7MBR50SA-060 [FUJI]

Power Integrated Module (PIM); 功率集成模块（ PIM ）

7MBR50SA-060


型号：	7MBR50SA-060
厂家：	FUJI ELECTRIC
描述：	Power Integrated Module (PIM) 功率集成模块（ PIM ）
文件：	总6页 (文件大小：340K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IGBT PIM

600V

6x50A+Chopper

7MBR 50SA-060

Power Integrated Module (PIM)

n Features

• PT-Technology

n Outline Drawing

• Solderable Package

• High Short Circuit Withstand-Capability

• Small Temperature Dependence of the Turn-Off

Switching Loss

• Low Losses And Soft Switching

n Equivalent Circuit

n Absolute Maximum Ratings ( T_c=25°C)

Items

Collector-Emitter Voltage

Gate -Emitter Voltage

Symbols

Test Conditions

Ratings

600

Units

V_CES

V_GES

I_C

I_{C PULSE}

-I_{C PULSE}

P_C

V_RRM

I_O

I_FSM

V

± 20

50

100

50

200

800

50

350

613

600

± 20

30

60

120

Continuous

1ms

Collector Current

A

Collector Power Dissipation

Repetitive Peak Reverse Voltage

Average Output Current

1 device

W

V

50Hz/60Hz sinus wave

T_j=150°C, 10 ms,

sinus wave

A

A²s

V

Surge Current

(Non Repetitive)

(Non Repetitive)

I²t

Collector-Emitter Voltage

Gate –Emitter Voltage

V_CES

V_GES

I_C

I_{C PULSE}

P_C

V_RRM

T_j

T_Stg

V_ISO

Continuous

1ms

1 device

Collector Current

A

Collector Power Dissipation

Repetitive Peak Reverse Voltage

Operating Junction Temperature

Storage Temperature

Isolation Voltage

Mounting Screw Torque*

W

V

600

+150

-40 ~ +125

2500

3.5

°C

A.C. 1min.

V

Nm

Note: *:Recommendable Value; 2.5 ~ 3.5 Nm (M5)

IGBT PIM

600V

6x50A+Chopper

7MBR 50SA-060

n Electrical Characteristics( T_j=25°C )

Units

mA

nA

Items

Symbols

I_CES

I_GES

Test Conditions

V_GE=0V V_CE=600V

V_CE=0V V_GE=± 20V

Min. Typ. Max.

Zero Gate Voltage Collector Current

Gate-Emitter Leackage Current

Gate-Emitter Threshold Voltage

1.0

200

V_GE(th)

V_GE=20V I_C=50mA

5.5

7.8

1.8

8.5

V_GE=15V

I_C= 50A

Chip

Terminal

V

Collector-Emitter Saturation Voltage

Input Capacitance

V_CE(sat)

1.95

5000

0.45

0.25

0.08

0.40

0.05

2.40

C_ies

t_on

t_r,x

t_r,i

t_off

t_f

f=1MHz, V_GE=0V, V_CE=10V

V_CC= 300V

I_C= 50A

V_GE= ±15V

R_G= 51W

pF

1.2

0.6

Turn-on Time

µs

1.0

0.35

Turn-off Time

Inductive Load

Chip

I_F=50A

1.75

1.9

Diode Forward On-Voltage

Reverse Recovery Time

Forward Voltage

V_F

t_rr

V

ns

V

Terminal

2.6

300

I_F=50A

Chip

Terminal

1.1

1.2

V_FM

I_F=50A

1.5

1.0

1.0

200

Reverse Current

I_RRM

I_CES

I_GES

V_CE(sat)

V_R=800V

V_GE=0V V_CE=600V

V_CE=0V V_GE=± 20V

mA

mA

nA

Zero Gate Voltage Collector Current

Gate-Emitter Leackage Current

Collector-Emitter Saturation Voltage

V_GE=15V

Chip

1.80

1.95

0.45

0.25

0.40

0.05

I_C=30A

Terminal

2.4

1.2

0.6

1.0

0.35

1.0

t_on

t_r,x

t_off

t_f

V_CC= 300V

I_C= 30A

V_GE= ±15V

R_G= 82W

V_R=600V

T= 25°C

T=100°C

T=25 / 50°C

Turn-on Time

Turn-off Time

Reverse Current

Resistance

B Value

I_RRM

mA

W

K

5000

495

R

B

465

520

3305 3375 3450

n Thermal Characteristics

Units

Items

Symbols

R_th(j-c)

Test Conditions

Inverter IGBT

Inverter FRD

Brake IGBT

Rectifier Diode

With Thermal Compound

Min. Typ. Max.

0.63

1.33

Thermal Resistance (1 device)

1.04 °C/W

2.42

Contact Thermal Resistance

R_th(c-f)

0.05

IGBT PIM

600V

7MBR 50SA-060

6x50A+Chopper

IGBT PIM

600V

7MBR 50SA-060

6x50A+Chopper

IGBT PIM

600V

7MBR 50SA-060

6x50A+Chopper

IGBT PIM

600V

7MBR 50SA-060

6x50A+Chopper

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