x
tr,i
toff
tf
f=1MHz, VGE=0V, VCE=10V
VCC = 600V
6000
0.35
0.25
0.10
0.45
0.08
pF
1.2
0.6
Turn-on Time
IC = 50A
VGE = 15V
µs
1.0
0.3
RG = 24Ω
Turn-off Time
Inductive Load
Chip
IF=50A
2.3
2.5
Diode Forward On-Voltage
Reverse Recovery Time
Forward Voltage
VF
trr
V
ns
V
Terminal
3.3
IF=50A
350
Chip
1.1
1.2
VFM
IF=50A
Terminal
1.5
1.0
1.0
200
Reverse Current
IRRM
VR =1600V
mA
mA
nA
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Collector-Emitter Saturation Voltage
ICES
VGE=0V VCE=1200V
VCE=0V VGE= 20V
IGES
VCE(sat)
VGE=15V
Chip
2.10
2.25
0.35
0.25
0.45
0.08
V
IC=50A
Terminal
2.7
1.2
0.6
1.0
0.3
1.0
ton
tr,x
toff
tf
VCC = 600V
IC = 15A
VGE = 15V
RG = 51Ω
VR=1200V
T= 25°C
Turn-on Time
µs
Turn-off Time
Reverse Current
Resistance
B Value
IRRM
mA
Ω
5000
495
R
B
T=100°C
465
520
T=25 / 50°C
3305 3375 3450
K
I Thermal Characteristics
Units
Items
Symbols
Rth(j-c)
Test Conditions
Min. Typ. Max.
Inverter IGBT
0.35
0.75
Inverter FRD
Thermal Resistance (1 device)
Contact Thermal Resistance
Brake IGBT
0.69 °C/W
0.50
Rectifier Diode
With Thermal Compound
Rth(c-f)
0.05
IGBT PIM
1200V
7MBR 50SB-120
6x50A+Chopper
IGBT PIM
1200V
7MBR 50SB-120
6x50A+Chopper
IGBT PIM
1200V
7MBR 50SB-120
6x50A+Chopper
IGBT PIM
1200V
7MBR 50SB-120
6x50A+Chopper
Specification is subject to change without notice
December 1998b
相关型号：
7MBR50SB120-50
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-24
FUJI
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